SUZUKI TOSHI-KAZU Professor
Materials Science, Nanomaterials and Devices, Center for Nano Materials and Technology
◆Degrees
PhD The University of Tokyo
MS The University of Tokyo
BS The University of Tokyo
◆Professional Experience
: Sony Corporation
◆Specialties
Electric/electronic material engineering, Electronic devices and equipment
◆Research Keywords
半導体デバイス, 化合物半導体
◆Research Interests
Compound semiconductor crystal growth
Crystal growth and defect reduction of highly lattice-mismatched III-V compound semiconductors (InSb, InGaSb/InAlSb, InGaAs/InAlAs on GaAs etc.) by means of molecular beam epitaxy.
Heterogeneous integration technology for narrow-gap semiconductors
Developement of bonding and integration technology for narrow-gap semiconductors on arbitrary host substrates by using lattice-mismatched epitaxial lift-off.
Compound semiconductor devices, high-speed devices
Fabrication and characterization of III-V compound semiconductor devices (InGaSb/InAlSb, InGaAs/InAlAs, GaN/AlGaN), Investigation of influences of crystalline defects on compound semiconductor device performances, Investigation of high-speed performances of ultra-small compound semiconductor devices.

■Publications

◆Published Papers
AlGaN/GaN devices with metal-semiconductor or insulator-semiconductor interfacial layers: Vacuum level step due to dipole and interface fixed charge
Yuchen Deng, Jieensi Gelan, Kazuya Uryu, Toshi-kazu Suzuki
Journal of Applied Physics, 135, 8, -, 2024
Electron mobility enhancement in n-GaN under Ohmic-metal
Kazuya Uryu, Yuchen Deng, Son Phuong Le, Toshi-kazu Suzuki
AIP ADVANCES, 13, 7, -, 2023
Mechanism of low-temperature-annealed Ohmic contacts to AlGaN/GaN heterostructures: A study via formation and removal of Ta-based Ohmic-metals
Kazuya Uryu, Shota Kiuchi, Taku Sato, Toshi-kazu Suzuki
Applied Physics Letters, 120, 5, -, 2022
Electrical characterization of AlGaN/GaN heterostructures under Ohmic metals by using multi-probe Hall devices
Kazuya Uryu, Shota Kiuchi, Toshi-kazu Suzuki
Applied Physics Letters, 119, 2, -, 2021
◆Books
「2013 化合物半導体技術大全」 第2編 第1章 「化合物半導体基板と結晶成長技術」
共著, 電子ジャーナル出版, 2013
◆Conference Activities & Talks
Characterization and analysis of GaN-based MIS-HFETs ――A method using capacitance-frequency-temperature mapping (Invited)
The 40th International Symposium on Compound Semiconductors (ISCS2013), Kobe, 2013
異種材料融合集積に向けた狭ギャップ化合物半導体技術
電気学会調査専門委員会, 法政大学(東京都小金井市), 2008
Narrow-gap III-V semiconductor technology: lattice-mismatched growth and epitaxial lift-off for heterogeneous integration (Invited)
2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), Sapporo, 2008

■Teaching Experience

Fabrication of Nano-Devices with Training Course, Solid State Physics and its Application to Electronics II(E), エレクトロニクス特論, ナノデバイス加工論(実習付), 固体電子物性・デバイス特論Ⅱ(E)

■Contributions to  Society

◆Academic Society Affiliations
電気学会, 電子情報通信学会, 応用物理学会
◆Academic Contribution
The 49th Int. Conf. on Solid State Devices and Materials , Program Committee, Chair of Area 6 - 2017 , Sendai
The 48th Int. Conf. on Solid State Devices and Materials , Program Committee, Chair of Area 6 - 2016 , Tsukuba
The 47th Int. Conf. on Solid State Devices and Materials , Program Committee, Vice Chair of Area 6 - 2015 , Sapporo
◆Committee Memberships
・ 応用物理学会 , APEX/JJAP編集委員
・ 電子情報通信学会 , 電子デバイス研究専門委員会
・ 電気学会 , 次世代化合物半導体デバイスの機能と応用調査専門委員会 委員長 2019

■Academic  Awards

・ IOP Outstanding Reviewer Award 2021 , IOP (Institute of Physics) Publishing , 2022
・ APEX/JJAP Editorial Contribution Award , The Japan Society of Applied Physics , 2018
・ エレクトロニクスソサイエティ活動功労表彰 , 電子情報通信学会 , 2018