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SUZUKI TOSHI-KAZU Professor
Materials Science, Nanomaterials and Devices, Center for Nano Materials and Technology

Published Papers

27 items
AlGaN/GaN devices with metal-semiconductor or insulator-semiconductor interfacial layers: Vacuum level step due to dipole and interface fixed charge
Yuchen Deng, Jieensi Gelan, Kazuya Uryu, Toshi-kazu Suzuki
Journal of Applied Physics, 135, 8, -, 2024
Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor field-effect transistors with non-gate-recessed or partially-gate-recessed structures
Duong Dai Nguyen, Yuchen Deng, Toshi-kazu Suzuki
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 38, 9, -, 2023
Electron mobility enhancement in n-GaN under Ohmic-metal
Kazuya Uryu, Yuchen Deng, Son Phuong Le, Toshi-kazu Suzuki
AIP ADVANCES, 13, 7, -, 2023
Mechanism of low-temperature-annealed Ohmic contacts to AlGaN/GaN heterostructures: A study via formation and removal of Ta-based Ohmic-metals
Kazuya Uryu, Shota Kiuchi, Taku Sato, Toshi-kazu Suzuki
Applied Physics Letters, 120, 5, -, 2022
Electrical characterization of AlGaN/GaN heterostructures under Ohmic metals by using multi-probe Hall devices
Kazuya Uryu, Shota Kiuchi, Toshi-kazu Suzuki
Applied Physics Letters, 119, 2, -, 2021
Normally-off operations in partially-gate-recessed AlTiO/AlGaN/GaN field-effect transistors based on interface charge engineering
Duong Dai Nguyen, Takehiro Isoda, Yuchen Deng, Toshi-kazu Suzuki
Journal of Applied Physics, 130, 1, -, 2021
Electron mobility anisotropy in InAs/GaAs(001) heterostructures
Son Phuong Le, Toshi-kazu Suzuki
Applied Physics Letters, 118, 18, -, 2021
Degradation of fluorescent organic light emitting diodes caused by quenching of singlet and triplet excitons
Duy Cong Le, Duong Dai Nguyen, Savanna Lloyd, Toshi-kazu Suzuki, Hideyuki Murata
JOURNAL OF MATERIALS CHEMISTRY C, 8, 42, 14873-14879, 2020
Interface charge engineering in AlTiO/AlGaN/GaN metal-insulator-semiconductor devices
Duong Dai Nguyen, Toshi-kazu Suzuki
JOURNAL OF APPLIED PHYSICS, 127, 9, -, 2020
Suppression of drain-induced barrier lowering by double-recess overlapped gate structure in normally-off AlGaN-GaN MOSFETs
Taku Sato, Kazuya Uryu, Junichi Okayasu, Masayuki Kimishima, Toshi-kazu Suzuki
APPLIED PHYSICS LETTERS, 113, 6, -, 2018
Insulator-semiconductor interface fixed charges in AlGaN/GaN metal-insulator-semiconductor devices with Al2O3 or AlTiO gate dielectrics
Son Phuong Le, Duong Dai Nguyen, Toshi-kazu Suzuki
JOURNAL OF APPLIED PHYSICS, 123, 3, -, 2018
An InAs/high-k/low-k structure: Electron transport and interface analysis
Toshimasa Ui, Ryousuke Mori, Son Phuong Le, Yoshifumi Oshima, Toshi-kazu Suzuki
AIP Advances, 7, 5, 055303-055303, 2017
Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors
Son Phuong Le, Toshimasa Ui, Tuan Quy Nguyen, Hong-An Shih, Toshi-kazu Suzuki
JOURNAL OF APPLIED PHYSICS, 119, 20, -, 2016
Low-frequency noise in InAs films bonded on low-k flexible substrates
Son Phuong Le, Toshimasa Ui, Toshi-kazu Suzuki
APPLIED PHYSICS LETTERS, 107, 19, -, 2015
Low-frequency noise in AlN/AlGaN/GaN metal-insulator-semiconductor devices: A comparison with Schottky devices
Son Phuong Le, Tuan Quy Nguyen, Hong-An Shih, Masahiro Kudo, Toshi-kazu Suzuki
JOURNAL OF APPLIED PHYSICS, 116, 5, -, 2014
GHz response of metamorphic InAlAs metal-semiconductor-metal photodetector on GaAs substrate
Kazuaki Maekita, Takeo Maruyama, Koichi Iiyama, Toshi-kazu Suzuki
JAPANESE JOURNAL OF APPLIED PHYSICS, 53, 2, -, 2014
Gate-control efficiency and interface state density evaluated from capacitance-frequency-temperature mapping for GaN-based metal-insulator-semiconductor devices
Hong An Shih, Masahiro Kudo, Toshi-kazu Suzuki
Journal of Applied Physics, 116, 18, -, 2014
Fabrication and characterization of BN/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors with sputtering-deposited BN gate dielectric
Tuan Quy Nguyen, Hong An Shih, Masahiro Kudo, Toshi-kazu Suzuki
Physica Status Solidi (C) Current Topics in Solid State Physics, 10, 11, 1401-1404, 2013
AlGaN-GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors With Very High-k Oxynitride TaOxNy Gate Dielectric
Taku Sato, Junich Okayasu, Masahiko Takikawa, Toshi-kazu Suzuki
IEEE ELECTRON DEVICE LETTERS, 34, 3, 375-377, 2013
Current conduction mechanisms and breakdown fields of AlxTiyO/n-GaAs(001) metal-insulator-semiconductor structures
Toshimasa Ui, Masahiro Kudo, Toshi-kazu Suzuki
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 11, 10, 11, 1417-1420, 2013
Analysis of AlN/AlGaN/GaN metal-insulator-semiconductor structure by using capacitance-frequency-temperature mapping
Hong An Shih, Masahiro Kudo, Toshi-kazu Suzuki
Applied Physics Letters, 101, 4, -, 2012
Electron distribution and scattering in InAs films on low-k flexible substrates
Cong Thanh Nguyen, Hong An Shih, Masashi Akabori, Toshi-kazu Suzuki
Applied Physics Letters, 100, 23, -, 2012
Fabrication and Analysis of AlN/GaAs(001) and AlN/Ge/GaAs(001) Metal-Insulator-Semiconductor Structures
Masahiro Kudo, Hong-An Shih, Masashi Akabori, Toshi-kazu Suzuki
JAPANESE JOURNAL OF APPLIED PHYSICS, 51, 2, -, 2012
Application of Sputtering-Deposited AlN Films to Gate Dielectric for AlGaN/GaN Metal-Insulator-Semiconductor Heterojunction Field-Effect Transistor
Hong-An Shih, Masahiro Kudo, Masashi Akabori, Toshi-kazu Suzuki
JAPANESE JOURNAL OF APPLIED PHYSICS, 51, 2, -, 2012
Carrier recombination lifetime in InAs thin films bonded on low-k flexible substrates
Toshi-kazu Suzuki, Hayato Takita, Cong Thanh Nguyen, Koichi Iiyama
AIP Advances, 2, 4, -, 2012
Transparent Oxide Thin-Film Transistors Using n-(In2O3)(0.9)(SnO2)(0.1)/InGaZnO4 Modulation-Doped Heterostructures
Satoshi Taniguchi, Mikihiro Yokozeki, Masao Ikeda, Toshi-kazu Suzuki
JAPANESE JOURNAL OF APPLIED PHYSICS, 50, 4, -, 2011
Electron transport properties of InAs ultrathin films obtained by epitaxial lift-off and van der Waals bonding on flexible substrates
Hayato Takita, Norihiko Hashimoto, Cong Thanh Nguyen, Masahiro Kudo, Masashi Akabori, Toshi-kazu Suzuki
Applied Physics Letters, 97, 1, -, 2010