Ph.D. from The University of Tokyo 東京大学
2018 - : Japan Advanced Institute of Science and Technology , 先端科学技術研究科マテリアルサイエンス系 , 教授
2016 - 2018 : Japan Advanced Institute of Science and Technology , 先端科学技術研究科マテリアルサイエンス系 , 准教授
2012 - 2016 : Japan Advanced Institute of Science and Technology , グリーンデバイス研究センター , 准教授
2009 - 2013 : Japan Science and Technology Agency , さきがけ研究 , 兼任研究者
2006 - 2011 : Japan Advanced Institute of Science and Technology , マテリアルサイエンス研究科 , 助教
2005 - 2006 : Japan Advanced Institute of Science and Technology , 材料科学研究科 , 助教
2004 - 2005 : Tohoku University , Institute for Materials Research , 博士研究員
2000 - 2004 : The University of Tokyo , The Graduate School of Engineering Department of Applied Physics , Doctoral course
1998 - 2000 : The University of Tokyo , The Graduate School of Engineering Department of Applied Physics , Master's Course
Material fabrication and microstructure control, Crystal engineering, Applied materials
Catalytic chemical vapor deposition, 太陽電池, 結晶化, 簿膜, 多結晶シリコン, フラッシュランプアニール, スパッタリング, 熱処理, 高温加圧加工, 半導体結晶, X線用レンズ
Formation of high-quality poly-Si films by flash lamp annealing and their application to high-efficiency solar cells
We investigate on formation of high-quality poly-Si on glass substrates by flash lamp annealing, with millisecond duration, of Cat-CVD a-Si films and fabrication of solar cells using the poly-Si films.
Application of Cat-CVD to the fabrication process of c-Si solar cells
Cat-CVD (catalytic chemical vapor deposition), in which gas molecules are decomposed on heated catalyzing wire by catarytic reaction, can deposit high-quality passivation films to reduce the recombination of photo-generated carriers on crystalline Si surface. We develop high-quality Cat-CVD passivation films for crystalline Si solar cells. We also investigate a novel doping method using a Cat-CVD system.
Potential-induced degradation for n-type crystalline silicon photovoltaic modules
The performance degradation of photovoltaic modules originating from a large voltage between an Al frame and cells (potential-induced degradation: PID) has been a significant problem in large-scale PV power plants. We investigate the mechanism of PID and its suppression particularly for n-type c-Si PV modules, which have higher performances than p-type ones and are thus expected to be widely utilized in the future.
Mathematics for Condensed Matter Science and Technology, Advanced Device Physics(E), Solid State Physics and its Application to Electronics II(E), 応用物性数学特論, 先端デバイス特論(E), 固体電子物性・デバイス特論Ⅱ(E)
International Conference on Hot-Wire Chemical Vapor Deposition (Cat-CVD) Process, 薄膜材料デバイス研究会, Active-Matrix Flatpanel Displays and Devices (AM-FPD), International Conference on Solid State Devices and Materials (SSDM), Cat-CVD研究会, IEEE, The Japan Society of Applied Physics
・ PVSEC-27 Best Paper Award , PVSEC-27 Technical Program Committee , 2017
・ 第22回（2007年春季）応用物理学会講演奨励賞 , The Japan Society of Applied Physics , 2007