Ph.D. from The University of Tokyo The University of Tokyo
2018 - : Japan Advanced Institute of Science and Technology , 先端科学技術研究科マテリアルサイエンス系 , 教授
2016 - 2018 : Japan Advanced Institute of Science and Technology , 先端科学技術研究科マテリアルサイエンス系 , 准教授
2012 - 2016 : Japan Advanced Institute of Science and Technology , グリーンデバイス研究センター , 准教授
2009 - 2013 : Japan Science and Technology Agency , さきがけ研究 , 兼任研究者
2006 - 2011 : Japan Advanced Institute of Science and Technology , マテリアルサイエンス研究科 , 助教
2005 - 2006 : Japan Advanced Institute of Science and Technology , 材料科学研究科 , 助教
2004 - 2005 : Tohoku University , Institute for Materials Research , 博士研究員
2000 - 2004 : The University of Tokyo , The Graduate School of Engineering Department of Applied Physics , Doctoral course
1998 - 2000 : The University of Tokyo , The Graduate School of Engineering Department of Applied Physics , Master's Course
Material fabrication and microstructure control, Crystal engineering, Applied materials
Catalytic chemical vapor deposition, 太陽電池, 結晶化, 簿膜, 多結晶シリコン, フラッシュランプアニール, スパッタリング, 熱処理, 高温加圧加工, 半導体結晶, X線用レンズ
Formation of high-quality poly-Si films by flash lamp annealing and their application to high-efficiency solar cells
We investigate on formation of high-quality poly-Si on glass substrates by flash lamp annealing, with millisecond duration, of Cat-CVD a-Si films and fabrication of solar cells using the poly-Si films.
Application of Cat-CVD to the fabrication process of c-Si solar cells
Cat-CVD (catalytic chemical vapor deposition), in which gas molecules are decomposed on heated catalyzing wire by catarytic reaction, can deposit high-quality passivation films to reduce the recombination of photo-generated carriers on crystalline Si surface. We develop high-quality Cat-CVD passivation films for crystalline Si solar cells. We also investigate a novel doping method using a Cat-CVD system.
Potential-induced degradation for n-type crystalline silicon photovoltaic modules
The performance degradation of photovoltaic modules originating from a large voltage between an Al frame and cells (potential-induced degradation: PID) has been a significant problem in large-scale PV power plants. We investigate the mechanism of PID and its suppression particularly for n-type c-Si PV modules, which have higher performances than p-type ones and are thus expected to be widely utilized in the future.
International Conference on Hot-Wire Chemical Vapor Deposition (Cat-CVD) Process, 薄膜材料デバイス研究会, Active-Matrix Flatpanel Displays and Devices (AM-FPD), International Conference on Solid State Devices and Materials (SSDM), Cat-CVD研究会, IEEE, The Japan Society of Applied Physics
・ PVSEC-27 Best Paper Award , PVSEC-27 Technical Program Committee , 2017
・ 第22回（2007年春季）応用物理学会講演奨励賞 , The Japan Society of Applied Physics , 2007