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前田 健作 (MAEDA, Kensaku)講師
マテリアルサイエンス, サスティナブルイノベーション研究領域

発表論文

73件
In situ observation and numerical analysis of temperature gradient effects on growth velocity during directional solidification of silicon
Peiyao Hao, Lu-Chung Chuang, Kensaku Maeda, Jun Nozawa, Haruhiko Morito, Kozo Fujiwara, Lili Zheng
Journal of Materials Science, 59, 39, 18446-18460, 2024
Dislocation interaction with vicinally faceted groove at grain boundary in multi-crystalline silicon
Fan Yang, Lu-Chung Chuang, Kensaku Maeda, Jun Nozawa, Haruhiko Morito, Kozo Fujiwara, Thierry Duffar
Journal of Crystal Growth, 639, 127722-127722, 2024
Vicinal (111) surfaces at Si solid-liquid interface during unidirectional solidification
Shashank Shekhar Mishra, Lu Chung Chuang, Jun Nozawa, Kensaku Maeda, Haruhiko Morito, Kozo Fujiwara, Thierry Duffar
Scripta Materialia, 247, -, 2024
Misorientation increase of small-angle grain boundaries during directional solidification of silicon
Lu-Chung Chuang, Kensaku Maeda, Jun Nozawa, Haruhiko Morito, Kozo Fujiwara
Journal of Crystal Growth, 127822-127822, 2024
In situ study of growth kinetics of {1 0 0} and {1 1 0} crystal/melt interfaces during unidirectional solidification of silicon
Shashank Shekhar Mishra, Lu Chung Chuang, Kensaku Maeda, Jun Nozawa, Haruhiko Morito, Thierry Duffar, Kozo Fujiwara
Journal of Crystal Growth, 627, -, 2024
Visualizing crystal twin boundaries of bismuth by high-spatial-resolution ARPES
Ayumi Moriya, Kosuke Nakayama, Tappei Kawakami, Kensaku Maeda, Atsuya Tokuyama, Seigo Souma, Chaoyu Chen, José Avila, Maria Carmen Asensio, Miho Kitamura, Koji Horiba, Hiroshi Kumigashira, Takashi Takahashi, Kozo Fujiwara, Kouji Segawa, Takafumi Sato
Physical Review Research, 5, 2, -, 2023
Epitaxial growth of SiGe films by annealing Al–Ge alloyed pastes on Si substrate
Keisuke Fukuda, Satoru Miyamoto, Masahiro Nakahara, Shota Suzuki, Marwan Dhamrin, Kensaku Maeda, Kozo Fujiwara, Yukiharu Uraoka, Noritaka Usami
Scientific Reports, 12, 1, -, 2022
Difference in growth rates at {1 1 0} and {1 1 1} crystal/melt interfaces of silicon
Shashank Shekhar Mishra, Lu-Chung Chuang, Kensaku Maeda, Jun Nozawa, Haruhiko Morito, Kozo Fujiwara
Journal of Crystal Growth, 593, 126784-126784, 2022
Facet formation during the solidification of pure antimony
Keiji Shiga, Kensaku Maeda, Haruhiko Morito, Kozo Fujiwara
Journal of Crystal Growth, 586, 126633-126633, 2022
In situ observation of solidification and subsequent evolution of Ni-Si eutectics
Lu Chung Chuang, Kensaku Maeda, Haruhiko Morito, Kozo Fujiwara
Scripta Materialia, 211, -, 2022
Dynamics at crystal/melt interface during solidification of multicrystalline silicon
Kozo Fujiwara, Lu-Chung Chuang, Kensaku Maeda
HIGH TEMPERATURE MATERIALS AND PROCESSES, 41, 1, 31-47, 2022
Twin boundary formation at a grain-boundary groove during the directional solidification of InSb
Keiji Shiga, Atsuko Takahashi, Lu-Chung Chuang, Kensaku Maeda, Haruhiko Morito, Kozo Fujiwara
JOURNAL OF CRYSTAL GROWTH, 577, -, 2022
Dendritic Growth in Si1-xGex Melts
Genki Takakura, Mukannan Arivanandhan, Kensaku Maeda, Lu-Chung Chuang, Keiji Shiga, Haruhiko Morito, Kozo Fujiwara
CRYSTALS, 11, 7, -, 2021
融液成長におけるマクロな成長界面形状変化の直接観察
前田健作
日本結晶成長学会誌, 47, 4-4, 1-5, 2021
In situ observation of multiple parallel (111) twin boundary formation from step-like grain boundary during Si solidification
Kuan-Kan Hu, Kensaku Maeda, Keiji Shiga, Haruhiko Morito, Kozo Fujiwara
APPLIED PHYSICS EXPRESS, 13, 10, -, 2020
Enhancing the thermoelectric power factor of nanostructured ZnCo2O4by Bi substitution
A. S. Alagar Nedunchezhian, D. Sidharth, R. Rajkumar, N. Yalini Devi, K. Maeda, M. Arivanandhan, K. Fujiwara, G. Anbalagan, R. Jayavel
RSC Advances, 10, 32, 18769-18775, 2020
Phase relation between supercooled liquid and amorphous silicon
Junpei T. Okada, Patrick H. -L. Sit, Ryo Ishikawa, Takehiko Ishikawa, Jinfan Chen, Koji S. Nakayama, Kensaku Maeda, Yoshihiko Yokoyama, Yuki Watanabe, Paul-Francois Paradis, Yasuhiro Watanabe, Susumu Nanao, Yuichi Ikuhara, Kaoru Kimura, Satoshi Uda
APPLIED PHYSICS LETTERS, 116, 9, -, 2020
Effect of twin boundary formation on the growth rate of the GaSb{111} plane
Keiji Shiga, Kensaku Maeda, Haruhiko Morito, Kozo Fujiwara
ACTA MATERIALIA, 185, 453-460, 2020
Influence of interfacial structure on propagating direction of small-angle grain boundaries during directional solidification of multicrystalline silicon
Lu-Chung Chuang, Takanori Kiguchi, Yumiko Kodama, Kensaku Maeda, Keiji Shiga, Haruhiko Morito, Kozo Fujiwara
SCRIPTA MATERIALIA, 172, 105-109, 2019
Effect of misorientation angle of grain boundary on the interaction with Sigma 3 boundary at crystal/melt interface of multicrystalline silicon
Lu-Chung Chuang, Kensaku Maeda, Haruhiko Morito, Keiji Shiga, Wolfram Miller, Kozo Fujiwara
MATERIALIA, 7, -, 2019
The effect of grain boundaries on instability at the crystal/melt interface during the unidirectional growth of Si
Kuan-Kan Hu, Kensaku Maeda, Keiji Shiga, Haruhiko Morito, Kozo Fujiwara
MATERIALIA, 7, -, 2019
Crystallization and re-melting of Si1-xGex alloy semiconductor during rapid cooling
Mukannan Arivanandhan, Genki Takakura, D. Sidharth, Maeda Kensaku, Keiji Shiga, Haruhiko Morito, Kozo Fujiwara
JOURNAL OF ALLOYS AND COMPOUNDS, 798, 493-499, 2019
The in situ observation of faceted dendrite growth during the directional solidification of GaSb
Keiji Shiga, Masato Kawano, Kensaku Maeda, Haruhiko Morito, Kozo Fujiwara
SCRIPTA MATERIALIA, 168, 56-60, 2019
A {112}Sigma 3 grain boundary generated from the decomposition of a Sigma 9 grain boundary in multicrystalline silicon during directional solidification
Lu-Chung Chuang, Kensaku Maeda, Keiji Shiga, Haruhiko Morito, Kozo Fujiwara
SCRIPTA MATERIALIA, 167, 46-50, 2019
Origin of small-angle grain boundaries during directional solidification in multicrystalline silicon
Lu-Chung Chuang, Kensaku Maeda, Haruhiko Morito, Keiji Shiga, Kozo Fujiwara
MATERIALIA, 3, 347-352, 2018
Application of weighted Voronoi diagrams to analyze nucleation sites of multicrystalline silicon ingots
Tetsuro Muramatsu, Yusuke Hayama, Kentaro Kutsukake, Kensaku Maeda, Tetsuya Matsumoto, Hiroaki Kudo, Kozo Fujiwara, Noritaka Usami
JOURNAL OF CRYSTAL GROWTH, 499, 62-66, 2018
Instability of crystal/melt interface in Si-rich SiGe
M. Mokhtari, K. Fujiwara, G. Takakura, K. Maeda, H. Koizumi, J. Nozawa, S. Uda
Journal of Applied Physics, 124, 8, -, 2018
In-situ observation of instability of a crystal-melt interface during the directional growth of pure antimony
Keiji Shiga, Leo Billaut, Kensaku Maeda, Haruhiko Morito, Kozo Fujiwara
AIP ADVANCES, 8, 7, -, 2018
In situ observation of grain-boundary development from a facet-facet groove during solidification of silicon
Kuan-Kan Hu, Kensaku Maeda, Haruhiko Morito, Keiji Shiga, Kozo Fujiwara
ACTA MATERIALIA, 153, 186-192, 2018
In situ observation of interaction between grain boundaries during directional solidification of Si
Lu-Chung Chuang, Kensaku Maeda, Haruhiko Morito, Keiji Shiga, Wolfram Miller, Kozo Fujiwara
SCRIPTA MATERIALIA, 148, 37-41, 2018
In situ observation of grain boundary groove at the crystal/melt interface in Cu
Kensaku Maeda, Akira Niitsu, Haruhiko Morito, Keiji Shiga, Kozo Fujiwara
Scripta Materialia, 146, 169-172, 2018
In-situ studies of multicrystalline silicon nucleation and growth on α- and β-Si3N4 coated substrates
Espen Undheim, Kensaku Maeda, Lars Arnberg, Randi Holmestad, Kozo Fujiwara, Marisa Di Sabatino
Journal of Crystal Growth, 482, 75-84, 2018
Liquid phase growth of GaSe1−xTex mixed crystals by temperature difference method under controlled vapor pressure
S. Zhao, Y. Sato, K. Maeda, T. Tanabe, H. Ohtani, Y. Oyama
Journal of Crystal Growth, 467, 107-110, 2017
Electrical property and structural analysis of amphoteric impurity Ge doped GaSe crystal grown by liquid phase growth
Y. Sato, S. Zhao, K. Maeda, T. Tanabe, Y. Oyama
Journal of Crystal Growth, 467, 1, 34-37, 2017
In situ observation of twin boundary formation at grain-boundary groove during directional solidification of Si
Kozo Fujiwara, Ryoichi Maeda, Kensaku Maeda, Haruhiko Morito
SCRIPTA MATERIALIA, 133, 65-69, 2017
Transition metal doping of GaSe implemented with low temperature liquid phase growth
Nuo Lei, Youhei Sato, Tadao Tanabe, Kensaku Maeda, Yutaka Oyama
JOURNAL OF CRYSTAL GROWTH, 460, 94-97, 2017
テラヘルツ光源による紙幣の変造・損傷の非接触検査
田邉匡生, 木村隆, 前田健作, 五井広一, 小山裕
電子情報通信学会技術研究報告, 116, 375, 47-48, 2016
高効率THz波発生のための両性不純物Ge添加GaSe結晶の液相成長
佐藤陽平, 趙枢, 田邉匡生, 前田建作, 小山裕
電子情報通信学会技術研究報告, 116, 375, 29-33, 2016
Liquid immiscibility in a CTGS (Ca3TaGa3Si2O14) melt
Jun Nozawa, Hengyu Zhao, Chihiro Koyama, Kensaku Maeda, Kozo Fujiwara, Haruhiko Koizumi, Satoshi Uda
JOURNAL OF CRYSTAL GROWTH, 454, 82-86, 2016
Nondestructive and remote diagnosis on coated metal surface by THz imaging
Takashi Kimura, Seiya Takahashi, Kensaku Maeda, Yutaka Oyama
2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015, 3, -, 2016
Stoichiometry controlled liquid phase growth of GaSe crystals for the efficient THz generation
Yohei Sato, Kohei Suzuki, Kensaku Maeda, Yutaka Oyama
2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015, 3, -, 2016
The solid-solution region for the langasite-type Ca3TaGa3Si2O14 crystal as determined by a lever rule
Hengyu Zhao, Satoshi Uda, Kensaku Maeda, Jun Nozawa, Haruhiko Koizumi, Kozo Fujiwara
JOURNAL OF CRYSTAL GROWTH, 415, 111-117, 2015
Terahertz photoluminescence from SI-GaAs by below gap excitation via EL2 level
Yutaka Oyama, Hikari Dezaki, Yusaku Shimizu, Kensaku Maeda
APPLIED PHYSICS LETTERS, 106, 2, 022109-, 2015
Investigation of defect structure of impurity-doped lithium niobate by combining thermodynamic constraints with lattice constant variations
Chihiro Koyama, Jun Nozawa, Kensaku Maeda, Kozo Fujiwara, Satoshi Uda
JOURNAL OF APPLIED PHYSICS, 117, 1, 014102-, 2015
高抵抗化による高効率THz波発生を目指した不純物添加GaSe結晶の液相成長
鈴木康平, 佐藤陽平, 前田健作, 小山裕
電子情報通信学会信学技報, 115, 387, 41-46, 2015
テラヘルツ分光イメージングによる非破壊・非接触検査技術の応用
木村隆, 中里祐輔, 前田健作, 小山裕
電子情報通信学会信学技報, 115, 387, 93-97, 2015
Partitioning of ionic species during growth of impurity-doped lithium niobate by electric current injection
Jun Nozawa, Shintaro Iida, Chihiro Koyama, Kensaku Maeda, Kozo Fujiwara, Haruhiko Koizumi, Satoshi Uda
JOURNAL OF CRYSTAL GROWTH, 406, 78-84, 2014
Comparative Study of Shallow Acceptor Levels in Unintentionally Doped p-Type GaSe Crystals Prepared by the Bridgman and Liquid Phase Solution Growth Methods
Yuki Nagai, Kensaku Maeda, Kohei Suzuki, Yutaka Oyama
JOURNAL OF ELECTRONIC MATERIALS, 43, 9, 3117-3120, 2014
Terahertz Wave Generation via Nonlinear Parametric Process from ε-GaSe Single Crystals Grown by Liquid Phase Solution Method
Kyosuke Saito, Yuki Nagai, Kunihiko Yamamoto, Kensaku Maeda, Tadao Tanabe, Yutaka Oyama
Optics and Photonics Journal, 4, 213-218, 2014
Crystal growth and equilibrium crystal shapes of silicon in the melt
Xinbo Yang, K. Fujiwara, K. Maeda, J. Nozawa, H. Koizumi, S. Uda
Progress in Photovoltaics: Research and Applications, 22, 5, 574-580, 2014
蒸気圧制御温度差液相成長法によるGaSe結晶の電気特性と差周波THz波発生特性
鈴木康平, 長井悠輝, 前田健作, 小山裕
電子情報通信学会信学技報, 114, 56, 59-63, 2014
蒸気圧制御温度差液相成長法によるTHz発生用GaSe結晶の成長とその評価
鈴木康平, 長井悠輝, 山本邦彦, 佐藤陽平, 前田健作, 齊藤恭介, 小山裕
電子情報通信学会信学技報, 114, 387, 97-102, 2014
テラヘルツ波反射イメージングによる銅板表面亀裂の定量的検出
高橋星也, 田邉匡生, 前田健作, 浜野知行, 中嶋かおり, 小山裕
電子情報通信学会信学技報, 114, 387, 39-43, 2014
ゲルマニウム結晶のアニール処理によるテラヘルツ波光源の出力向上
中里祐輔, バーラセカランスンダララジャン, 前田健作, 小山裕
電子情報通信学会信学技報, 114, 387, 103-106, 2014
Non-destructive corrosion diagnosis of painted hot-dip galvanizing steel sheets by using THz spectral imaging
Yuta Nakamura, Hidetaka Kariya, Akihiro Sato, Tadao Tanabe, Katsuhiro Nishihara, Akira Taniyama, Kaori Nakajima, Kensaku Maeda, Yutaka Oyama
Zairyo to Kankyo/ Corrosion Engineering, 63, 9, 504-509, 2014
テラヘルツ分光イメージングによる塗膜下溶融Znめっき鋼板の腐食状態非破壊検査
中村悠太, 假屋英孝, 佐藤明宏, 田邉匡生, 西原克浩, 谷山明, 中嶋かおり, 前田健作, 小山裕
材料と環境, 63, 504-509, 2014
Growth of congruent-melting lithium tantalate crystal with stoichiometric structure by MgO doping
Shunsuke Fujii, Satoshi Uda, Kensaku Maeda, Jun Nozawa, Haruhiko Koizumi, Kozo Fujiwara, Tomio Kajigaya
JOURNAL OF CRYSTAL GROWTH, 383, 63-66, 2013
The effect of grain boundary characteristics on the morphology of the crystal/melt interface of multicrystalline silicon
Kozo Fujiwara, Masaya Ishii, Kensaku Maeda, Haruhiko Koizumi, Jun Nozawa, Satoshi Uda
SCRIPTA MATERIALIA, 69, 3, 266-269, 2013
Fabrication of Quasi-Phase-Matching Structure during Paraelectric Borate Crystal Growth
Kensaku Maeda, Satoshi Uda, Kozo Fujiwara, Jun Nozawa, Haruhiko Koizumi, Shun-ichi Sato, Yuichi Kozawa, Takahiro Nakamura
APPLIED PHYSICS EXPRESS, 6, 1, 015501-, 2013
テラヘルツ波方式による絶縁被覆電線の素線断線可視化技術
高橋星也, 中村悠太, 田邉匡生, 前田健作, 中嶋かおり, 浜野知行, 小山裕
電子情報通信学会信学技報, 113, 357, 81-86, 2013
半絶縁性GaAsのbelow gap光キャリア励起によるテラヘルツ放射
清水祐作, 出崎光, 前田健作, 小山裕
電子情報通信学会信学技報, 113, 357, 75-79, 2013
誘電体クラッド層挿入によるスラブ導波路GaP結晶からのテラヘルツ波発生高効率化
出崎光, 前田健作, 小山裕
電子情報通信学会信学技報, 113, 357, 69-74, 2013
非侵襲血糖値計測へ向けたグルコース水溶液のテラヘルツ波反射特性解析
千葉裕典, 中嶋かおり, 浜野知行, 前田健作, 小山裕
電子情報通信学会信学技報, 113, 357, 87-90, 2013
Effect of silicon/crucible interfacial energy on orientation of multicrystalline silicon ingot in unidirectional growth
K. Fujiwara, K. Maeda, H. Koizumi, J. Nozawa, S. Uda
Journal of Applied Physics, 112, 11, 113521-, 2012
Crystal and faceted dendrite growth of silicon near (100)
Xinbo Yang, K. Fujiwara, R. Gotoh, K. Maeda, J. Nozawa, H. Koizumi, S. Uda
Acta Materialia, 60, 8, 3259-3267, 2012
Formation mechanism of twin boundaries in lithium tetraborate
K. Maeda, K. Fujiwara, J. Nozawa, H. Koizumi, S. Uda
Journal of Crystal Growth, 331, 1, 78-82, 2011
Dependence of si-faceted dendrite growth orientation on twin spacing and undercooling
Xinbo Yang, K. Fujiwara, K. Maeda, J. Nozawa, H. Koizumi, S. Uda
Crystal Growth and Design, 11, 4, 1402-1410, 2011
Dependence of Si faceted dendrite growth velocity on undercooling
Xinbo Yang, K. Fujiwara, K. Maeda, J. Nozawa, H. Koizumi, S. Uda
Applied Physics Letters, 98, 1, 012113-, 2011
Effect of twin spacing on the growth velocity of Si faceted dendrites
Xinbo Yang, Kozo Fujiwara, Raira Gotoh, Kensaku Maeda, Jun Nozawa, Haruhiko Koizumi, Satoshi Uda
APPLIED PHYSICS LETTERS, 97, 17, 172104-, 2010
Growth mechanism of Si-faceted dendrites
K. Fujiwara, K. Maeda, N. Usami, K. Nakajima
Physical Review Letters, 101, 5, 055503-, 2008
In situ observation of Si faceted dendrite growth from low-degree-of-undercooling melts
Kozo Fujiwara, Kensaku Maeda, Noritaka Usami, Gen Sazaki, Yoshitaro Nose, Akiko Nomura, Toetsu Shishido, Kazuo Nakajima
ACTA MATERIALIA, 56, 11, 2663-2668, 2008
Formation mechanism of parallel twins related to Si-facetted dendrite growth
K. Fujiwara, K. Maeda, N. Usami, G. Sazaki, Y. Nose, K. Nakajima
Scripta Materialia, 57, 2, 81-84, 2007