Oxide thin film transistors fabricated by solution process
Eisuke Tokumitsu, Tatsuya Shimoda
Journal of the Institute of Electronics, Information and Communication Engineers, 97, 187-192, 2014

Effect of Coercive Voltage and Charge Injection on Performance of a Ferroelectric-Gate Thin-Film Transistor
P. T. Tue, T. Miyasako, E. Tokumitsu, T. Shimoda
ADVANCES IN MATERIALS SCIENCE AND ENGINEERING, 2013, -, 2013

Materials Research Society Symposium Proceedings: Preface
Yoshihisa Fujisaki, Panagiotis Dimitrakis, Eisuke Tokumitsu, Michael N. Kozicki
Materials Research Society Symposium Proceedings, 1430, -, 2012

Materials Research Society Symposium Proceedings: Preface
Dirk J. Wouters, Eisuke Tokumitsu, Orlando Auciello, Panagiotis Dimitrakis, Yoshihisa Fujisaki
Materials Research Society Symposium Proceedings, 1337, -, 2011

Multiagent strategic interaction based on a game theoretical approach to polarization reversal in ferroelectric capacitors
Dan Ricinschi, Eisuke Tokumitsu
Journal of Advanced Computational Intelligence and Intelligent Informatics, 15, 806-812, 2011

Analysis on interface layer between Pt electrode and ferroelectric layer of solution-processed PZT capacitor
Thanh V. Pham, Trinh N. Q. Bui, Tue T. Phan, Takaaki Miyasako, Eisuke Tokumitsu, Tatsuya Shimoda
Materials Research Society Symposium Proceedings, 1368, 41-46, 2011

Lanthanum oxide capping layer for solution-processed ferroelectric-gate thin-film transistors
Tue T. Phan, Trinh N. Q. Bui, Takaaki Miyasako, Thanh V. Pham, Eisuke Tokumitsu, Tatsuya Shimoda
Materials Research Society Symposium Proceedings, 1337, 137-143, 2011

Materials Research Society Symposium Proceedings: Preface
Caroline Bonafos, Yoshihisa Fujisaki, Panagiotis Dimitrakis, Eisuke Tokumitsu
Materials Research Society Symposium Proceedings, 1250, -, 2010

Fabrication of IGZO and In2O3-channel ferroelectric-gate thin film transistors
Eisuke Tokumitsu, Tomohiro Oiwa
Materials Research Society Symposium Proceedings, 1250, 145-150, 2010

Electric field effects on radiative transition in quantum dot inorganic electroluminescent devices
Yuki Tani, Satoshi Kobayashi, Eisuke Tokumitsu
IEICE ELECTRONICS EXPRESS, 7, 4, 288-294, 2010

Flexible High-Performance Amorphous InGaZnO4 Thin-Film Transistors Utilizing Excimer Laser Annealing
Mitsuru Nakata, Kazushige Takechi, Toshimasa Eguchi, Eisuke Tokumitsu, Hirotaka Yamaguchi, Setsuo Kaneko
JAPANESE JOURNAL OF APPLIED PHYSICS, 48, 8, 081607 1-7-0816077, 2009

Effects of Thermal Annealing on ZnO Thin-Film Transistor Characteristics and the Application of Excimer Laser Annealing in Plastic-Based ZnO Thin-Film Transistors
Mitsuru Nakata, Kazushige Takechi, Toshimasa Eguchi, Eisuke Tokumitsu, Hirotaka Yamaguchi, Setsuo Kaneko
JAPANESE JOURNAL OF APPLIED PHYSICS, 48, 8, 081608 1-7-0816087, 2009

Preparation of SrBi_2Ta_2O_9 thin films by liquid delivery MOCVD method using RF plasma process
JIMBO Takehito, SANO Haruyuki, FUNAKUBO Hiroshi, TOKUMITSU Eisuke, ISHIWARA Hiroshi
IEICE technical report. Electron devices, 98, 591, 7-12, 2009

Improvement of InGaZnO4 Thin Film Transistors Characteristics Utilizing Excimer Laser Annealing
Mitsuru Nakata, Kazushige Takechi, Kazufumi Azuma, Eisuke Tokumitsu, Hirotaka Yamaguchi, Setsuo Kaneko
APPLIED PHYSICS EXPRESS, 2, 2, 021102-1~3-, 2009

Fabrication and Characterization of ITO/BZN Thin Film Transistors
Eisuke Tokumitsu, Yohei Kondo
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 54, 1, 539-543, 2009

Anomalously High Channel Mobility in SiC-MOSFETs with Al2O3/SiOx/SiC Gate Structure
Shiro Hino, Tomohiro Hatayama, Jun Kato, Naruhisa Miura, Tatsuo Oomori, Eisuke Tokumitsu
SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 600-603, 683-+, 2009

Anomalously High Channel Mobility in SiC-MOSFETs with Al2O3/SiOx/SiC Gate Structure
Shiro Hino, Tomohiro Hatayama, Jun Kato, Naruhisa Miura, Tatsuo Oomori, Eisuke Tokumitsu
SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 600-603, 683-+, 2009

Anomalously High Channel Mobility in SiC-MOSFETs with Al2O3/SiOx/SiC Gate Structure
Shiro Hino, Tomohiro Hatayama, Jun Kato, Naruhisa Miura, Tatsuo Oomori, Eisuke Tokumitsu
SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 600-603, 683-+, 2009

Remarkable increase in the channel mobility of SiC-MOSFETs by controlling the interfacial SiO(2) layer between Al(2)O(3) and SiC
Tomohiro Hatayama, Shiro Hino, Naruhisa Miura, Tatsuo Oomori, Eisuke Tokumitsu
IEEE TRANSACTIONS ON ELECTRON DEVICES, 55, 8, 2041-2045, 2008

High channel mobility 4H-SiC metal-oxide-semiconductor field-effect transistor with low temperature metal-organic chemical-vapor deposition grown Al(2)O(3) gate insulator
S. Hino, T. Hatayama, J. Kato, E. Tokumitsu, N. Miura, T. Oomori
APPLIED PHYSICS LETTERS, 92, 18, 183503-, 2008

Fabrication and characterization of M-I-FIS ferroelectric-gate structures using HfAlOx buffer layer
E. Tokumitsu, Y. Takano, H. Shibata, H. Saiki
MICROELECTRONIC ENGINEERING, 84, 9-10, 2018-2021, 2007

Data retention and readout degradation properties of Pt/Sr0.7Sm0.07Bi2.2Ta2O9/HfO2/Si structure ferroelectric-gate field effect transistors
Hirokazu Saiki, Eisuke Tokumitsu
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46, 1, 261-266, 2007

Tutorial 1:Materials and Processes for Nonvolatile Memories---Ferroelectric Materials and FeRAM---
Eisuke Tokumitsu
-, 2007

FeRAMの最近の進展と強誘電体ゲート構造メモリ
徳光永輔
JSAP Catalog, AP072329, 55-60, 2007

Fabrication and characterization of 4H-SiC MOSFET with MOCVD-grown Al2O3 gate insulator
Shiro Hino, Tomohiro Hatayama, Naruhisa Miura, Tatsuo Oomori, Eisuke Tokumitsu
SILICON CARBIDE AND RELATED MATERIALS 2006, 556-557, 787-+, 2007

Tutorial 1:Materials and Processes for Nonvolatile Memories---Ferroelectric Materials and FeRAM---
Eisuke Tokumitsu
-, 2007

Fabrication and characterization of 4H-SiC MOSFET with MOCVD-grown Al2O3 gate insulator
Shiro Hino, Tomohiro Hatayama, Naruhisa Miura, Tatsuo Oomori, Eisuke Tokumitsu
SILICON CARBIDE AND RELATED MATERIALS 2006, 556-557, 787-+, 2007

ITO-channel ferroelectric-gate thin film transistor with large on-current
Eisuke Tokumitsu
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 717-720, 2007

Fabrication and characterization of 4H-SiC MOSFET with MOCVD-grown Al2O3 gate insulator
Shiro Hino, Tomohiro Hatayama, Naruhisa Miura, Tatsuo Oomori, Eisuke Tokumitsu
SILICON CARBIDE AND RELATED MATERIALS 2006, 556-557, 787-+, 2007

Sol-gel derived (Bi,La)(4)Ti(3)O(12) thin films with surface treatment before crystallization annealing
E. Tokumitsu, N. Sugita, S. Boku, T. Aoki, T. Tani
2007 SIXTEENTH IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2, 122-125, 2007

Fabrication of Transparent Ferroelectric-Gate Thin Film Transistors with Nonvolatile Memory Operation
Eisuke Tokumitsu, Masaru Senoo, Etsu Shin
Materials Research Society Symp. Proc., 902E, T10-54.1-54.6-, 2006

Fabrication of Transparent Ferroelectric-Gate Thin Film Transistors with Nonvolatile Memory Operation
Eisuke Tokumitsu, Masaru Senoo, Etsu Shin
Materials Research Society Symp. Proc., 902E, T10-54.1-54.6-, 2006

Fabrication of transparent ferroelectric-gate thin film transistors with nonvolatile memory operation
Eisuke Tokumitsu, Masaru Senoo, Etsu Shin, Takaaki Miyasako
Materials Research Society Symposium Proceedings, 902, 287-292, 2005

Use of ferroelectric gate insulator for thin film transistors with ITO channel
E Tokumitsu, M Senoo, T Miyasako
MICROELECTRONIC ENGINEERING, 80, 305-308, 2005

Ferroelectric-gate thin-film transistors using indium-tin-oxide channel with large charge controllability
T Miyasako, M Senoo, E Tokumitsu
APPLIED PHYSICS LETTERS, 86, 16, 162902-1～3-3, 2005

Impact of low pressure consolidation annealing on electrical properties of sol-gel derived Pb(Zr,Ti)O-3 films
E Tokumitsu, T Miyasako, M Senoo
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 25, 12, 2277-2280, 2005

Special section on fundamental and application of advanced semiconductor sevices: Forward
Eisuke Tokumitsu
IEICE Transactions on Electronics, E88-C, 4, 639-, 2005

Non-volatile thin film transistors using ferroelectric/ITO structures
E Tokumitsu, T Miyasako, M Senoo
Materials and Processes for Nonvolatile Memories, 830, 107-112, 2005

Ferroelectric split-gate-field-effect-transistors for nonvolatile memory cell array
H Saiki, E Tokumitsu
IEICE TRANSACTIONS ON ELECTRONICS, E87C, 10, 1700-1705, 2004

Electrical properties of sol-gel derived ferroelectric Pb(ZrTi)O-3 films fabricated using low-pressure consolidation process
T Miyasako, M Senoo, E Tokumitsu
IEICE TRANSACTIONS ON ELECTRONICS, E87C, 10, 1694-1699, 2004

Ferroelectric split-gate-field-effect-transistors for nonvolatile memory cell array
H Saiki, E Tokumitsu
IEICE TRANSACTIONS ON ELECTRONICS, E87C, 10, 1700-1705, 2004

Electrical properties of sol-gel derived ferroelectric Pb(ZrTi)O-3 films fabricated using low-pressure consolidation process
T Miyasako, M Senoo, E Tokumitsu
IEICE TRANSACTIONS ON ELECTRONICS, E87C, 10, 1694-1699, 2004

Effect of deposition temperature on the characteristics of hafnium oxide films deposited by metalorganic chemical vapor deposition using amide precursor
K Takahashi, H Funakubo, S Hino, M Nakayama, N Ohashi, T Kiguchi, E Tokumitsu
JOURNAL OF MATERIALS RESEARCH, 19, 2, 584-589, 2004

Ferroelectric split-gate-field-effect-transistors for nonvolatile memory cell array
Hirokazu Saiki, Eisuke Tokumitsu
IEICE Transactions on Electronics, E87-C, 1700-1705, 2004

Electrical properties of sol-gel derived ferroelectric Pb(Zr,Ti)O 3 films fabricated using low-pressure consolidation process
Takaaki Miyasako, Masaru Senoo, Eisuke Tokumitsu
IEICE Transactions on Electronics, E87-C, 1694-1699, 2004

Characterization of metal-ferroelectric-metal-insulator-semiconductor (MFMIS) FETs using (Sr,Sm)(0.8)Bi2.2Ta2O9 (SSBT) thin films
H Saiki, E Tokumitsu
FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES, 786, 315-320, 2004

Characterization of metal-ferroelectric-metal-insulator-semiconductor (MFMIS) FETs using (SrSm)(0.8)Bi2.2Ta2O9 (SSBT) thin films
H Saiki, E Tokumitsu
FERROELECTRIC THIN FILMS XII, 784, 485-490, 2004

Source gas pulse-introduced MOCVD of HfO2 thin films using Hf(O-t-C4H9)(4)
M Nakayama, K Takahashi, S Hino, H Funakubo, E Tokumitsu
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 151, 11, C698-C701, 2004

Characterization of hafnium oxide thin films by source gas pulse introduced metalorganic chemical vapor deposition, using amino-family Hf precursors
S Hino, M Nakayama, K Takahashi, H Funakubo, E Tokumitsu
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42, 9B, 6015-6018, 2003

Characterization of hafnium oxide thin films by source gas pulse introduced metalorganic chemical vapor deposition, using amino-family Hf precursors
S Hino, M Nakayama, K Takahashi, H Funakubo, E Tokumitsu
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42, 9B, 6015-6018, 2003

Characterization of hafnium oxide thin films by source gas pulse introduced metalorganic chemical vapor deposition, using amino-family Hf precursors
S Hino, M Nakayama, K Takahashi, H Funakubo, E Tokumitsu
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42, 9B, 6015-6018, 2003

In situ Raman spectroscopy observation of crystallization process of sol-gel derived Bi4-xLaxTi3O12 films
N Sugita, E Tokumitsu, M Osada, M Kakihana
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 42, 8A, L944-L945, 2003

In situ Raman spectroscopy observation of crystallization process of sol-gel derived Bi4-xLaxTi3O12 films
N Sugita, E Tokumitsu, M Osada, M Kakihana
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 42, 8A, L944-L945, 2003

In situ Raman spectroscopy observation of crystallization process of sol-gel derived Bi4-xLaxTi3O12 films
N Sugita, E Tokumitsu, M Osada, M Kakihana
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 42, 8A, L944-L945, 2003

Preparation of hafnium oxide films from oxygen-free Hf[N(C2H5)(2)](4) precursor and their properties
K Takahashi, M Nakayama, S Yokoyama, T Kimura, E Tokumitsu, H Funakubo
APPLIED SURFACE SCIENCE, 216, 1-4, 296-301, 2003

Ferroelectric-gate structures using ferroelectric (Sr,Sm)Bi_2_Ta_2_O_9_ films with Al_2_O_3_/Si_3_N_4_ buffer layer
E.Tokumitsu, M.Kishi, K.Iseki, Y.Fujisaki H.Ishiwara
2003 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices, -, 2003

交互供給MOCVD法によるゲート絶縁膜用HfO2薄膜の作成と評価
中山誠, 高橋健治, 日野史郎, 舟窪浩, 徳光永輔
応用物理学会薄膜･表面分科会（第8回研究会）, -, 2003

HfO2のMOCVD成膜におけるH2O酸化剤の効果
徳光永輔, 中山誠, 日野史郎, 高橋健治, 舟窪浩
電子情報通信学会シリコン材料・デバイス研究会, -, 2003

交互供給MOCVD法によるゲート絶縁膜用HfO2薄膜の作製と評価
中山誠, 高橋健治, 日野史郎, 舟窪浩, 徳光永輔
電子情報通信学会総合大会, -, 2003

HfO2 Thin Films with Low Residua Impurity Concentrations Grown on Si Substrates by Metal-Organic Chemical Vapor Deposition Using Hf(O-t-C4H9)4 and H2O
Eisuke Tokumitsu, K. Takahashi, M. Nakayama, S. Hino, Hiroshi Funakubo
The IEEE 2003 International Meeting for Future of Electron Devices, E-3, -, 2003

Growth of hafnium oxide films by metalorganic chemical vapor deposition using oxygen-free Hf[N(C2H5)(2)](4) precursor and their properties
K Takahashi, M Nakayama, S Hino, E Tokumitsu, H Funakubo
INTEGRATED FERROELECTRICS, 57, 1185-1192, 2003

Use of plasma treatment in the sol-gel process of ferroelectric (Bi,La )4Ti3O12 thin films for crystalline orientation control
Naoki Sugita, Sei-Ichi Boku, Eisuke Tokumitsu
Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003, 46-47, 2003

Preparation and characterization of sol-gel derived (Sr,Ba)Bi-2(Ta,Nb)(2)O-9 thin films for ferroelectric-gate FET applications
E Tokumitsu, M Kishi
FERROELECTRICS, 292, 15-21, 2003

Sm doping effects on electrical properties of sol-gel derived SrBi2Ta2O9 films
E Tokumitsu, M Kishi
FERROELECTRIC THIN FILMS XI, 748, 275-280, 2003

Sm doping effects on electrical properties of sol-gel derived SrBi2Ta2O9 films
E Tokumitsu, M Kishi
CRYSTALLINE OXIDE-SILICON HETEROSTRUCTURES AND OXIDE OPTOELECTRONICS, 747, 17-22, 2003

IrO2/Ir multilayer-structure electrode for MFMIS ferroelectric gate transistors
N Sugita, E Tokumitsu
INTEGRATED FERROELECTRICS, 52, 103-109, 2003

Characterization of sol-gel derived Bi4-xLaxTi3O12 films
N Sugita, M Osada, E Tokumitsu
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 41, 11B, 6810-6813, 2002

Characterization of metal-ferroelectrie-metal-insulator-semiconductor (MFMIS) structures using (Bi,La)(4)Ti3O12 and HfO2 buffer layers
T Suzuki, E Tokumitsu
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 41, 11B, 6886-6889, 2002

Preparation of HfO_2 thin films by chemical vapor deposition for gate-insulator applications
NAKAYAMA Makoto, TAKAHASHI Kenji, FUNAKUBO Hiroshi, TOKUMITSU Eisuke
Technical report of IEICE. SDM, 102, 178, 149-153, 2002

構造中に酸素を含まないHfを用いたＭＯＣＶＤ法によるHfO_2_薄膜の合成と評価
高橋健治, 中山誠, 水平学, 徳光永輔, 舟窪浩
応用物理学会2002年春講演会, 28p-A-11, 821-, 2002

Hf(O･t-C_4_H_9_)_4_ を用いたＭＯＣＶＤ法によるHfO_2_薄膜の作製と特性評価
中山誠, 高橋健治, 舟窪浩, 徳光永輔
応用物理学会2002年春講演会, 28p-A-12, 821-, 2002

Hf[(C_2_H_5_)_2_]_4_から合成した高誘電率界面層を有するHfO_2_薄膜の特性評価
高橋健治, 中山誠, 日野史郎, 舟窪浩, 徳光永輔
応用物理学会2002年秋講演会, 25a-C-2, 721-, 2002

Characterization of HfO2 Films Grown on Silicon Substrate by metal-organic Chemical Vapor Deposition
Eisuke Tokumitsu, Kenji Takahashi, Makoto Nakayam, Hiroshi Funakubo
Fourth International Symposium on Control of Semiconductor Interface, 2-10, 2002

Ferroelectric-gate structures and field-effect transistors using (Bi,La)(4)Ti3O12 films
E Tokumitsu, T Suzuki, N Sugita
FERROELECTRIC THIN FILMS X, 688, 67-72, 2002

Preparation of Sr-2(Ta,Nb)(2)O-7 films by the sol-gel technique for ferroelectric-gate structures
E Tokumitsu, N Unno
FERROELECTRICS, 271, 1695-1700, 2002

Preparation and characterization of (Bi,La)4Ti3O12 films by the Sol-Gel technique
Eisuke Tokumitsu, Takeaki Isobe, Takeshi Kijima, Hiroshi Ishiwara
Materials Research Society Symposium - Proceedings, 655, -, 2001

Fabrication and characterization of metal-ferroelectric-metal-insulator-semiconductor (MFMIS) structures using ferroelectric (Bi, La)(4)Ti3O12 films
E Tokumitsu, T Isobe, T Kijima, H Ishiwara
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 40, 9B, 5576-5579, 2001

Fabrication and characterization of metal-ferroelectric-metal-insulator-semiconductor (MFMIS) structures using ferroelectric (Bi, La)(4)Ti3O12 films
E Tokumitsu, T Isobe, T Kijima, H Ishiwara
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 40, 9B, 5576-5579, 2001

Characteristics of ferroelectric Pb(Zr,Ti)O-3 films epitaxially grown on CeO2(111)/Si(111) substrates
BK Moon, H Ishiwara, E Tokumitsu, M Yoshimoto
THIN SOLID FILMS, 385, 1-2, 307-310, 2001

Low voltage operation of nonvolatile metal-ferroelectric-metal-insulator-semiconductor (MFMIS)-field-effect-transistors (FETs) using Pt/SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si structures
E Tokumitsu, K Okamoto, H Ishiwara
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 40, 4B, 2917-2922, 2001

Low voltage operation of nonvolatile metal-ferroelectric-metal-insulator-semiconductor (MFMIS)-field-effect-transistors (FETs) using Pt/SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si structures
E Tokumitsu, K Okamoto, H Ishiwara
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 40, 4B, 2917-2922, 2001

Ferroelectricity of YMnO3 thin films on Pt(111)/Al2O3(0001) and Pt(111)/Y2O3(111)/Si(111) structures grown by molecular beam epitaxy
S Imada, T Kuraoka, E Tokumitsu, H Ishiwara
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 40, 2A, 666-671, 2001

Ferroelectricity of YMnO3 thin films on Pt(111)/Al2O3(0001) and Pt(111)/Y2O3(111)/Si(111) structures grown by molecular beam epitaxy
S Imada, T Kuraoka, E Tokumitsu, H Ishiwara
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 40, 2A, 666-671, 2001

Low leakage La_2_O_3_ gate insulator film with EOT of 0.8-1.2nm
S.Ohmi C.Kobayashi, E.Tokumitsu, H.Ishiwara H.Iwai
2001 Intern. Conf. on Solid State Devies and Materials, Tokyo, No.B-9-1, 496-497, 2001

Ferroelectricity of YMnO_3_ Thin Films on Pt(111)/ Al_2_O_3_(0001)and Pt(111)/Y_2_O_3_(111)/Si(111) structures grown by Molwcular Beam Epitaxy
S.Imada, E.Tokumitsu, H.Ishiwara
Jpn. J. Appl. Phys., 40, 2A, 666-671, 2001

Low Voltage Operation of Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor(MFMIS)-Field-Effect-Transistors(FETs) Using Pt/SrBi_2_Ta_2_O_9_/Pt/SrTa_2_O_6_/SiON/Si Structures
Eisuke TOKUMITSU, Kojiro OKAMOTO, Hiroshi ISHIWARA
Jpn. J. Appl. Phys., 40, 4B, 2917-2922, 2001

Fabrication and Characterization of Metal- Ferroelectric-Metal-Insulator-Semiconductor (MFMIS) Structures Using Ferroelectric (Bi,La)_4_Ti_3_O_12_ Films
E.Tokumitsu, Takeaki Isobe, Takeshi Kijima, HIROSHI ISHIWARA
Jpn. J. Appl. Phys, 40, 9B, 5576-5579, 2001

MFIS- and MFMIS-structures using (Sr,Ba)Bi2Ta2O9 films for ferroelectric-gate FET applications
E Tokumitsu, S Imafuku
PROCEEDINGS OF THE 2001 12TH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, VOLS I AND II, 1, 341-344, 2001

Ferroelectric properties of face-to-face annealed Sr0.8BixTa2O9 thin films
E Aizawa, K Iizuka, E Tokumitsu, H Ishiwara
PROCEEDINGS OF THE 2001 12TH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, VOLS I AND II, 2, 901-904, 2001

High quality ultrathin La2O3 films for high-k gate insulator
Shun-Ichiro Ohmi, Chihiro Kobayashi, Koji Aizawa, Shuu'ichirou Yamamoto, Eisuke Tokumitsu, Hiroshi Ishiwara, Hiroshi Iwai
European Solid-State Device Research Conference, 235-238, 2001

Improvement of memory retention characteristics in ferroelectric neuron circuits using a Pt/SrBi2Ta2O9/Pt/Ti/SiO2/Si structure-field effect transistor as a synapse device
Sung Min Yoon, Eisuke Tokumitsu, Hiroshi Ishiwara
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 39, 2119-2124, 2000

Electrical properties of metal-ferroelectric-insulator-semiconductor (MFIS)-and metal-ferroelectric-metal-insulator-semiconductor (MFMIS)-FETs using ferroelectric SrBi2Ta2O9 film and SrTa2O6/SiON buff
Eisuke Tokumitsu, Gen Fujii, Hiroshi Ishiwara
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 39, 2125-2130, 2000

Characterization of metal-ferroelectric-(metal-)insulator-Semiconductor (MF(M)IS) structures using (Pb, La)(Zr, Ti)O-3 and Y2O3 films
E Tokumitsu, D Takahashi, H Ishiwara
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 39, 9B, 5456-5459, 2000

Characterization of metal-ferroelectric-(metal-)insulator-Semiconductor (MF(M)IS) structures using (Pb, La)(Zr, Ti)O-3 and Y2O3 films
E Tokumitsu, D Takahashi, H Ishiwara
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 39, 9B, 5456-5459, 2000

Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-FETs Using Pt/SrBi_2Ta_2O_9/Pt/SrTa_2O_6/SiON/Si Structures Operating at 3.5V
TOKUMITSU Eisuke, OKAMOTO Kojiro, ISHIWARA Hiroshi
Extended abstracts of the ... Conference on Solid State Devices and Materials, 2000, 260-261, 2000

Ferroelectric neuron integrated circuits using SrBi2Ta2O9-gate FET's and CMOS Schmitt-trigger oscillators
SM Yoon, E Tokumitsu, H Ishiwara
IEEE TRANSACTIONS ON ELECTRON DEVICES, 47, 8, 1630-1635, 2000

Impact of face-to-face annealing in preparation of sol-gel-derived SrBi2Ta2O9 thin films
K Aizawa, E Tokumitsu, K Okamoto, H Ishiwara
APPLIED PHYSICS LETTERS, 76, 18, 2609-2611, 2000

Electrical properties of metal-ferroelectric-insulator-semiconductor (MFIS)-and metal-ferroelectric-metal-insulator-semiconductor (MFMIS)-FETs using ferroelectric SrBi2Ta2O9 film and SrTa2O6/SiON buffer layer
E Tokumitsu, G Fujii, H Ishiwara
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 39, 4B, 2125-2130, 2000

Improvement of memory retention characteristics in ferroelectric neuron circuits using a Pt/SrBi2Ta2O9/Pt/Ti/SiO2/Si structure-field effect transistor as a synapse device
SM Yoon, E Tokumitsu, H Ishiwara
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 39, 4B, 2119-2124, 2000

Electrical properties of metal-ferroelectric-insulator-semiconductor (MFIS)-and metal-ferroelectric-metal-insulator-semiconductor (MFMIS)-FETs using ferroelectric SrBi2Ta2O9 film and SrTa2O6/SiON buffer layer
E Tokumitsu, G Fujii, H Ishiwara
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 39, 4B, 2125-2130, 2000

Fabrication of PZT films on Si substrates by sol-gel method using Y_2_O_3_ buffer layers
B-E. Park, E. Tokumitsu, H. Ishiwara
12th Intern. Sympo. on. Integrated Ferroelectrics, 196-, 2000

Adaptive-learning neuron circuit using ferroelectric-gate FETs
S-M.Yoon, E.Tokumitsu, H.Ishiwara
12th Intern. Sympo. on. Integrated Ferroelectrics, 331-, 2000

ゾルゲル法による(Bi,La)_4_Ti_3_O_12_/SiN/Si構造の作製
木島健, 磯辺武揚, 徳光永輔, 石原宏
第61回応用物理学会学術講演会, 7a-G-11/II-, 2000

New Pt/(Bi,La)_4_Ti_3_O_12_/Si_3_N_4_/Si MFIS structure for FET-type ferroelectric memories by the sol-gel method
T. Kijima, Y. Fujisaki T. Isobe, E. Tokumitsu, H. Ishiwara
Mater. Res. Soc. Sympo. (Ferroelectric Thin films IX), CC-3.6,-, 2000

Ｓｒ、Ta新原料を用いた溶液気化MOCVD法によるSBT薄膜の作成
藤井俊成, 神保武人, 舟窪浩, 徳光永輔, 石原宏
応用物理学会, 30a-P11-10, 528-, 2000

溶液気化MOCVD法により作成したSrBi2Ta2O9薄膜の評価と膜質改善
神保武人, 藤井俊成, 磯部武揚, 舟窪浩, 徳光永輔, 石原宏
応用物理学会, 30a-P11-31, 535-, 2000

Characterization of Metal-Ferroelectric-(Metal-) Insulator-Semiconductor(MF(M)IS)Structures Using (Pb,La)(Zr,Ti)O_3_ and Y_2_O_3_ Films
Eisuke TOKUMITSU, Daisuke TAKAHASHI, HIiroshi ISHIWARA
Jpn. J. Appl. Phys., 39, 9B, 5456-5459, 2000

Improvement of Memory Retention Characteristics in Ferroelectric Neuron Circuits Using a Pt/ SrBi_2_Ta_2_O_9_/Pt/Ti/SiO_2_/Si Structure-Field Effect Transistor as a Synapse Device
Sung-ming YOON, Eisuke TOKUMITSU, Hiroshi ISHIWARA
Jpn. J. Appl. Phys., 39, 4B, 2119-2124, 2000

Characterization of Metal-Ferroelectric- (Metal-)Insulator-Semiconductor(MF(M)IS)Structures Using (Pb,La)(Zr,Ti)O_3_and Y_2_O_3_ Films
E. Tokumitsu, D. Takahashi, H. Ishiwara
Jpn. J. Appl. Phys., 39, 9B, 5456-5459, 2000

Characterization of Metal-Ferroelectric-(Metal-) Insulator-Semiconductor(MF(M)IS)Structures Using (Pb,La)(Zr,Ti)O_3_ and Y_2_O_3_ Films
Eisuke TOKUMITSU, Daisuke TAKAHASHI, HIiroshi ISHIWARA
Jpn. J. Appl. Phys., 39, 9B, 5456-5459, 2000

Realization of adaptive learning function in a neuron circuit using metal/ferroelectric (SrBi2Ta2O9)/semiconductor field effect transistor (MFSFET)
Sung Min Yoon, Eisuke Tokumitsu, Hiroshi Ishiwara
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 38, 2289-2293, 1999

Preparation of SrBi2Ta2O9 thin films by liquid-delivery metalorganic chemical vapor deposition using a double alcoholate source
T Jimbo, H Sano, Y Takahashi, H Funakubo, E Tokumitsu, H Ishiwara
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 38, 11, 6456-6461, 1999

Preparation of SrBi2Ta2O9 thin films by liquid-delivery metalorganic chemical vapor deposition using a double alcoholate source
T Jimbo, H Sano, Y Takahashi, H Funakubo, E Tokumitsu, H Ishiwara
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 38, 11, 6456-6461, 1999

Preparation of SrBi2Ta2O9 thin films by liquid-delivery metalorganic chemical vapor deposition using a double alcoholate source
T Jimbo, H Sano, Y Takahashi, H Funakubo, E Tokumitsu, H Ishiwara
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 38, 11, 6456-6461, 1999

Adaptive-learning neuron integrated circuits using metal-ferroelectric (SrBi2Ta2O9)-semiconductor (MFS) FET's
SM Yoon, E Tokumitsu, H Ishiwara
IEEE ELECTRON DEVICE LETTERS, 20, 10, 526-528, 1999

Electrical Properties of MFIS-and MFMIS-FETs Using Ferroelectric SrBi_2Ta_2O_9 Film and SrTa_2Ta_2O_6/SiON Buffer Layer
TOKUMITSU Eisuke, FUJII Gen, ISHIWARA Hiroshi
Extended abstracts of the ... Conference on Solid State Devices and Materials, 1999, 404-405, 1999

Nonvolatile ferroelectric-gate field-effect transistors using SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si structures
E Tokumitsu, G Fujii, H Ishiwara
APPLIED PHYSICS LETTERS, 75, 4, 575-577, 1999

An electrically modifiable synapse array composed of metal-ferroelectric-semiconductor (MFS) FET's using SrBi2Ta2O9 thin films
SM Yoon, E Tokumitsu, H Ishiwara
IEEE ELECTRON DEVICE LETTERS, 20, 5, 229-231, 1999

BaMgF_4_/Pt/SiO_2_/Si構造MFMIS-FETの特性評価（2）
西山淳, 會澤康治, 徳光永輔, 石原宏
第46回応用物理学関係連合講演会, 31p-K-9/II-, 1999

Y_2_O_3_バッファー層を用いたPLZT薄膜のSi基板上への形成
高橋大輔, 朴炳垠, 徳光永輔, 石原宏
第60回応用物理学会学術講演会, 2p-A-2/II-, 1999

Characterization of Pt/SrBi_2_Ta_2_O_9_/Pt/SiO_2_/Si MFMIS structures for ferroelectric-gate FET applications
E. Tokumitsu, A. Amano, G. Fujii, H. Ishiwara
Abst. of '99 Asian Conf. on Electrochemistry, 1PA10, 64-, 1999

Characterization of MFIS and MFMIS structures using SrBi_2_Ta_2_O_9_ film with SrTa_2_O_6_/SiON stacked buffer layer
E. Tokumitsu, G. Fujii, H. Ishiwara
41st Electronic. Mater. Conf., O-6-, 1999

Electrical properties of Pt/SrBi_2_Ta_2_O_9_/Pt/SiO_2_/Si MFMIS structures and FETs with various area rations of MFM capacitor to Pt floating gate
E. Tokumitsu, A. Amano, G. Fujii, H. Ishiwara
Technical report of IEICE, SDM99-95-, 1999

Fabrication and characterization of neuron circuits using ferroelectric-gate transistors
E. Tokumitsu, S-M. Yoo, H. Ishiwara
-, 1999

Preparation and characterization of Bi2VO5.5 films by MOD method
E Tokumitsu, Y Takahashi, H Ishiwara
FERROELECTRIC THIN FILMS VII, 541, 555-560, 1999

Effects of growth conditions and RF plasma on crystalline and electrical properties of SrBi2Ta2O9 thin films grown by liquid delivery MOCVD using a double alcoholate
T Jimbo, H Sano, Y Takahashi, H Funakubo, E Tokumitsu, H Ishiwara
INTEGRATED FERROELECTRICS, 26, 1-4, 811-819, 1999

PREPARATION AND CHARACTERIZATION OF Bi2VO5.5 FILMS BY MOD METHOD
E.TOKUMITSU, Yuji TAKAHASHI, H.ISHIWARA
Mater. Res. Soc. Sympo. Proc., 541, 555-560, 1999

Effects of growth conditions and RF plasma on crystalline and electrical properties of SrBi2Ta2O9 thin films grown by liquid delivery MOCVD using a double alcoholate
T Jimbo, H Sano, Y Takahashi, H Funakubo, E Tokumitsu, H Ishiwara
INTEGRATED FERROELECTRICS, 26, 1-4, 811-819, 1999

MBE growth of ferroelectric YMnO3 thin films on Si(111) using Y2O3 buffer layers.
S Imada, S Shouriki, E Tokumitsu, H Ishiwara
FERROELECTRIC THIN FILMS VII, 541, 585-590, 1999

Preparation and characterization of Bi2VO5.5 films by MOD method
E Tokumitsu, Y Takahashi, H Ishiwara
FERROELECTRIC THIN FILMS VII, 541, 555-560, 1999

Effects of growth conditions and RF plasma on crystalline and electrical properties of SrBi2Ta2O9 thin films grown by liquid delivery MOCVD using a double alcoholate
T Jimbo, H Sano, Y Takahashi, H Funakubo, E Tokumitsu, H Ishiwara
INTEGRATED FERROELECTRICS, 26, 1-4, 811-819, 1999

TEM observation of ferroelectric films grown on silicon using Y2O3 buffer layer
MM Sarinanto, S Imada, S Shoriki, BE Park, E Tokumitsu, H Ishiwara
INTEGRATED FERROELECTRICS, 27, 1-4, 1125-1135, 1999

C-V characteristics of Al/BaMgF4/Si(111) diodes fabricated by dry etching process
Koji Aizawa, Shigenori Ohtake, Eisuke Tokumitsu, Hiroshi Ishiwara
Journal of the Korean Physical Society, 32, -, 1998

Annealing effect of the CeO2 buffer layers for PZT/CeO2/Si(111) structures
Byung Eun Park, Shogo Imada, Eisuke Tokumitsu, Hiroshi Ishiwara
Journal of the Korean Physical Society, 32, -, 1998

Epitaxial growth of ferroelectric YMnO3 thin films on Si (111) substrates by molecular beam epitaxy
S Imada, S Shouriki, E Tokumitsu, H Ishiwara
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 37, 12A, 6497-6501, 1998

Fabrication of PbZrxTi1-xO3 films on Si structures using Y2O3 buffer layers
BE Park, S Shouriki, E Tokumitsu, H Ishiwara
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 37, 9B, 5145-5149, 1998

Electrical properties of La0.7Sr0.3CoO3/Pb(Zr0.52Ti0.48)O-3/La0.7Sr0.3CoO3 thin film capacitors formed on MgO substrates using the sol-gel method
SM Yoon, E Tokumitsu, H Ishiwara
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 37, 8A, L936-L938, 1998

Electrical characteristics of neuron oscillation circuits composed of MOSFETs and complementary unijunction transistors
SM Yoon, Y Kurita, E Tokumitsu, H Ishiwara
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 37, 3B, 1110-1115, 1998

Annealing effect of the CeO2 buffer layers for PZT/CeO2/Si(111) structures
BE Park, S Imada, E Tokumitsu, H Ishiwara
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 32, S1390-S1392, 1998

C-V characteristics of Al/BaMgF4/Si(111) diodes fabricated by dry etching process
K Aizawa, S Ohtake, E Tokumitsu, H Ishiwara
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 32, S1192-S1194, 1998

Annealing effect of the CeO2 buffer layers for PZT/CeO2/Si(111) structures
BE Park, S Imada, E Tokumitsu, H Ishiwara
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 32, S1390-S1392, 1998

C-V characteristics of Al/BaMgF4/Si(111) diodes fabricated by dry etching process
K Aizawa, S Ohtake, E Tokumitsu, H Ishiwara
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 32, S1192-S1194, 1998

Numerical analysis of metal-ferroelectricsemiconductor field-effect-transistors (MFS-FETs) considering inhomogeneous ferroelectric polarization
Tatsuya Kamei, Eisuke Tokumitsu, Hiroshi Ishiwara
IEICE Transactions on Electronics, E81-C, 4, 577-583, 1998

Electrical properties of MFS-FETs using SrBi2Ta2O9 films directly grown on Si substrates by sol-gel method
E Tokumitsu, G Fujii, H Ishiwara
FERROELECTRIC THIN FILMS VI, 493, 459-464, 1998

Ferroelectric neuron circuits with adaptive-learning function
H Ishiwara, Y Aoyama, S Okada, C Shimamura, E Tokumitsu
COMPUTERS & ELECTRICAL ENGINEERING, 23, 6, 431-438, 1997

Preparation of PbZrxTi1-xO3/La1-xSrxCoO3 heterostructures using the sol-gel method and their electrical properties
SM Yoon, E Tokumitsu, H Ishiwara
APPLIED SURFACE SCIENCE, 117, 447-452, 1997

Electrical properties of ferroelectric BaMgF4 films grown on GaAs substrates using AlGaAs buffer layer
T Hayashi, M Yoshihara, S Ohmi, E Tokumitsu, H Ishiwara
APPLIED SURFACE SCIENCE, 117, 418-422, 1997

Hysteresis characteristics of vacuum-evaporated ferroelectric PbZr0.4Ti0.6O3 films on Si(111) substrates using CeO2 buffer layers
BE Park, Sakai, I, E Tokumitsu, H Ishiwara
APPLIED SURFACE SCIENCE, 117, 423-428, 1997

Nonvolatile memory operations of metal-ferroelectric-insulator-semiconductor (MFIS) FET's using PLZT/STO/Si(100) structures
E Tokumitsu, R Nakamura, H Ishiwara
IEEE ELECTRON DEVICE LETTERS, 18, 4, 160-162, 1997

Proposal of a single-transistor-cell-type ferroelectric memory using an SOI structure and experimental study on the interference problem in the write operation
H Ishiwara, T Shimamura, E Tokumitsu
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 36, 3B, 1655-1658, 1997

Growth and crystallinity of ferroelectric BaMgF4 films on (111)-oriented Pt films
K Aizawa, M Moriwaki, T Ichiki, E Tokumitsu, H Ishiwara
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 36, 2B, L234-L237, 1997

Electrical properties of ferroelectric-capacitor-gate Si MOS transistors using P(L)ZT films
E Tokumitsu, T Shimamura, H Ishiwara
INTEGRATED FERROELECTRICS, 15, 1-4, 137-144, 1997

Fabrication and characterization of metal-ferroelectrics-semiconductor field effect transistor using epitaxial BaMgF4 films grown on Si(111) substrates
K Aizawa, T Okamoto, E Tokumitsu, H Ishihwara
INTEGRATED FERROELECTRICS, 15, 1-4, 245-252, 1997

Ferroelectric properties and crystalline structures of BaMgF4 thin films grown on Pt(111)/SiO2/Si(100)
M Moriwaki, K Aizawa, E Tokumitsu, H Ishiwara
POLYCRYSTALLINE THIN FILMS - STRUCTURE, TEXTURE, PROPERTIES AND APPLICATIONS III, 472, 75-80, 1997

Fabrications of ferroelectric-gate field-effect-transistors using P(L)ZT films
Eisuke Tokumitsu, Ryo Ichi Nakamura, Hiroshi Ishiwara
Journal of the Korean Physical Society, 29, -, 1996

Non-Volatile Metal-Ferroelectric-Insulator-Semiconductor(MFIS)FETs Using PLZT/STO/Si(100) Structures
TOKUMITSU Eisuke, NAKAMURA Ryo-ichi, ISHIWARA Hiroshi
Extended abstracts of the ... Conference on Solid State Devices and Materials, 1996, 845-847, 1996

Electrical properties of ferroelectric gate HEMT structures
S Ohmi, M Yoshihara, T Okamoto, E Tokumitsu, H Ishiwara
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 35, 2B, 1254-1257, 1996

Ferroelectric properties of BaMgF4 films grown on Si(100), (111), and Pt(111)/SiO2/Si(100) structures
K Aizawa, T Ichiki, T Okamoto, E Tokumitsu, H Ishiwara
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 35, 2B, 1525-1530, 1996

Formation of high-dielectric oxide films on SrVO3-x Si substrates
B. K. Moon, E. Tokumitsu, H. Ishiwara
Materials Science and Engineering B, 41, 1, 157-160, 1996

Fabrication of MFIS-FETs using PLZT/STO/Si(100) structures
E Tokumitsu, R Nakamura, H Ishiwara
ISAF '96 - PROCEEDINGS OF THE TENTH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2, 1, 107-110, 1996

Device characterization of high-electron-mobility transistors with ferroelectric-gate structures
S Ohmi, T Okamoto, M Tagami, E Tokumitsu, H Ishiwara
GAAS IC SYMPOSIUM - 18TH ANNUAL, TECHNICAL DIGEST 1996, 163-166, 1996

Electrical Properties of Ferroelectric Gate HEMT Structures
OHMI Shun-ichiro, YOSHIHARA Makoto, OKAMOTO Takeo, TOKUMITSU Eisuke, ISHIWARA Hiroshi
Extended abstracts of the ... Conference on Solid State Devices and Materials, 1995, 956-958, 1995

CHARACTERIZATION OF FERROELECTRIC BAMGF4 FILMS GROWN ON ALGAAS/GAAS(100) HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES
SI OHMI, E TOKUMITSU, H ISHIWARA
JOURNAL OF CRYSTAL GROWTH, 150, 1-4, 1104-1107, 1995

Film quality dependence of adaptive-learning processes in neurodevices using ferroelectric pbzrxti1-xo3(Pzt) films
Eisuke Tokumitsu, Ryo-Ichi Nakamura, Kensuke Itani, Hiroshi Ishiwara
Japanese Journal of Applied Physics, 34, 2S, 1061-1065, 1995

Characterization of ferroelectric BaMgF4 films grown on AlGaAs/GaAs (100) high-electron-mobility transistor structures
Shun-ichiro Ohmi, Eisuke Tokumitsu, Hiroshi Ishiwara
Journal of Crystal Growth, 150, 1104-1107, 1995

Preparation of PbZrxTi1-xO3 films on Si substrates using SrTiO3 buffer layers
E TOKUMITSU, K ITANI, BK MOON, H ISHIWARA
FERROELECTRIC THIN FILMS IV, 361, 427-432, 1995

Characterization of ferroelectric BaMgF4 films grown on AlGaAs/GaAs(100) high-electron-mobility transistor structures
Shun-ichiro Ohmi, Eisuke Tokumitsu, Hiroshi Ishiwara
Journal of Crystal Growth, 150, 1104-1107, 1995

Contactless measurement of electron mobility in ferroelectric gate high-electron-mobility transistor structures
Shun-Ichiro Ohmi, Eisuke Tokumitsu, Hiroshi Ishiwara
Japanese Journal of Applied Physics, 34, 5, L603-L605, 1995

Crystalline quality and electrical properties of pbzrxti1-xo3 thin films prepared on srtio3-covered si substrates
Eisuke Tokumitsu, Itani Kensuke, Bum-Ki Moon, Hiroshi Ishiwara
Japanese Journal of Applied Physics, 34, 9, 5202-5206, 1995

CHARACTERIZATION OF PB(ZRXTI1-X)O-3 FILMS PREPARED BY VACUUM EVAPORATION METHOD
E TOKUMITSU, S UENO, RI NAKAMURA, H ISHIWARA
INTEGRATED FERROELECTRICS, 7, 1-4, 215-223, 1995

STUDY ON GRADUAL REVERSAL OF POLARIZATION IN FERROELECTRIC PZT THIN-FILMS FOR ADAPTIVE-LEARNING MFSFET APPLICATIONS
N TANISAKE, K ITANI, KH KIM, E TOKUMITSU, H ISHIWARA
INTEGRATED FERROELECTRICS, 6, 1-4, 69-80, 1995

RAMAN-SCATTERING BY LO PHONON PLASMON COUPLED-MODE IN HEAVILY CARBON-DOPED P-TYPE INGAAS
M QI, JS LUO, J SHIRAKASHI, E TOKIUMITSU, S NOZAKI, M KONAGAI, K TAKAHASHI
PHYSICS AND APPLICATIONS OF DEFECTS IN ADVANCED SEMICONDUCTORS, 325, 229-234, 1994

Partial switching kinetics of ferroelectric PhZrxTi1–xo3 thin films prepared by sol-gel technique
Eisuke Tokumitsu, Noriaki Tanisake, Hiroshi Ishiwara
Japanese Journal of Applied Physics, 33, 9 S, 5201-5206, 1994

MOMBE growth of carbon doped p-type GaAs and InGaAs
Ming Qi, S. Nozaki, M. Konagai, K. Takahashi, J. Shirakashi, E. Tokumitsu, Jinsheng Luo
Wuli Xuebao/Acta Physica Sinica, 42, 1956-1962, 1993

Raman scattering study of LO phonon-plasmon coupled mode in heavily carbon doped p-type GaAs
Ming Qi, Jinsheng Luo, J. Shirakashi, S. Nozaki, K. Takahashi, E. Tokumitsu, M. Konagai
Wuli Xuebao/Acta Physica Sinica, 42, 963-968, 1993

Heavily carbon doped p-type GaAs/InxGa1-xAs strained-layer superlattices grown by MOMBE
Ming Qi, Jinsheng Luo, J. Shirakashi, T. Yamada, S. Nozaki, K. Tadahashi, H. Kashima, E. Tokumitsu, M. Konagai
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 14, 462-467, 1993

Growth and characteristics of carbon doped InxGa1-xAs by MOMBE
Ming Qi, Jinsheng Luo, J. Shirakashi, T. Yamada, S. Nozaki, K. Takahashi, E. Tokumitsu, M. Konagai
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 14, 402-409, 1993

CARBON DOPING IN MOLECULAR-BEAM EPITAXIAL (MBE) GROWTH OF GAAS USING NEOPENTANE AS A NOVEL CARBON SOURCE
E TOKUMITSU, M SHIRAHAMA, K NAGAO, S NOZAKI, M KONAGAI, K TAKAHASHI
JOURNAL OF CRYSTAL GROWTH, 127, 1-4, 711-715, 1993

Carbon δ-doping in gaas by metal-organic molecular beam e
Takumi Yamada, Masanori Shirahama, Eisuke Tokumitsu, Makoto Konagai, Kiyoshi Takahashi
Japanese Journal of Applied Physics, 32, 8 B, L1123-L1125, 1993

Characterization of carbon-doped gaas grown by molecular beam epitaxy using neopentane as carbon source
Masanori Shirahama, Keisuke Nagao, Eisuke Tokumitsu, Makoto Konagai, Kiyoshi Takahashi
Japanese Journal of Applied Physics, 32, 12 R, 5473-5478, 1993

Study on thermal stability of carbon-doped GaAs using novel metalorganic molecular beam epitaxial structures
Shinji Nozaki, Kiyoshi Takahashi, Masanori Shirahama, Keisuke Nagao, Junichi Shirakashi, Eisuke Tokumitsu, Makoto Konagai
Applied Physics Letters, 62, 16, 1913-1915, 1993

Enhanced carbon incorporation in InGaAs grown at low temperature by metalorganic molecular beam epitaxy (MOMBE)
Jun ichi Shirakashi, Eisuke Tokumitsu, Makoto Konagai, Akifumi Miyano, Ricard T. Yoshioka, Shinji Nozaki, Kiyoshi Takahashi
Conference on Solid State Devices and Materials, 705-706, 1992

HEAVILY CARBON-DOPED P-TYPE INGAAS BY MOMBE
E TOKUMITSU, J SHIRAKASHI, M QI, T YAMADA, S NOZAKI, M KONAGAI, K TAKAHASHI
JOURNAL OF CRYSTAL GROWTH, 120, 1-4, 301-305, 1992

Effect of zinc diffusion on impurity profiles of carbon- and beryllium-doped thin GaAs layers grown by chemical beam epitaxy
E. Tokumitsu, T. H. Chiu, H. S. Luftman, N. T. Ha
Journal of Applied Physics, 69, 8426-8428, 1991

EXTREMELY LOW NONALLOYED SPECIFIC CONTACT RESISTANCE RHO-C (10(-8) OMEGA CM(2)) TO METALORGANIC MOLECULAR-BEAM EPITAXY GROWN SUPER HEAVILY HEAVILY C-DOPED (10(21) CM(-3))RHO++GAAS
T USAGAWA, M KOBAYASHI, T MISHIMA, PD RABINZOHN, A IHARA, M KAWATA, T YAMADA, E TOKUMITSU, M KONAGAI, K TAKAHASHI
JOURNAL OF APPLIED PHYSICS, 69, 12, 8227-8232, 1991

GaAs pseudo-heterojunction bipolar transistor with a heavily carbon-doped base
Shinji Nozaki, Ryuji Miyake, Junichi Shirakashi, Ming Qi, Takumi Yamada, Eisuke Tokumitsu, Makoto Konagai, Kiyoshi Takahashi, Kazuhiko Matsumoto
Conference on Solid State Devices and Materials, 356-358, 1991

A Monolithic Long Wavelength Photoreceiver Using Heterojunction Bipolar Transistors
S. Chandrasekhar, Bart C. Johnson, Eisuke Tokumitsu, Andrew G. Dentai, Charles H. Joyner, Alan H. Gnauck, Joseph S. Perino, G. J. Qua
IEEE Journal of Quantum Electronics, 27, 773-777, 1991

P-type carbon-doped ingaas grown by metalorganic molecular beam epitaxy
Jun-Ichi Shirakashi, Takumi Yamada, Ming Qi, Shinji Nozaki, Kiyoshi Takahashi, Eisuke Tokumitsu, Makoto Konagai
Japanese Journal of Applied Physics, 30, 9, L1609-L1611, 1991

Gaas pseudo-heterojunction bipolar transistor with a heavily carbon-doped base
Shinji Nozaki1, Koki Saito2, Junichi Shirakashi1, Ming Qi1, Takumi Yamada 1, Eisuke Tokumitsu3, Makoto Konagai2, Kiyoshi Takahashi 1, Kazuhiko Matsumoto4
Japanese Journal of Applied Physics, 30, 12, 3840-3842, 1991

INP/INGAAS DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY WITH SULFUR-DELTA DOPING IN THE COLLECTOR REGION
E TOKUMITSU, AG DENTAI, CH JOYNER, S CHANDRASEKHAR
APPLIED PHYSICS LETTERS, 57, 26, 2841-2843, 1990

METALLIC P-TYPE GAAS AND INGAAS GROWN BY MOMBE
M KONAGAI, T YAMADA, T AKATSUKA, S NOZAKI, R MIYAKE, K SAITO, T FUKAMACHI, E TOKUMITSU, K TAKAHASHI
JOURNAL OF CRYSTAL GROWTH, 105, 1-4, 359-365, 1990

CORRELATION BETWEEN FERMI LEVEL STABILIZATION POSITIONS AND MAXIMUM FREE CARRIER CONCENTRATIONS IN III-V COMPOUND SEMICONDUCTORS
E TOKUMITSU
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 29, 5, L698-L701, 1990

An In0P/InGaAs p-i-n/HBT Monolithic Transimpedance Photoreceiver
S. Chandrasekhar, B. C. Johnson, M. Bonnemason, E. Tokumitsu, A. H. Gnauck, A. G. Dentai, C. H. Joyner, J. S. Perino, G. J. Qua, E. M. Monberg
IEEE Photonics Technology Letters, 2, 505-506, 1990

Correlation between fermi level stabilization positions and maximum free carrier concentrations in iii–v compound semiconductors
Eisuke Tokumitsu
Japanese Journal of Applied Physics, 29, -, 1990

INTEGRATED INP/INGAAS HBT PREAMPLIFIER FOR AN OPTICAL RECEIVER
S CHANDRASEKHAR, BC JOHNSON, E TOKUMITSU, AG DENTAI, CH JOYNER, AH GNAUCK, JS PERINO, GJ QUA, CA BURRUS
SECOND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 171-174, 1990

METALLIC P-TYPE GAAS AND GAALAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY
M KONAGAI, T YAMADA, T AKATSUKA, K SAITO, E TOKUMITSU, K TAKAHASHI
JOURNAL OF CRYSTAL GROWTH, 98, 1-2, 167-173, 1989

GaInAs/InP Pseudo-Heterojunction Bipolar Transistors Grown by Movpe
E. Tokumitsu, A. G. Dentai, C. H. Joyne
Electronics Letters, 25, 1539-1540, 1989

HEAVILY CARBON DOPED PARA-TYPE GAAS AND GAALAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY
T YAMADA, E TOKUMITSU, K SAITO, T AKATSUKA, M MIYAUCHI, M KONAGAI, K TAKAHASHI
JOURNAL OF CRYSTAL GROWTH, 95, 1-4, 145-149, 1989

Reduction of the Surface Recombination Current in InGaAs/InP Pseudo-Heterojunction Bipolar Transistors Using a Thin InP Passivation Layer
E. Tokumitsu, Andrew G. Dentai, C. H. Joyne
IEEE Electron Device Letters, 10, 585-587, 1989

Effect of heavy doping on band gap and minority carrier transport of AlGaAs/GaAs HBT’s
Koki Saito, Takumi Yamada, Takeshi Akatsuka, Taichi Fukamachi, Eisuke Tokumitsu, Makoto Konagai, Kiyoshi Takahashi
Japanese Journal of Applied Physics, 28, 11 A, L2081-L2084, 1989

Photo-metalorganic molecular-beam epitaxy: A new epitaxial growth technique
Eisuke Tokumitsu, Takumi Yamada, Makoto Konagai, Kiyoshi Takahashi
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 7, 3, 706-710, 1989

Characterization of p-type GaAs heavily doped with carbon grown by metalorganic molecular-beam epitaxy
Koki Saito, Eisuke Tokumitsu, Takeshi Akatsuka, Motoya Miyauchi, Takumi Yamada, Makoto Konagai, Kiyoshi Takahashi
Journal of Applied Physics, 64, 8, 3975-3979, 1988

SUPERLATTICE STRUCTURES GROWN BY METALORGANIC MBE
E TOKUMITSU, T KATOH, CP SUNG, A SANDHU, R KIMURA, M KONAGAI, K TAKAHASHI
SURFACE SCIENCE, 174, 1-3, 43-47, 1986

Preparation of GaAs and ga1- xalxas multi-layer structures by metalorganic molecular beam epitaxy
Eisuke Tokumitsu, Toshiaki Katoh, Ryuhei Kimura, Makoto Konagai, Kiyoshi Takahashi
Japanese Journal of Applied Physics, 25, 8, 1211-1215, 1986

METALORGANIC MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF GAAS USING TRIMETHYL-GALLIUM AND TRIETHYL-GALLIUM SOURCES
E TOKUMITSU, Y KUDOU, M KONAGAI, K TAKAHASHI
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 24, 9, 1189-1192, 1985

CRYSTAL GROWTH OF GaAs BY METALLORGANIC MOLECULAR BEAM EPITAXY USING TRIMETHYLGALLIUM AND TRIETHYLGALLIUM.
Yoshimitsu Kudou, Eisuke Tokumitsu, Makoto Konagai, Kiyoshi Takahashi
Conference on Solid State Devices and Materials, 687-690, 1984

MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS USING TRIMETHYLGALLIUM AS A GA SOURCE
E TOKUMITSU, Y KUDOU, M KONAGAI, K TAKAHASHI
JOURNAL OF APPLIED PHYSICS, 55, 8, 3163-3165, 1984

CRYSTAL GROWTH OF GaAs USING TRIMETHYLGALLIUM (TMG) AS A Ga SOURCE IN THE MBE SYSTEM.
Eisuke Tokumitsu, Yoshimitsu Kudo, Makoto Konagai, Kiyoshi Takahashi
Conference on Solid State Devices and Materials, 44-45, 1983

ALLOY SCATTERING POTENTIAL IN PARA-TYPE GA1-XALXAS
K MASU, E TOKUMITSU, M KONAGAI, K TAKAHASHI
JOURNAL OF APPLIED PHYSICS, 54, 10, 5785-5792, 1983