Coating properties of chemical solution processed MoS2 thin films on various oxides
2017 European Materials Research Society (E-MRS) Spring Meeting, Strasbourg, France, May 22-26, 2017. paper Q.PM.4, 2017
Chemical Solution Process of In-Based Oxides and MoS2 for Thin Film Transistors
The 6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017), June 18-321, 2017, Fukui, paper PA2-1-1, 2017
Direct Imprinting of Oxide Precursor Gel for New Fabrication Process of Thin Film Transistors
The 6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017), June 18-321, 2017, Fukui, paper PO3-47, 2017
Investigation of Nb-Zr-O thin film using sol-gel coating
82016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2016), paper B3-3(oral) July 4 - 6, 2016Hakodate Kokusai Hotel, Hakodate, Japan, 2017
Fabrication of MoS2 thin films on oxide-dielectric-covered substrates
Compound Semiconductor Week, June 26-30, 2016 Toyama International Conference Center, Toyama paper MoP-ISCS-121, 2017
強誘電体の特異物性と強誘電体ゲートデバイスの展望
電子情報通信学会2017年総合大会、エレクトロニクスソサイエティープレナリーセッション（CK-1） 2017年3月22～25日、名城大学 天白キャンパス（名古屋市）, 2017
溶液プロセスによるMoS2の作製と薄膜トランジスタ応用に関する研究
第64回応用物理学会春季学術講演会、16a-F203-10、パシフィコ横浜、2017年3月14日～17日, 2017
Chemical solution processed MoS2 on high-k oxide film
77回応用物理学会秋季学術講演会、13p-A37-2、朱鷺メッセ、2016-9.13-16, 2016., 2017
“Ferroelectric-gate Thin Film Transistors with Oxide Channel for Nonvolatile Memory Applications”
2nd Anuunal World Congress of Smart Materials (WCSM2016), March 4-6, 2016, Singapore., 2016
Memory Cell Array using Indium-Tin-Oxide Channel Ferroelectric-Gate Thin Film Transistors
16th Non-Volatile Memory Technology Symposium (NVMTS 2016) , Oct. 17 ｨC19, 2016, Pittsburgh, Pennsylvania, USAﾕﾐ, 2016
Simultaneous formation of channel and source/drain regions by nano-rheology printing in ITO-based thin film transistors
EMRS Spring Meeting, Lille, May 11-15, 2015, 2015
Characterization of sol-gel derived Nb doped ZrO2 thin film
第63回応用物理学会春季学術講演会、2016年3月19日～22日、東京 19p-P3-3, 2015
Oxide-Channel Ferroelectric-Gate Thin Film Transistors Prepared by Solution Process
22nd International Display Workshop (IDW 2015), Dec.9-11, Otsu, Japan, Paper AMD6-1., 2015
Characterization of solution processed thin film MoS2 on oxide dielectric
5th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2015), June 16-19, 2015, Niigata, Japan., 2015
Crystallization Mechanism and Crystallographic Orientation Control of (Bi,La)4Ti3O12 (BLT) Films by Sol-gel technique
13th European Meeting on Ferroelectricity (EMF 2015), Porto, June 28-July 3, 2015 oral, 2015
Ferroelectric-gate Thin Film Transistors with Oxide Channel for Nonvolatile Memory Applications
BIT’s 2nd Annual World Congress of Smart Materials-2016, March 4-6, 2016, Singapore, 2015
A Direct Imprinting for Fine Metal Oxide Patterns and Devices
13th International Conference on Nanoimprint and Nanoprint Technology (NNT 2014) (Invited) ,October 22-24, 2014, Kyoto, Japan, 2014
Amorphous LaRuO Nano-patterningusing Rheology Printing Method
13th International Conference on Nanoimprint and Nanoprint Technology (NNT 2014) ,October 22-24, 2014, ANA Crowne Plaza Kyoto, Kyoto, Japan., Kyoto, Japan, 2014
レオロジープリンティング法によるLaRuOナノパターンの作製
第75回応用物理学会秋季学術講演会, 北海道大学, 2014年9月17-20日, 北海道大学, 2014
Electrical characterization of gate modulation in graphene/n-SiC contacts
5th International conference on Recent Progress in Graphene Research, Tokyo, 2014
溶液プロセスによる酸化物チャネル強誘電体ゲートトランジスタの作製
応用物理学会北陸・信越支部シンポジウム、第2回有機・無機エレクトロニクスシンポジウム, 信州大学工学部, 2014
Fabrication of Metal Oxide Thin Films and Transistors by Solution Process
AWAD2014(2014 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices), Kanazawa Bunka Hall, Kanazawa, Japan,, 2014
酸化物チャネル強誘電体ゲート薄膜トランジスタのソース・ドレイン構造とスイッチング特性
第31回強誘電体応用会議 (FMA31), コープイン京都, 2014
Nano-Rheology Printing(nRP): A Direct Printing Technique for Well-Defined metal Oxide Patterns and Devices
2014 Spring Meeting, European Materials Research Society(E-MRS), Lille, France,, 2014
Novel Materials and Processing for Printed Metal Oxide Devices
2014 Spring Meeting, European Materials Research Society(E-MRS), Lille, France,, 2014
Nano-Rheology Printing (nRP): A Direct Printing Technique for Well-Defined Metal Oxide Patterns and Devices
EMRS 2014 Spring Meeting, Symposium I.11.2, Lille, France, May 26th - 30th 2014., Lille, France, 2014
Novel Materials and Processing for Printed Metal Oxide Devices
EMRS 2014 Spring Meeting, Symposium I.P1.28(Invited) , Lille, France, May 26th - 30th 2014., Lille, France, 2014
Rheological Properties of the ITO Gel and Its Application for Forming Nano-Patterns by Imprinting
2014 Spring meeting & Exhibit, Materials Research Society,, San Francisco,, 2014
Fabrication of Oxide Thin-Film Transistors Using the Newly Developed Rheology Printing Method
2014 Spring meeting & Exhibit, Materials Research Society,, San Francisco, 2014
Fabrication of Oxide Thin-Film Transistors using the Newly Developed Rheology Printing Method
2014 MRS Spring Meeting, San Francisco, April 21-25, 2014., San Francisco, California ,USA, 2014
Rheological properties of the ITO gel and its application for forming nano-patterns by imprinting
2014 MRS Spring Meeting, San Francisco, April 21-25, 2014, San Francisco, California,USA, 2014
溶液プロセスから作成した酸化物チャネル強誘電体ゲートトランジスタ
電子情報通信学会電子デバイス研究専門委員会（ED研）特別ワークショップ「酸化物材料：その多彩なデバイス応用, 首都大学東京 秋葉原サテライトキャンパス, 2014
Characterization of In2O3 Channel Ferroelectric-Gate Thin Film Transistors
International Thin-FilmTransistor Conference(ITC 2014),, Delft, the Netherlands, 2014
, “Fabrication of 4H-SiC MOSFETs Using Stacked Al2O3 Gate Insulator with Pre-Annealed Al2O3 Buffer Layer”, The International Conference on Silicon Carbide and Related Materials 2013
Miyazaki, Japan, Sep.29-Oct.4, 2013, 2014
SiC上グラフェンチャネルトランジスタの単極性動作と高オン／オフ比実現に向けた試み（Ⅱ）
SiC及び関連半導体研究会第２２回講演会, 埼玉会館, 2013
Ferroelectric-gate oxide channel thin film transistors fabricated by solution process
International Electron Devices and Materials Symposium, Nantou, Taiwan, 2013
Fundamental Study on Thermal Nanoimprint Process for Oxide-channel Thin Film Transistor Fabrication
Nanoinprint and Nanoprint Technology(the 12th International Conference on NNT 2013), Barcerona, Spain, 2013
Ferroelectric-gate thin film transistors with bottom contact structure
International Conference on Semiconductor Technology for Ultra Large Scale, Integrated Circuits and Thin Film Transistors, Engineering Conferences International, Grenoble, France, July 8-11, 2013
Use of low-temperature-deposited high-k gate insulators for SiC power MOSFETs
Collaborative Conference on 3D & Materials Research (CC3DMR) 2013, 492, Ramada Jeju, Korea, 24-28 June(発表26 June), 2013, 2013
120 nm Channel Length Ferroelectric-Gate Thin Film Transistor by Nanoimprint Lithography
”, The 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2013), B4-4, Kanazawa, 17-20 June 2013, 2013
All Solution-Processed Amorphous Oxide Thin Film Transistors via UV/O3 Treatment
The 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2013), A3-2, Kanazawa, 17-20 June (発表18 June), 2013, 2013
Observation of High on/off Drain Current Ratio in Graphene Transistors with n-type doped SiC Source/Drain Regions
Graphene Week 2013, GW2013-142, TuP-27, Chemnitz, Germany, 2-7 June 2013, 2013
Asymmetry of switching time in oxide-channel ferroelectric-gate thin film transistors
E-MRS 2013 SPRING MEETING, Congress Center, Strasbourg, France, May 27-31 2013, 2013
a-In-Ga-Zn-O チャネル強誘電体ゲート薄膜トランジスタの作製
第30回強誘電体応用会議(fma30)、コープイン京都、22-T-06、pp.25、5/22-25(発表22日)、2013, 2013
窒化膜バッファ層と低温堆積Al2O3膜によるSiC-MOS構造の高温プロセス耐性
SiC及び関連ワイドギャップ半導体研究会第２１回講演会、大阪市中央公会堂、p-51、12/19-20、2012, 2013
低温堆積Al2O3をゲート絶縁膜に用いたSiC MOSFETにおける堆積後アニールの影響
SiC及び関連ワイドギャップ半導体研究会第２１回講演会、大阪市中央公会堂、p-46、12/19-20、2012, 2013
応用電子物性分科会70周年によせて ――応電の思い出と機能性酸化物デバイス研究
第60回応用物理学会春季学術講演会、28p-G14-3、神奈川工科大学、2013-3.27-30, 2013
Oxide-channel thin film transistors using ferroelectric and high-k gate insulators
International Union of Materials Research Societies-International Conference on Electronic Materials 2012(IUMRS-ICEM2012), Yokohama, 2012
Comparative Study of Metalorganic Chemical Vapour Deposition of HfO2 and Al2O3 Gate Insulators on SiC for Power MOSFET Applications
WoDiM 2012(17th Workshop on Dielectrics in Microelectronics),, Dresden, Germany, 2012
Switching properties of ferroelectric P(VDF-TrFE) films fabricated on oxide electrodes
E-MRS 2012, Spring Meeting, Strasbourg, France,, 2012
Fabrication and Characterization of An-Sn-O series oxide thin film transistors
ITC 2012(8th International Thin-Film Transistor Conference),, Lisbon, Portugal,, 2012
ＳｉＣ上グラフェンチャネルトランジスタの単極性動作と高オン／オフ比実現に向けた試み
SiC及び関連ワイドギャップ半導体研究会第２０回講演会, 愛知県産業労働センター（ウインクあいち）, 2011
High performance Bi-Nb-Ox thin-film capacitors fabricated by chemical solution deposition process
2011 Fall meeting, Materials Research Society, Boston, USA, 2011
Solution-processed oxide thin-film transistors using La-Ta-O/Bi-Nb-O stacked gate insulator
2011 Fall meeting, Materials Research Society, Boston, USA, 2011
P-type Amorphous Oxide Semiconductors Ln-Ru-O from Solution Processing
2011 Fall meeting, Materials Research Society, Boston, USA, 2011
様々な液体原料を用いた In-Zn-O 薄膜の形成と薄膜トランジスタ応用
薄膜材料デバイス研究会 第８回研究集会, 京都, 2011
Nano-sized PT Lines and Spaces Patterned by Nanoimprint Lithography and physical Dry-etching Method
The 10th international conference on Nanoimprint and Nanoprint Technology (NNT 2011), The Shilla Jeju, Korea, 2011
Data Disturbance-free NAND-type Ferroelectric-gate Thin Film Transistor Array using Sol-gel ITO and Stacked (BLT/PZT) Gate Insulator
2011 International Conference on Solid State Devices and Materials (SSDM 2011), Nagoya, Sep. 28-30, 2011, 2011
Suppression of Hole Current in Graphene Transistors with n-Type Doped SiC Source/Drain Regions
International Conference on Silicon Carbide and \related Materials (ICSCRM 2011), Mo-P-46, pp.112, Clevelend, Ohio, Sep.11-16, 2011, 2011
Al2O3/4H-SiC MOSFETs Fabricated with High-Temperature Nitridation Process
International Conference on Silicon Carbide and Related Materials (ICSCRM) 2011, We-P-31, pp.320, Clevelend, Ohio, Sep.11-16, 2011, 2011
SUB-MICRON FERROELECTRIC-GATE THIN FILM TRANSISTOR USING SOL-GEL ITO CHANNEL AND STACKED (BLT/PZT) INSULATOR
International Symposium on Intergrated Functionalities(ISIF 2011), Cambridge, July 31-Aug. 4, 2011, 2011
Switching Characteristics of In2O3/(Bi,La)4Ti3O12 Ferroelectric-Gate Thin Film Transistors
EMF 2011(12th European Meeting on Ferroelectricity), 5F-1O, Bordeaux Univ., June 26 - July 1, 2011, 2011
Lanthanum Oxide Capping Layer for Solution-processed Ferroelectric-gate Thin-film Transistors
2011 Spring meeting, Materials Research Society, San Francisco, April 25-29, 2011, 2011
Analysis on Interface Layer Between Pt Electrode and Ferroelectric Layer of Solution-processed PZT Capacitor
2011 Spring meeting, Materials Research Society, San Francisco, April 25-29, 2011, 2011
In2O3 & IZO Channel Thin-Film Transistors Prepared by Chemical Solution Process
7th International Thin-Film Transistor Conference (ITC2011), Cambridge, UK, March 3-4, 2011, 2011
Fabrication and Characterization of a Ferroelectric-Gate FET with a ITO/PZT/SRO/Pt Stacked Structure
22nd International Conference on Microelectronics (ICM 2010), Cairo, Dec.19-22, 2010, 2011
Fabrication of Organic P(VDF-TrFE) Film on PEN Substrate or Flexible IGZO-channel Ferroelectric-gate TFTs
2010 Fall meeting, Materials Research Society, Boston, Nov.28-Dec.2, 2010, 2011
Flexible Ferroelectric-TFTs Using IGZO-Channel and P(VDF-TrFE)
The 17th International Display Workshops(IDW’10), Fukuoka, Dec.1-3, 2010, 2011
FABRICATION OF GRAPHEN CHANNEL TRANSISTOR WITH HEAVILY DOPED SiC SOURCE/DRAIN REGIONS
International Symposium on Graphene Devices (ISGD) 2010 Symposium, Sendai, Oct.27-29, 2010, 2011
H(CH3)2Alを用いたMOCVD法SiC基板上へのAl2O3膜の形成とAl2O3/SiC MOSFETの電気的特性評価
第７２回応用物理学会学術講演会、31a-ZB-6、山形大学小白川キャンパス、2011, 2011
Low voltage operation of ferroelectricthin film transistors using P8VDF-TrFE) and IGZO
第７２回応用物理学会学術講演会、31p-C-7、山形大学小白川キャンパス、2011-8, 2011
In2O3をチャネルに用いた強誘電体ゲートTFTの電気的特性
第58回応用物理学関係連合講演会、神奈川工科大学、2011年3月24日-27日, 2011
MOCVD法によるSiC上へのHfO2膜の堆積とHfO2/SiO2/4H-SiC MOSFETの作製
第58回応用物理学関係連合講演会、神奈川工科大学、 2011年3月24日-27日, 2011
高温窒化処理とAl2O3堆積膜を用いた4H-SiC MOSFETの作製と評価
第58回応用物理学関係連合講演会、神奈川工科大学、 2011年3月24日-27日, 2011
n型ドープしたSiCをソース/ドレインに用いたグラフェンチャネルトランジスタの作製とその評価
第58回応用物理学関係連合講演会、神奈川工科大学、 2011年3月24日-27日, 2011
液体プロセスによるIn2O3及びIn-Zn-O(IZO)チャネル薄膜トランジスタの形成
第58回応用物理学関係連合講演会、神奈川工科大学、 2011年3月24日-27日, 2011
スパッタ法によるAl-Zn-Sn-O チャネルＴＦＴの作製
薄膜材料デバイス研究会、第７回研究集会、6P34、奈良１００年会館、11/5-6、2010, 2011
Al2O3堆積膜をゲート絶縁膜に用いたSiC-MOSFETの作製と評価
応用物理学会シリコンテクノロジー分科会第１37回研究集会、電子情報通信学会シリコン材料デバイス研究会、信学技報IEICE Technical Report SDM2011-52(2011-7)、pp.11-15、名古屋大学、7/4、2011, 2011
液体プロセスによるIn2O3及びIn-Zn-O(IZO)薄膜の形成と酸化物チャネル薄膜トランジスタへの応用
薄膜材料デバイス研究会、第７回研究集会、5P33、奈良１００年会館、11/5-6、2010, 2011
高温窒化処理とAl2O3堆積膜を用いた４H-SiC MOSFETの作製と評価
SiC及び関連ワイドギャップ半導体研究会第１９回講演会、つくば国際会議場（エポカルつくば）10/21-22、2010, 2011
Low-Temperature Fabrication of Amorphous InGaZnO4 Thin-Film Transistors Utilizing Excimer
LaserInternational Workshop on Transparent Amorphous Oxide Semiconductors(TAOS 2010), 2010
ゾルゲル法による酸化物チャネル薄膜トランジスタの作製
第57回応用物理学関係連合会講演会, 2010
ナノ構造技術
第57回応用物理学関係連合会講演会特別企画シンポジウム, 2010
Fabrication of IGZO and In2O3-Channel Ferroelectric-Gate Thin Film Transistors
2010 MRS Spring meeting, Materials Research Society, 2010
有機強誘電体P(VDF-TrFE)と無機酸化物半導体IGZOを用いた強誘電体ゲート薄膜トランジスタの作製と評価
信学技報、SDM2010-16、OME2010-16(2010-04), 2010
Preparation of Bi-Zn-Nb-O(BZN)High-K Gate insulator by Sputtering for Oxide Channel Thin Film Transistors
16th Workshop on Dielectrics in Microelectronics(WoDiM 2010), 2010
Recent progress on ferroelectric-gate thin film trensistors with oxide channel
International Conference on Electronic Materials 2010 presented by International Union of Materials Research Societies (IUMRS-ICEM 2010), 2010
Flexible Ferroelectric-TFTs Using IGZO-Channel and P(VDF-TrFE)
The 17th International Display Workshops(IDW’10), 2010
Low-Temperature Fabrication of Amorphous InGaZnO4 Thin-Film Transistors Utilizing Excimer
LaserInternational Workshop on Transparent Amorphous Oxide Semiconductors(TAOS 2010), 2010
Fabrication of IGZO and In2O3-Channel Ferroelectric-Gate Thin Film Transistors
2010 MRS Spring meeting, Materials Research Society, 2010
Fabrication and Characterization of IGZO-channel ferroelectric-gate TFTs with P(VDF-TrFE) film
IEICE Technical Report、SDM2010-16、OME2010-16(2010-04), 2010
Preparation of Bi-Zn-Nb-O(BZN)High-K Gate insulator by Sputtering for Oxide Channel Thin Film Transistors
16th Workshop on Dielectrics in Microelectronics(WoDiM 2010), 2010
Recent progress on ferroelectric-gate thin film trensistors with oxide channel
International Conference on Electronic Materials 2010 presented by International Union of Materials Research Societies (IUMRS-ICEM 2010), 2010
Flexible Ferroelectric-TFTs Using IGZO-Channel and P(VDF-TrFE)
The 17th International Display Workshops(IDW’10), 2010
Transmission Electron Microscope Observation of ITO/(Bi,La)4Ti3O12 TFT Structures
International Thin Film Transistor Conference, 2009
Bi1.5Zn1.0b1.5O7をゲート絶縁膜に用いた酸化物チャネル薄膜トランジスタの作製
第５６回 応用物理学関係連合会講演会, 2009
エキシマレーザを用いたプラスチック基板上a-inGaZnO4 TFT特性の改善
第５６回 応用物理学関係連合会講演会, 2009
エキシマレーザを用いたプラスチック基板上ZnO TFT特性の改善
第５６回 応用物理学関係連合会講演会, 2009
Recent Progress and Future Prospects of Oxide-channel Ferroelectric-gate Thin Film Transistor with Large Charge Controllability
2009 Spring meeting, Materials Research Society, 2009
Fabrication of In-Ga-Zn-O channel thin film transistors with high-k and ferroelectric gate insulators
23rd International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 23), 2009
OPTIMIZATION OF Pt AND PZT FILMS FOR FERROELECTRIC-GATE THIN FILM TRANSISTORS
12th Inter. Meeting on Ferroelectricity & 18th IEEE Intern.Symposium on the Applications of Ferroelectrics (IMF-IASF-2009), 2009
Ferroelectric Behaviors of P(VDF-TrFE) Thin Films on Transparent ITO Electrode
2009
窒化処理とAL2O3堆積膜を用いた4H-SiC MOSFETの作製と評価
第70回 応用物理学会学術講演会, 2009
IGZOおよびIn2O3をチャネルに用いた強誘電体ゲートTFTの作製
薄膜材料デバイス研究会 第六回研究集会, 2009
ゾルゲル法によるITO及びIn2O3薄膜の形成と酸化物チャネル薄膜トランジスタへの応用
薄膜材料デバイス研究会 第六回研究集会, 2009
Fabrication of IGZO-channel Ferroelectric-gate TFTs with Organic P(VDF-TrFE) Film
2009 fall meeting, Materials Research Society, 2009
窒化処理とAl2O3堆積膜を用いた4H-SiC MOSFETの作製と評価
SiC及び関連ワイドギャップ半導体研究会第１８回講演会, 2009
Transmission Electron Microscope Observation of ITO/(Bi,La)4Ti3O12 TFT Structures
International Thin Film Transistor Conference, 2009
Recent Progress and Future Prospects of Oxide-channel Ferroelectric-gate Thin Film Transistor with Large Charge Controllability
2009 Spring meeting, Materials Research Society, 2009
Fabrication of In-Ga-Zn-O channel thin film transistors with high-k and ferroelectric gate insulators
23rd International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 23), 2009
OPTIMIZATION OF Pt AND PZT FILMS FOR FERROELECTRIC-GATE THIN FILM TRANSISTORS
12th Inter. Meeting on Ferroelectricity & 18th IEEE Intern.Symposium on the Applications of Ferroelectrics (IMF-IASF-2009), 2009
Ferroelectric Behaviors of P(VDF-TrFE) Thin Films on Transparent ITO Electrode
2009
Fabrication of IGZO-channel Ferroelectric-gate TFTs with Organic P(VDF-TrFE) Film
2009 fall meeting, Materials Research Society, 2009
Fabrication and Characterization of 4H-SiC MOSFETs with nitrogenation and deposited Al2O3 film
2009
Fabrication and Characterization of ITO/BZN Thin Film Transistors
The Proceedings of the 4th International TFT Conference(ITC 2008), 2008
酸化物チャネル強誘電体ゲート不揮発性メモリ素子の作製と評価
信学技報、SDM2007-274(2008-03), 2008
酸化物半導体InGaZnO膜の強誘電体ゲート薄膜トランジスタへの適用
第５５回 応用物理学関係連合会講演会, 2008
酸化物チャネル強誘電体ゲートトランジスタにおけるメモリ特性
電子情報通信学会2008年総合大会, 2008
強誘電体および高誘電率材料をゲート絶縁膜に用いた酸化物チャネル薄膜トランジスタ
信学技報、SDM2008-11、OME2008-11(2008-4), 2008
Transparent oxide-channel thin film transistor with Bi-Zn-Nb-O gate insulator
E-MRS 2008, Spring Meeting,, 2008
All-Oxide Transparent Thin Film Transistors with and without Nonvolatile Memory Function
15th Workshop on Dielectrics in Microelectronics(WoDiM 2008), 2008
Consideration on Required Ferroelectric Properties for Nonvolatile Ferroelectric-Gate Transistors
International Symposium on Integrated Ferroelectrics 2008(ISIF2008), 2008
Effect of Oxidant in MOCVD-growth of Al2O3 Gate Insurator on 4H-SiC MOSFET Properties
2008
強誘電体・高誘電率材料をゲート絶縁膜に用いたIGZOチャネル薄膜トランジスタの作製と評価
第69回応用物理学会学術講演会, 2008
Fabrication of IGZO Channel Thin Film Transistor with BZN Gate Insulator
2008 Fall Meeting, Materials Research Society, 2008
Fabrication and Characterization of ITO/BZN Thin Film Transistors
The Proceedings of the 4th International TFT Conference(ITC 2008), 2008
Transparent oxide-channel thin film transistor with Bi-Zn-Nb-O gate insulator
E-MRS 2008, Spring Meeting,, 2008
All-Oxide Transparent Thin Film Transistors with and without Nonvolatile Memory Function
15th Workshop on Dielectrics in Microelectronics(WoDiM 2008), 2008
Consideration on Required Ferroelectric Properties for Nonvolatile Ferroelectric-Gate Transistors
International Symposium on Integrated Ferroelectrics 2008(ISIF2008), 2008
Effect of Oxidant in MOCVD-growth of Al2O3 Gate Insurator on 4H-SiC MOSFET Properties
2008
Fabrication of IGZO Channel Thin Film Transistor with BZN Gate Insulator
2008 Fall Meeting, Materials Research Society, 2008
Reduction of Off Current in ITO-Channel Thin Film Transistor with Ferroelectric(Bi,La)4Ti3O12 Gate Insurator
The Proceedings of the 3rd International TFT Conference(ITC'07) in conjunction with SIC-MID Europe Chapter Spring Meeting,CNR Headquarters, 2007
極薄酸化膜を用いたAl2O3/SiC-MOSFETのチャネル移動度の向上
第54回応用物理学関係連合講演会, 2007
Al2O3/SiC-MOSFETトランジスタ特性のAl2O3堆積温度依存性
第54回応用物理学関係連合講演会, 2007
金属／絶縁体／強誘電体／絶縁体／半導体構造（M-I-FIS構造）キャパシタの作製と評価
第54回応用物理学関係連合講演会, 2007
ITO-Channel Ferroelectric-Gate Thin Film Transistor with Large Onn/off Current Radio
2007 MRS Spring Meeting, 2007
Sol-Gel Derived(Bi,La)4Ti3O12 Thin Films with Surface Treatment before Crystallization Annealing
16th IEEE International Symposium on the Applications of Ferroelectrics(ISAF2007), 2007
Characterization of Read-Out Drain Current Degradation in Ferroelectric-Gate Transistors
19th International Symposium of Intergrated Ferroelectrics(ISIF2007), 2007
Metal-Ferroelectric-Insulator-Semiconductor (MFIS) Structures with Sol-Gel Derived (Sm,Sr)Bi2Ta2O9 Films
19th International Symposium of Intergrated Ferroelectrics(ISIF2007), 2007
Fabrication and Characterization of M-I-FIS ferroelectric-gate structures using HfAlOx buffer layer
Insulating Films on Semiconductors(INFOS2007) 15th biannual conference, 2007
ＩＴＯチャネル強誘電体ゲートＦＥＴの特性改善
電子材料研究会, 2007
低温堆積Ａｌ２Ｏ３ｹﾞｰﾄ絶縁膜を用いたＳｉＣ－ＭＯＳＦＥＴ
ＳｉＣ及び関連ワイドギャップ半導体研究会個別討論会「ＳｉＣ ＭＯＳ界面とデバイス」, 2007
Bi1.5An1.0Nb1.5O7をｹﾞｰﾄ絶縁膜に用いたＩＴＯﾁｬﾈﾙ薄膜トランジスタの作製
第６８回 応用物理学会学術講演会, 2007
極薄膜酸化膜を用いたAl2O3/SiC MOSFETのチャネル移動度の向上（Ⅱ）
第６８回 応用物理学会学術講演会, 2007
低温堆積Al2O3を用いたSiC MOSFETのアニールによる電気的特性の変化
第６８回 応用物理学関係連合講演会, 2007
Anomalously High Channel Mobility in SiC-MOSFETs with Al2O3/SiOx/SiC Gate Structure
International Conference on Silicon Barbide and Related Materials 2007, 2007
Nonvolatile memory operetaion of ferroelectric-gate thin film transistors using oxide channel
the 14th International Workshop on Oxide Electronics(WOE14), 2007
Reduction of Off Current in ITO-Channel Thin Film Transistor with Ferroelectric(Bi,La)4Ti3O12 Gate Insurator
The Proceedings of the 3rd International TFT Conference(ITC'07) in conjunction with SIC-MID Europe Chapter Spring Meeting,CNR Headquarters, 2007
ITO-Channel Ferroelectric-Gate Thin Film Transistor with Large Onn/off Current Radio
2007 MRS Spring Meeting, 2007
Sol-Gel Derived(Bi,La)4Ti3O12 Thin Films with Surface Treatment before Crystallization Annealing
16th IEEE International Symposium on the Applications of Ferroelectrics(ISAF2007), 2007
Characterization of Read-Out Drain Current Degradation in Ferroelectric-Gate Transistors
19th International Symposium of Intergrated Ferroelectrics(ISIF2007), 2007
Metal-Ferroelectric-Insulator-Semiconductor (MFIS) Structures with Sol-Gel Derived (Sm,Sr)Bi2Ta2O9 Films
19th International Symposium of Intergrated Ferroelectrics(ISIF2007), 2007
Fabrication and Characterization of M-I-FIS ferroelectric-gate structures using HfAlOx buffer layer
Insulating Films on Semiconductors(INFOS2007) 15th biannual conference, 2007
Anomalously High Channel Mobility in SiC-MOSFETs with Al2O3/SiOx/SiC Gate Structure
International Conference on Silicon Barbide and Related Materials 2007, 2007
Nonvolatile memory operetaion of ferroelectric-gate thin film transistors using oxide channel
the 14th International Workshop on Oxide Electronics(WOE14), 2007
ITO Channel Thin-Film Transistor with Ferroelectric Gate Insulator
ITC’06 International Thin-Film Transistor Conference, 2006
強誘電体ゲートFETの読み出し動作に関する考察
第５３回応用物理学関係連合講演会, 2006
機械研磨を用いて作製したBLT/ITO構造薄膜トランジスタの性能向上
第５３回応用物理学関係連合講演会, 2006
Preparation of Al2O3 Thin Films on SiC by Metal Organic Chemical Vapor Deposition
2006 Spring meeting, Materials Research Society, 2006
Electrical Properties of nonvolatile ferroelectric-gate thin film transistors using ITO channel
The 2006 International Meeting for Future of Electron Devices, 2006
Crystallographic Orientation Control of Sol-gel-derived (Bi,La)4Ti3O12 (BLT) Films using Surface Seed Layer
11th International Ceramics Congress, 4th Forum on New Materials, 2006
強誘電体ゲート構造を用いたITOチャネル薄膜トランジスタ
誘電体研究委員会, 第89回定例会, 2006
Fabrication and Characterization of 4H-SiC MOSFET with MOCVD-Grown Al2O3 Gate Insulator
the 6th European Conference on Silicon Carbide and Related Materials(ECSCRM), 2006
強誘電体構造を用いたＩＴＯチャネル薄膜トランジスタ
日本金属学会（第３分科会）、シリコンデバイスの最先端技術・材料開発の展望, 2006
Improved Electrical Properties of ITO-Channel Thin Film Transistor with Ferroelectric Gate Insulator
13th International Workshop on Oxide Electronics (WOE13), 2006
Ferroelectric Gate Insulator - not only for nonvolatile memory device -
2006 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ULSI DEVICED:SCIENCE AND TECHNOLOGY, 2006
Al/HfAlOx/SBT/SiO2/p-Si(M-I-FIS構造）キャパシタの作製と評価
日本ＭＲＳ 第１７回学術シンポジウム, 2006
ITO Channel Thin-Film Transistor with Ferroelectric Gate Insulator
ITC’06 International Thin-Film Transistor Conference, 2006
Preparation of Al2O3 Thin Films on SiC by Metal Organic Chemical Vapor Deposition
2006 Spring meeting, Materials Research Society, 2006
Electrical Properties of nonvolatile ferroelectric-gate thin film transistors using ITO channel
The 2006 International Meeting for Future of Electron Devices, 2006
Crystallographic Orientation Control of Sol-gel-derived (Bi,La)4Ti3O12 (BLT) Films using Surface Seed Layer
11th International Ceramics Congress, 4th Forum on New Materials, 2006
Fabrication and Characterization of 4H-SiC MOSFET with MOCVD-Grown Al2O3 Gate Insulator
the 6th European Conference on Silicon Carbide and Related Materials(ECSCRM), 2006
Improved Electrical Properties of ITO-Channel Thin Film Transistor with Ferroelectric Gate Insulator
13th International Workshop on Oxide Electronics (WOE13), 2006
Ferroelectric Gate Insulator - not only for nonvolatile memory device -
2006 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ULSI DEVICED:SCIENCE AND TECHNOLOGY, 2006
Fabrication and Characterization of Al/HfAlOx/SBT/SiO2/p-Si(M-I-FIS)Structures
The Materials Research Society of Japan, 2006
Impact of low pressure consolidation annealing on electrical properties of sol-gel derived Pb(Zr,Ti)O3 films
Journal of the European Ceramic Society, 2005
Use of ferroelectric gate insulator for thin film transistors with ITO channel
Journal of Microelectronic Engineering, 2005
Non-volatile Thin Film Transistors Using Ferroelectric/ITO Structures
2005
Electrical Properties of Bi4-xPrxTi3O12(BPT) Thin Films Prepared by Sol-Gel Method
Transactions of Materials Research Society of Japan, 2005
Impact of low pressure consolidation annealing on electrical properties of sol-gel derived Pb(Zr,Ti)O3 films
Journal of the European Ceramic Society, 2005
Use of ferroelectric gate insulator for thin film transistors with ITO channel
Journal of Microelectronic Engineering, 2005
Non-volatile Thin Film Transistors Using Ferroelectric/ITO Structures
2005
Electrical Properties of Bi4-xPrxTi3O12(BPT) Thin Films Prepared by Sol-Gel Method
Transactions of Materials Research Society of Japan, 2005
Characterization of Metal-Ferroelectric-Metal Insulator-Semiconductor(MFMIS) FETs Using (Sr,Sm)0.8Bi2.2O9(SSBT) Thin Films
Materials Research Society Symp., 2004
Characterization of Metal-Ferroelectric-Metal Insulator-Semiconductor(MFMIS) FETs Using (Sr,Sm)0.8Bi2.2O9(SSBT) Thin Films
Materials Research Society Symp., 2004
IrO2/Ir Multilayer-Structure Electrode for MFMIS Ferroelectric Gate Transistors
2003
Sm Doping Effects on Electrical Properties of Sol-Gel Derived SrBi2Ta2O9 Films
Materials Research Society Symp. Proc., 2003
IrO2/Ir Multilayer-Structure Electrode for MFMIS Ferroelectric Gate Transistors
2003
Sm Doping Effects on Electrical Properties of Sol-Gel Derived SrBi2Ta2O9 Films
Materials Research Society Symp. Proc., 2003
Switchable NAND/NOR Logic-Gate Using Ferroelectric Control Capacitor
Ext. Abst. 20th Electronic Materials Symp., Nara, Japan, 2001
Flexible Logic-Gate Using Ferroelectric Films
2001 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices, Cheju, Korea, 2001
High-k ゲート絶縁膜用酸化物材料の研究
電気学会電子材料研究会, 2001
Switchable NAND/NOR Logic-Gate Using Ferroelectric Control Capacitor
Ext. Abst. 20th Electronic Materials Symp., Nara, Japan, 2001
Flexible Logic-Gate Using Ferroelectric Films
2001 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices, Cheju, Korea, 2001
Realization of adaptive learning function in a neuron circuit using metal/ferroelectric (SrBi_2_Ta_2_O_9_)/semiconductor field effect transisitor (MFSFET)
Jpn. J. Appl. Phys., 1999
Realization of adaptive learning function in a neuron circuit using metal/ferroelectric (SrBi_2_Ta_2_O_9_)/semiconductor field effect transisitor (MFSFET)
Jpn. J. Appl. Phys., 1999
Electrical Characteristics of Neuron Oscillation Circuits Composed of MOSFETs and Complementary Unijunction Transistors
1998
Electrical Characteristics of Neuron Oscillation Circuits Composed of MOSFETs and Complementary Unijunction Transistors
1998
Crystalline Quality and Electrical Properties of PbZrxTi1-xO3 Thin Films Prepared on SrTiO3-Covered Si Substrates
Japanese Journal of Applied Physics, 1995
Crystalline Quality and Electrical Properties of PbZrxTi1-xO3 Thin Films Prepared on SrTiO3-Covered Si Substrates
Japanese Journal of Applied Physics, 1995
Partial Switching Kinetics of Ferroelectric PZT Thin Films Prepared by Sol-Gel Technique
1994
Preparation of PbZrxTi1-xO3 Films on Si Substrates using SrTiO3 Buffer Layers
Materials Research Society Symposium Proceedings, 1994
Partial Switching Kinetics of Ferroelectric PZT Thin Films Prepared by Sol-Gel Technique
1994
Preparation of PbZrxTi1-xO3 Films on Si Substrates using SrTiO3 Buffer Layers
Materials Research Society Symposium Proceedings, 1994
Free carrier saturation in III-V compound semiconductors
1993
Free carrier saturation in III-V compound semiconductors
1993
Correlation between Fermi level stabilization positions and maximumfree carrier coucentrations in (]G0003[)-(]G0005[) compound semiconductors
Japanese Journal Applied Physics, 1990
Correlation between Fermi level stabilization positions and maximumfree carrier coucentrations in (]G0003[)-(]G0005[) compound semiconductors
Japanese Journal Applied Physics, 1990
Photo-Metalorganic Molecular Beam Epitaxy - a New Epitaxial Growth Technique -
35th National Symp. American Vacuum Society, 1988
Photo-Metalorganic Molecular Beam Epitaxy - a New Epitaxial Growth Technique -
35th National Symp. American Vacuum Society, 1988