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TOKUMITSU, Eisuke Professor
Materials Science, Nanomaterials and Devices

Published Papers

63 items
Indium oxide and indium-tin-oxide channel ferroelectric gate thin film transistors with yttrium doped hafnium-zirconium dioxide gate insulator prepared by chemical solution process
Mohit, Takaaki Miyasako, Eisuke Tokumitsu
Japanese Journal of Applied Physics, 60, -, 2021
Impact of annealing environment on electrical properties of yttrium-doped hafnium zirconium dioxide thin films prepared by the solution process
Mohit, Tatsuya Murakami, Ken-ichi Haga, Eisuke Tokumitsu
Japanese Journal of Applied Physics, 59, SP, SPPB03-SPPB03, 2020
Electrical properties of yttrium-doped hafnium-zirconium dioxide thin films prepared by solution process for ferroelectric gate insulator TFT application
Mohit, Ken-ichi Haga, Eisuke Tokumitsu
Japanese Journal of Applied Physics, 59, SM, SMMB02-SMMB02, 2020
Electrical properties of In2O3 and ITO thin films formed by solution process using In(acac)3 precursors
Puneet Jain, Yuji Nakabayashi, Ken-ichi Haga, Eisuke Tokumitsu
Japanese Journal of Applied Physics, 59, SC, SCCB12-SCCB12, 2020
A simple analysis of polarization reversal of ferroelectric capacitor demonstrating negative capacitance-like behavior
Eisuke Tokumitsu
Japanese Journal of Applied Physics, 59, SC, SCCB06-SCCB06, 2020
Applications of Oxide-Channel Ferroelectric-Gate Thin-Film Transistors
Eisuke Tokumitsu, Tatsuya Shimoda
Topics in Applied Physics, 131, 413-425, 2020
Electrical and patterning properties of direct nanoimprinted indium oxide (In2O3) and indium tin oxide (ITO)
Jain Puneet, Su Chang, Haga Ken-ichi, Tokumitsu Eisuke
JAPANESE JOURNAL OF APPLIED PHYSICS, 58, -, 2019
Direct imprinting of indium-tin-oxide precursor gel and simultaneous formation of channel and source/drain in thin-film transistor
Ken-Ichi Haga, Yuusuke Kamiya, Eisuke Tokumitsu
Japanese Journal of Applied Physics, 57, 2, -, 2018
Evaluation of (Bi,La)(4)Ti3O12 Thin Film for Capacitor-Type Synapses
2018 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK), -, 2018
Investigation of Nb-Zr-O Thin Film using Sol-gel Coating
Joonam Kim, Ken-ichi Haga, Eisuke Tokumitsu
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 17, 2, 245-251, 2017
Fabrication of MoS2 thin films on oxide-dielectric-covered substrates by chemical solution process
Joonam Kim, Koichi Higashimine, Ken-ichi Haga, Eisuke Tokumitsu
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 254, 2, -, 2017
Nano Electronic Materials FOREWORD
Eisuke Tokumitsu, Musubu Ichikawa, Akira Baba, Hironori Fujisawa, Kazuaki Furukawa, Susumu Horita, Eiji Itoh, Takeshi Kawae, Shinya Kumagai, Atsushi Masuda, Tatsuo Mori, Hiroyuki Okada, Yukinori Ono, Hisayuki Suematsu, Toshi-kazu Suzuki, Yasushi Takemura, Taishi Takenobu, Nozomu Tsuboi
JAPANESE JOURNAL OF APPLIED PHYSICS, 55, 2, -, 2016
Fabrication of MoS2 thin films on oxide-dielectric-covered substrates
Joonam Kim, Eisuke Tokumitsu
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS), -, 2016
Oxide-Channel Ferroelectric-Gate Thin Film Transistors with Nonvolatile Memory Function
Eisuke Tokumitsu
FERROELECTRIC-GATE FIELD EFFECT TRANSISTOR MEMORIES: DEVICE PHYSICS AND APPLICATIONS, 131, 75-88, 2016
Applications of Oxide Channel Ferroelectric-Gate Thin Film Transistors
Eisuke Tokumitsu, Tatsuya Shimoda
FERROELECTRIC-GATE FIELD EFFECT TRANSISTOR MEMORIES: DEVICE PHYSICS AND APPLICATIONS, 131, 335-347, 2016
High-relative-dielectric-constant bismuth-niobium-oxide films prepared using Nb-rich precursor solution
Tomoki Ariga, Satoshi Inoue, Shin Matsumoto, Masatoshi Onoue, Takaaki Miyasako, Eisuke Tokumitsu, Tatsuya Shimoda
JAPANESE JOURNAL OF APPLIED PHYSICS, 54, 9, -, 2015
Fabrication and characterization of ferroelectric-gate thin-film transistors with an amorphous oxide semiconductor, amorphous In-Ga-Zn-O
Ken-ichi Haga, Eisuke Tokumitsu
JAPANESE JOURNAL OF APPLIED PHYSICS, 53, 11, -, 2014
Investigation of solution-processed bismuth-niobium-oxide films
Satoshi Inoue, Tomoki Ariga, Shin Matsumoto, Masatoshi Onoue, Takaaki Miyasako, Eisuke Tokumitsu, Norimichi Chinone, Yasuo Cho, Tatsuya Shimoda
JOURNAL OF APPLIED PHYSICS, 116, 15, -, 2014
Fabrication of LaRuO nano-pattern by rheology printing
Nagahara Koji, Hirose Daisuke, Li Jinwang, Tokumitsu Eisuke, Shimoda Tatsuya
JSAP Annual Meetings Extended Abstracts, 2014.2, 1452-1452, 2014
Relationship between source/drain-contact structures and switching characteristics in oxide-channel ferroelectric-gate thin-film transistors
Ken-ichi Haga, Yuuki Nakada, Dan Ricinschi, Eisuke Tokumitsu
JAPANESE JOURNAL OF APPLIED PHYSICS, 53, 9, -, 2014
Nano-Rheology Printing (nRP): A Direct Printing Technique for Well-Defined Metal Oxide Patterns and Devices
T. Shimoda, T. Kaneda, D. Hirose, T. Miyasako, P. T. Tue, Y. Murakami, S. Kohara, J. Li, T. Mitani, E. Tokumitsu, S. Nobukawa
Proceedings in E-MRS 2014 Spring Meeting, -, 2014
Fabrication of 120-nm-channel-length ferroelectric-gate thin-film transistor by nanoimprint lithography
Koji Nagahara, Bui Nguyen Quoc Trinh, Eisuke Tokumitsu, Satoshi Inoue, Tatsuya Shimoda
JAPANESE JOURNAL OF APPLIED PHYSICS, 53, 2, -, 2014
All solution-processed amorphous oxide thin-film transistors using UV/O-3 treatment
Kenichi Umeda, Takaaki Miyasako, Ayumu Sugiyama, Atsushi Tanaka, Masayuki Suzuki, Eisuke Tokumitsu, Tatsuya Shinnoda
JAPANESE JOURNAL OF APPLIED PHYSICS, 53, 2, -, 2014
Rheology printing for metal-oxide patterns and devices
Toshihiko Kaneda, Daisuke Hirose, Takaaki Miyasako, Phan Trong Tue, Yoshitaka Murakami, Shinji Kohara, Jinwang Li, Tadaoki Mitani, Eisuke Tokumitsu, Tatsuya Shimoda
JOURNAL OF MATERIALS CHEMISTRY C, 2, 1, 40-49, 2014
Observation of high dielectric constant of Bi-Nb-O-x thin-film capacitors fabricated by chemical solution deposition process
Masatoshi Onoue, Takaaki Miyasako, Eisuke Tokumitsu, Tatsuya Shimoda
IEICE ELECTRONICS EXPRESS, 11, 16, -, 2014
Experimental demonstration of a ferroelectric FET using paper substrate
Changhwan Shin, Gwang-Geun Lee, Dae-Hee Han, Seung-Pil Han, Eisuke Tokumitsu, Shun-Ichiro Ohmi, Dong-Joo Kim, Hiroshi Ishiwara, Minseo Park, Seung-Hyun Kim, Wan-Gyu Lee, Yun Jeong Hwang, Byung-Eun Park
IEICE ELECTRONICS EXPRESS, 11, 14, -, 2014
Surface-modified lead-zirconium-titanate system for solution-processed ferroelectric-gate thin-film transistors
Tue Trong Phan, Takaaki Miyasako, Koichi Higashimine, Eisuke Tokumitsu, Tatsuya Shimoda
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 113, 2, 333-338, 2013
Unipolar behavior in graphene-channel field-effect-transistors with n-type doped SiC source/drain regions
Yuichi Nagahisa, Yuichi Harada, Eisuke Tokumitsu
APPLIED PHYSICS LETTERS, 103, 22, -, 2013
Impact of UV/O-3 treatment on solution-processed amorphous InGaZnO4 thin-film transistors
Kenichi Umeda, Takaaki Miyasako, Ayumu Sugiyama, Atsushi Tanaka, Masayuki Suzuki, Eisuke Tokumitsu, Tatsuya Shimoda
JOURNAL OF APPLIED PHYSICS, 113, 18, -, 2013
Interface charge trap density of solution processed ferroelectric gate thin film transistor using ITO/PZT/Pt structure
Pham Van Thanh, Bui Nguyen Quoc Trinh, Takaaki Miyasako, Phan Trong Tue, Eisuke Tokumitsu, Tatsuya Shimoda
Ferroelectrics, Letters Section, 40, 1-3, 17-29, 2013
High-performance solution-processed ZrInZnO thin-film transistors
Phan Trong Tue, Takaaki Miyasako, Jinwang Li, Huynh Thi Cam Tu, Satoshi Inoue, Eisuke Tokumitsu, Tatsuya Shimoda
IEEE Transactions on Electron Devices, 60, 1, 320-326, 2013
Highly conductive p-type amorphous oxides from low-temperature solution processing
Jinwang Li, Eisuke Tokumitsu, Mikio Koyano, Tadaoki Mitani, Tatsuya Shimoda
APPLIED PHYSICS LETTERS, 101, 13, -, 2012
Electric Properties and Interface Charge Trap Density of Ferroelectric Gate Thin Film Transistor Using (Bi,La)(4)Ti3O12/Pb(Zr,Ti)O-3 Stacked Gate Insulator
Pham Van Thanh, Bui Nguyen Quoc Trinh, Takaaki Miyasako, Phan Trong Tue, Eisuke Tokumitsu, Tatsuya Shimoda
JAPANESE JOURNAL OF APPLIED PHYSICS, 51, 9, -, 2012
Crystallization of lead zirconate titanate without passing through pyrochlore by new solution process
Hiroyuki Kameda, Jinwang Li, Dam Hieu Chi, Ayumi Sugiyama, Koichi Higashimine, Tomoya Uruga, Hajime Tanida, Kazuo Kato, Toshihiko Kaneda, Takaaki Miyasako, Eisuke Tokumitsu, Tadaoki Mitani, Tatsuya Shimoda
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 32, 8, 1667-1680, 2012
P-type conductive amorphous oxides of transition metals from solution processing
Jinwang Li, Toshihiko Kaneda, Eisuke Tokumitsu, Mikio Koyano, Tadaoki Mitani, Tatsuya Shimoda
APPLIED PHYSICS LETTERS, 101, 5, -, 2012
Evaluation of Channel Modulation in In2O3/(Bi,La)(4)Ti3O12 Ferroelectric-Gate Thin Film Transistors by Capacitance-Voltage Measurements
Eisuke Tokumitsu, Kazuya Kikuchi
FERROELECTRICS, 429, 15-21, 2012
Suppression of Hole Current in Graphene Transistors with n-type Doped SiC Source/Drain Regions
Yuichi Nagahisa, Eisuke Tokumitsu
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 717-720, 679-682, 2012
Correlated motion dynamics of electron channels and domain walls in a ferroelectric-gate thin-film transistor consisting of a ZnO/Pb(Zr,Ti)O-3 stacked structure
Yukihiro Kaneko, Yu Nishitani, Hiroyuki Tanaka, Michihito Ueda, Yoshihisa Kato, Eisuke Tokumitsu, Eiji Fujii
JOURNAL OF APPLIED PHYSICS, 110, 8, -, 2011
A 60 nm channel length ferroelectric-gate field-effect transistor capable of fast switching and multilevel programming
Yukihiro Kaneko, Yu Nishitani, Michihito Ueda, Eisuke Tokumitsu, Eiji Fujii
APPLIED PHYSICS LETTERS, 99, 18, -, 2011
Low-Voltage Operation of Ferroelectric Gate Thin Film Transistors Using Indium Gallium Zinc Oxide-Channel and Ferroelectric Polymer Poly(vinylidene fluoride-trifluoroethylene)
Gwang-Geun Lee, Yoshihisa Fujisaki, Hiroshi Ishiwara, Eisuke Tokumitsu
APPLIED PHYSICS EXPRESS, 4, 9, -, 2011
The flexible non-volatile memory devices using oxide semiconductors and ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene)
Gwang-Geun Lee, Eisuke Tokumitsu, Sung-Min Yoon, Yoshihisa Fujisaki, Joo-Won Yoon, Hiroshi Ishiwara
APPLIED PHYSICS LETTERS, 99, 1, -, 2011
Ferroelectric-Gate Thin-Film Transistor Fabricated by Total Solution Deposition Process
Takaaki Miyasako, Bui Nguyen Quoc Trinh, Masatoshi Onoue, Toshihiko Kaneda, Phan Trong Tue, Eisuke Tokumitsu, Tatsuya Shimoda
JAPANESE JOURNAL OF APPLIED PHYSICS, 50, 4, -, 2011
Totally solution-processed ferroelectric-gate thin-film transistor
Takaaki Miyasako, Bui Nguyen Quoc Trinh, Masatoshi Onoue, Toshihiko Kaneda, Phan Trong Tue, Eisuke Tokumitsu, Tatsuya Shimoda
APPLIED PHYSICS LETTERS, 97, 17, -, 2010
A low-temperature crystallization path for device-quality ferroelectric films
Jinwang Li, Hiroyuki Kameda, Bui Nguyen Quoc Trinh, Takaaki Miyasako, Phan Trong Tue, Eisuke Tokumitsu, Tadaoki Mitani, Tatsuya Shimoda
APPLIED PHYSICS LETTERS, 97, 10, -, 2010
Impact of interface controlling layer of Al2O3 for improving the retention behaviors of In-Ga-Zn oxide-based ferroelectric memory transistor
Sung-Min Yoon, Shin-Hyuk Yang, Soon-Won Jung, Chun-Won Byun, Sang-Hee Ko Park, Chi-Sun Hwang, Gwang-Geun Lee, Eisuke Tokumitsu, Hiroshi Ishiwara
APPLIED PHYSICS LETTERS, 96, 23, -, 2010
Improvement of Sol-Gel Derived PbZrxTi1-xO3 Film Properties Using Thermal Press Treatment
Toshihiko Kaneda, Joo-Nam Kim, Eisuke Tokumitsu, Tatsuya Shimoda
JAPANESE JOURNAL OF APPLIED PHYSICS, 49, 9, -, 2010
Optimization of Pt and PZT Films for Ferroelectric-Gate Thin Film Transistors
Phan Trong Tue, Takaaki Miyasako, Bui Nguyen Quoc Trinh, Jinwang Li, Eisuke Tokumitsu, Tatsuya Shimoda
FERROELECTRICS, 405, 281-291, 2010
Fabrication and Characterization of a Ferroelectric-Gate FET With a ITO/PZT/SRO/Pt Stacked Structure
Phan Trong Tue, Bui Nguyen Quoc Trinh, Takaaki Miyasako, Eisuke Tokumitsu, Tatsuya Shimoda
2010 INTERNATIONAL CONFERENCE ON MICROELECTRONICS, 32-35, 2010
Flexible ferroelectric-TFTs using IGZO-channel and P(VDF-TrFE)
Gwang-Geun Lee, Sung-Min Yoon, Joo-Won Yoon, Yoshihisa Fujisaki, Hiroshi Ishiwara, Eisuke Tokumitsu
IDW'10: PROCEEDINGS OF THE 17TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3, 2211-2212, 2010
Effects of Excimer Laser Annealing on InGaZnO4 Thin-Film Transistors Having Different Active-Layer Thicknesses Compared with Those on Polycrystalline Silicon
Mitsuru Nakata, Kazushige Takechi, Shinya Yamaguchi, Eisuke Tokumitsu, Hirotaka Yamaguchi, Setsuo Kaneko
JAPANESE JOURNAL OF APPLIED PHYSICS, 48, 11, -, 2009
Anomalously High Channel Mobility in SiC-MOSFETs with Al2O3/SiOx/SiC Gate Structure
Shiro Hino, Tomohiro Hatayama, Jun Kato, Naruhisa Miura, Tatsuo Oomori, Eisuke Tokumitsu
SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 600-603, 683-+, 2009
Effect of Oxidant in MOCVD-growth of Al(2)O(3) Gate Insulator on 4H-SiC MOSFET Properties
Hitoshi Moriya, Shiro Hino, Naruhisa Miura, Tatsuo Oomori, Eisuke Tokumitsu
SILICON CARBIDE AND RELATED MATERIALS 2008, 615-617, 777-780, 2009
Fabrication and characterization of 4H-SiC MOSFET with MOCVD-grown Al2O3 gate insulator
Shiro Hino, Tomohiro Hatayama, Naruhisa Miura, Tatsuo Oomori, Eisuke Tokumitsu
SILICON CARBIDE AND RELATED MATERIALS 2006, 556-557, 787-+, 2007
ITO-channel ferroelectric-gate thin film transistor with large on/off current ratio
Eisuke Tokumitsu, Masaru Senoo, Etsu Shin, Tomofumi Fujimura
MATERIALS AND PROCESSES FOR NONVOLATILE MEMORIES II, 997, 237-242, 2007
Fabrication of SBT-based ferroelectric thin films for low voltage operation of ferroelectric-gate FET
Hirokazu Saiki, Syahhibul Azwar, Eisuke Tokumitsu
Transactions of the Materials Research Society of Japan, Vol 31, No 1, 31, 1, 197-200, 2006
Low temperature deposition of HfO2 gate insulator on SiC by metalorganic chemical vapor deposition
Shiro Hino, Tomohiro Hatayama, Naruhisa Miura, Tatsuo Ozeki, Eisuke Tokumitsu
SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 527-529, 1079-+, 2006
ELECTRON MOBILITY IN BAMGF4/ALGAAS/GAAS(100) HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES
S OHMI, E TOKUMITSU, H ISHIWARA
REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, SUPPLEMENT NO 13, MARCH 1995, 177-180, 1995
ELECTRICAL PROPERTIES OF PZT FILMS PREPARED ON SI SUBSTRATES USING SRTIO3 BUFFER LAYERS
K ITANI, E TOKUMITSU, B MOON, H ISHIWARA
REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, SUPPLEMENT NO 13, MARCH 1995, 109-114, 1995
FREE-CARRIER SATURATION IN III-V COMPOUND SEMICONDUCTORS
E TOKUMITSU, M KONAGAI
SHALLOW IMPURITIES IN SEMICONDUCTORS, 117, 435-440, 1993
HEAVILY CARBON-DOPED P-TYPE GAAS/INGAAS STRAINED-LAYER SUPERLATTICES GROWN BY MOMBE
M QI, JS LUO, J SHIRAKASHI, E TOKUMITSU, S NOZAKI, M KONAGAI, K TAKAHASHI
SEMICONDUCTOR HETEROSTRUCTURES FOR PHOTONIC AND ELECTRONIC APPLICATIONS, 281, 167-171, 1993
Characterization of Metallic p-Type GaAs Grown by Metalorganic Molecular Beam Epitaxy
KONAGAI Makoto, YAMADA Takumi, AKATSUKA Takeshi, FUKAMACHI Taichi, SAITO Koki, TOKUMITSU Eisuke, TAKAHASHI Kiyoshi
OYOBUTURI, 59, 1, 47-53, 1990
CHARACTERIZATION OF P-TYPE GAAS HEAVILY DOPED WITH CARBON GROWN BY METALLORGANIC MBE
K SAITO, E TOKUMITSU, T AKATSUKA, M MIYAUCHI, T YAMADA, M KONAGAI, K TAKAHASHI
INSTITUTE OF PHYSICS CONFERENCE SERIES <D>, 96, 69-72, 1989
CHARACTERIZATION OF P-TYPE GAAS HEAVILY DOPED WITH CARBON GROWN BY METALLORGANIC MBE
K SAITO, E TOKUMITSU, T AKATSUKA, M MIYAUCHI, T YAMADA, M KONAGAI, K TAKAHASHI
GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988, 69-72, 1989