Indium oxide and indium-tin-oxide channel ferroelectric gate thin film transistors with yttrium doped hafnium-zirconium dioxide gate insulator prepared by chemical solution process
Mohit, Takaaki Miyasako, Eisuke Tokumitsu
Japanese Journal of Applied Physics, 60, -, 2021

Impact of annealing environment on electrical properties of yttrium-doped hafnium zirconium dioxide thin films prepared by the solution process
Mohit, Tatsuya Murakami, Ken-ichi Haga, Eisuke Tokumitsu
Japanese Journal of Applied Physics, 59, SP, SPPB03-SPPB03, 2020

Electrical properties of yttrium-doped hafnium-zirconium dioxide thin films prepared by solution process for ferroelectric gate insulator TFT application
Mohit, Ken-ichi Haga, Eisuke Tokumitsu
Japanese Journal of Applied Physics, 59, SM, SMMB02-SMMB02, 2020

Electrical properties of In2O3 and ITO thin films formed by solution process using In(acac)3 precursors
Puneet Jain, Yuji Nakabayashi, Ken-ichi Haga, Eisuke Tokumitsu
Japanese Journal of Applied Physics, 59, SC, SCCB12-SCCB12, 2020

A simple analysis of polarization reversal of ferroelectric capacitor demonstrating negative capacitance-like behavior
Eisuke Tokumitsu
Japanese Journal of Applied Physics, 59, SC, SCCB06-SCCB06, 2020

Evaluation of (Bi, La)4Ti3012 Thin Film for Capacitor-Type Synapses
Yuta Miyabe, Isato Ogawa, Mutsumi Kimura, Eisuke Tokumitsu, Kenichi Haga, Isao Horiuchi
IMFEDK 2018 - 2018 International Meeting for Future of Electron Devices, Kansai, -, 2018

Preface
Panagiotis Dimitrakis, Yoshihisa Fujisaki, Guohan Hu, Eisuke Tokumitsu
Materials Research Society Symposium Proceedings, 1729, -, 2015

Oxide-channel ferroelectric-gate thin film transistors prepared by solution process
Eisuke Tokumitsu, Tatsuya Shimoda
Proceedings of the International Display Workshops, 1, 71-74, 2015

A study on graphitization of 4H-SiC(0001) surface under low pressure oxygen atmosphere and effects of pre-oxidation treatment
Yuichi Nagahisa, Yoshishige Tsuchiya, Eisuke Tokumitsu
Materials Science Forum, 821-823, 949-952, 2015

Kelvin probe force microscopy study on operating In-Sn-O-channel ferroelectric-gate thin-film transistors
P. T. Tue, T. Miyasako, E. Tokumitsu, T. Shimoda
Journal of Applied Physics, 115, 10, -, 2014

Oxide-Channel Ferroelectric-Gate Thin Film Transistors with Nonvolatile Memory Function
“Ferroelectric-Gate Field Effect Transistor Memories”,Springer, 2016., 2016

Applications of Oxide Channel Ferroelectric-Gate Thin Film Transistors
“Ferroelectric-Gate Field Effect Transistor Memories”, Springer, 2016., 2016

Materials and physics for nonvolatile memories II : spring 2010, April 5-9, San Francisco, California, U.S.A.
Materials Research Society, 2010

電子物性・材料の事典
朝倉書店, 2006

Coating properties of chemical solution processed MoS2 thin films on various oxides
2017 European Materials Research Society (E-MRS) Spring Meeting, Strasbourg, France, May 22-26, 2017. paper Q.PM.4, 2017

Chemical Solution Process of In-Based Oxides and MoS2 for Thin Film Transistors
The 6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017), June 18-321, 2017, Fukui, paper PA2-1-1, 2017

Direct Imprinting of Oxide Precursor Gel for New Fabrication Process of Thin Film Transistors
The 6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017), June 18-321, 2017, Fukui, paper PO3-47, 2017

Investigation of Nb-Zr-O thin film using sol-gel coating
82016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2016), paper B3-3(oral) July 4 - 6, 2016Hakodate Kokusai Hotel, Hakodate, Japan, 2017

Fabrication of MoS2 thin films on oxide-dielectric-covered substrates
Compound Semiconductor Week, June 26-30, 2016 Toyama International Conference Center, Toyama paper MoP-ISCS-121, 2017