徳光 永輔 (TOKUMITSU, Eisuke)教授
マテリアルサイエンス系, 応用物理学領域
◆学位
博士(工学) 東京工業大学
◆職歴
2007 - : 東京工業大学精密工学研究所 , 准教授
2004 - : 東京工業大学精密工学研究所 , 助教授
2002 - : 東北大学電気通信研究所助教授
1992 - : 東京工業大学 助教授
1988 - : AT&T Bell Laboratories Member of Technical Staff
1987 - : 東京工業大学 助手
◆専門分野
電子デバイス、電子機器
◆研究キーワード
半導体デバイス、酸化物半導体、強誘電体、薄膜トランジスタ、不揮発性メモリ、パワーデバイス、溶液プロセス
◆研究課題
液体原料による革新的電子デバイス作製プロセス 不揮発性メモリ 薄膜トランジスタ パワーデバイス グラフェントランジスタ

■研究業績

◆発表論文
Impact of annealing environment on electrical properties of yttrium-doped hafnium zirconium dioxide thin films prepared by the solution process
Mohit, Tatsuya Murakami, Ken-ichi Haga, Eisuke Tokumitsu
Japanese Journal of Applied Physics, 59, SP, SPPB03-SPPB03, 2020
Electrical properties of yttrium-doped hafnium-zirconium dioxide thin films prepared by solution process for ferroelectric gate insulator TFT application
Mohit, Ken-ichi Haga, Eisuke Tokumitsu
Japanese Journal of Applied Physics, 59, SM, SMMB02-SMMB02, 2020
Electrical properties of In2O3 and ITO thin films formed by solution process using In(acac)3 precursors
Puneet Jain, Yuji Nakabayashi, Ken-ichi Haga, Eisuke Tokumitsu
Japanese Journal of Applied Physics, 59, SC, SCCB12-SCCB12, 2020
A simple analysis of polarization reversal of ferroelectric capacitor demonstrating negative capacitance-like behavior
Eisuke Tokumitsu
Japanese Journal of Applied Physics, 59, SC, SCCB06-SCCB06, 2020
Electrical and patterning properties of direct nanoimprinted indium oxide (In2O3) and indium tin oxide (ITO)
Jain Puneet, Su Chang, Haga Ken-ichi, Tokumitsu Eisuke
JAPANESE JOURNAL OF APPLIED PHYSICS, 58, -, 2019
◆Misc
Evaluation of (Bi, La)4Ti3012 Thin Film for Capacitor-Type Synapses
Yuta Miyabe, Isato Ogawa, Mutsumi Kimura, Eisuke Tokumitsu, Kenichi Haga, Isao Horiuchi
IMFEDK 2018 - 2018 International Meeting for Future of Electron Devices, Kansai, -, 2018
Preface
Panagiotis Dimitrakis, Yoshihisa Fujisaki, Guohan Hu, Eisuke Tokumitsu
Materials Research Society Symposium Proceedings, 1729, -, 2015
Oxide-channel ferroelectric-gate thin film transistors prepared by solution process
Eisuke Tokumitsu, Tatsuya Shimoda
Proceedings of the International Display Workshops, 1, 71-74, 2015
A study on graphitization of 4H-SiC(0001) surface under low pressure oxygen atmosphere and effects of pre-oxidation treatment
Yuichi Nagahisa, Yoshishige Tsuchiya, Eisuke Tokumitsu
Materials Science Forum, 821-823, 949-952, 2015
Kelvin probe force microscopy study on operating In-Sn-O-channel ferroelectric-gate thin-film transistors
P. T. Tue, T. Miyasako, E. Tokumitsu, T. Shimoda
Journal of Applied Physics, 115, 10, -, 2014
◆書籍
Oxide-Channel Ferroelectric-Gate Thin Film Transistors with Nonvolatile Memory Function
“Ferroelectric-Gate Field Effect Transistor Memories”,Springer, 2016., 2016
Applications of Oxide Channel Ferroelectric-Gate Thin Film Transistors
“Ferroelectric-Gate Field Effect Transistor Memories”, Springer, 2016., 2016
電子物性・材料の事典
朝倉書店, 2006
◆講演・口頭発表
Coating properties of chemical solution processed MoS2 thin films on various oxides
2017 European Materials Research Society (E-MRS) Spring Meeting, Strasbourg, France, May 22-26, 2017. paper Q.PM.4, 2017
Chemical Solution Process of In-Based Oxides and MoS2 for Thin Film Transistors
The 6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017), June 18-321, 2017, Fukui, paper PA2-1-1, 2017
Direct Imprinting of Oxide Precursor Gel for New Fabrication Process of Thin Film Transistors
The 6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017), June 18-321, 2017, Fukui, paper PO3-47, 2017
Investigation of Nb-Zr-O thin film using sol-gel coating
82016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2016), paper B3-3(oral) July 4 - 6, 2016Hakodate Kokusai Hotel, Hakodate, Japan, 2017
Fabrication of MoS2 thin films on oxide-dielectric-covered substrates
Compound Semiconductor Week, June 26-30, 2016 Toyama International Conference Center, Toyama paper MoP-ISCS-121, 2017

■担当講義

Advanced Device Physics(E), Device Physics, 先端デバイス特論(E), デバイス物理特論

■学外活動

◆所属学会
応用物理学会, 電子情報通信学会, IEEE, Materials Research Society
◆学術貢献活動
Japan-Korea Joint Symposium, Recent progress and future prospects of functional 2-dimensional materials , 2016 , Tokyo Institute of Technology. O-okayama, Tokyo
2015 Fall Meeting of Materials Research Society, Symposium KK Materials and Technology for Non-Volatile Memories , 2015 - 2015 , Hynes Convention Center, Boston, USA
The 5th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies , 2015 - 2015 , TOKI MESSE Niiigata Convention Center, Niigata, Japan