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MIZUTA, Hiroshi Vice-President, Distinguished Professor, Professor, Director of Research Center for Empathetic and Symbiotic Technology with Nature
Materials Science, Sustainable Innovation, Research Center for Empathetic and Symbiotic Technology with Nature

Misc

19 items
Electrical conductance of very narrow graphene nanoribbon with zigzag edge
Liu Chunmeng, Zhang Xiaobin, Zhang Jiaqi, Manoharan Muruganathan, 水田博, 水田博, 大島羲文
日本表面真空学会学術講演会要旨集(Web), 2020, -, 2020
In-situ Electrical Conductance Measurement of Suspended Graphene Nanoribbon by Transmission Electron Microscopy
LIU Chunmeng, Zhang Xiaobin, Muruganathan Manoharan, 水田博, 水田博, 大島義文
日本表面真空学会学術講演会要旨集(Web), 2019, -, 2019
Fabrication of nanopores in graphene using electron beam
Zhang Xiaobin, Muruganathan Manoharan, 水谷加奈子, Schmidt Marek E., 水田博, 大島義文
日本表面真空学会学術講演会要旨集(Web), 2019, -, 2019
Conductivity Response of Pristine and Coated Graphene
AGBONLAHOR Osazuwa Gabriel, MURUGANATHAN Manoharan, HATTORI Masashi, SHIMOMAI Kenichi, MIZUTA Hiroshi, MIZUTA Hiroshi
応用物理学会秋季学術講演会講演予稿集(CD-ROM), 80th, -, 2019
グラフェンナノデバイス技術による超高感度ガスセンサ/スイッチ
水田博, アグボンラホール ガブリエル, 宮下寛也, ムルガナタン マノハラン, 槇恒, 恩田陽介, 服部将志, 下舞賢一, 関根嘉香
粉体粉末冶金協会講演大会(Web), 2019, -, 2019
透過電子顕微鏡その場観察によるグラフェンナノリボン電気伝導計測
大久保諒, LIU Chunmeng, ZHANG Xiaobin, SCHMIDT Marek. E, MURUGANATHAN Manoharan, 水田博, 大島義文
日本表面真空学会学術講演会講演要旨集, 2018, 191-, 2018
サスペンデッドグラフェンナノリボンのデバイス構造の作製
水谷加奈子, ZHANG Xiaobin, SCHMIDT Marek E., MURUGANATHAN Manoharan, 水田博, 水田博, 大島義文
応用物理学会秋季学術講演会講演予稿集(CD-ROM), 78th, -, 2017
Fabrication and characterization of graphene single carrier transistor
IWASAKI Takuya, MURUGANATHAN Manoharan, MIZUTA Hiroshi
Technical report of IEICE. SDM, 114, 443, 69-73, 2015
Low pull-in voltage graphene nanoelectromechanical switch
SUN Jian, KANETAKE Nozomu, CHIKUBA Takuo, MURUGANATHAN Manoharan, MIZUTA Hiroshi
Technical report of IEICE. SDM, 114, 443, 39-43, 2015
Fabrication and characterization of graphene single carrier transistor
IWASAKI Takuya, MURUGANATHAN Manoharan, MIZUTA Hiroshi
IEICE technical report. Electron devices, 114, 442, 69-73, 2015
Electron-tunneling operation of single-dopant-atom transistors at elevated temperature : Toward room temperature operation
MORARU Daniel, HAMID Earfan, SAMANTA Arup, ANH Le The, MIZUNO Takeshi, MIZUTA Hiroshi, TABE Michiharu
IEICE technical report. Electron devices, 113, 39, 65-70, 2013
Ab initio Analysis of Electronic States for Single Phosphorous Dopants in Silicon Nanoscale Transistors
KUZUYA Yohei, MORARUI Daniel, MIZUNO Takeshi, TABE Michiharu, MIZUTA Hiroshi
IEICE technical report. Electron devices, 111, 425, 7-11, 2012
Influence of nanocrystal size on conduction mechanism across silicon nanocrystals
Zhou Xin, kouichi usami, M. A. Rafiq, H. Mizuta, Y. Tsuchiya, S. Oda
Journal of Applied Physics, 104, 2, 24518-, 2009
MOCVD法によるPrシリケートゲート絶縁膜のN2アニール効果の検討
古川亮介, 古川亮介, 須藤貴也, 土屋良重, 野平博司, 水田博, 丸泉琢也, 白木靖寛, 小田俊理
応用物理学会学術講演会講演予稿集, 67th, 2, -, 2006
High-speed and non-volatile nano electro-mechanical memory incorporating Si quantum dots
Y. Tsuchiya, K. Takai, N. Momo, T. Nagami, S. Yamaguchi, T. Shimada, H. Mizuta, S. Oda
AIP Conference Proceedings, 772, 1589-1590, 2005
Magnetoelectric device
Tsukagoshi Kazuhito, Alphenaar Bruce William, Mizuta Hiroshi
-, 2004
3次元フォトニック結晶構造Si量子ドットレーザの提案
筆宝大平, 水田博, 小田俊理
第65回応用物理学会学術講演会, -, 2004
Structural and Electrical Properties of Praseodymium Silicate Ultrathin Gate Dielectrics Grown by MOCVD
Hirotsugu Fujita, Yoshishige Tsuchiya, Hiroshi Mizuta, Hiroshi Nohira, Takeo Hattori, Shunri Oda
CDROM, 19-20, 2004
Collaboration between Hitachi Cambridge Laboratory and University of Cambridge-Realisation of An Embedded Laboratory in The UK University-
MIZUTA Hiroshi
化学と工業 = Chemistry and chemical industry, 52, 3, 268-271, 1999