Nanoscale Graphene-Based Environmental Gas Sensing: Nanotechnology Characterization Tools for Environment, Health, and Safety
共著, Springer, 2019
Growth and characterisation of Ge nanowires by chemical vapour deposition
pp. 487-508, In Tech ISBN 978-953-307-318-7, 2011
NEMSとナノデバイス (NEMS and nanodevices)
共著, 108, 121, ナノシリコンの最新技術と応用展開 (Developing Nanosilicon Technology and Device Applications) 108-121, 2010
ＬＳＩ技術者のための親切な電磁気学 相対性理論と量子物理学（翻訳）
丸善株式会社, 2005
Silicon Nanoelectronics, Ballistic Transport in Silicon Nanostructures
CRC Press, 2005
実験化学講座２８ ナノテクノロジーの化学 単一電子デバイス
丸善株式会社, 2005
Silicon Nanoelectronics, Ballistic Transport in Silicon Nanostructures
CRC Press, 2005
Electron transport in nanocrystalline silicon
Transworld Research NetworkTransworld Research Network, 2004
Single-electron logic based on multiple-tunnel junctions
Research SignpostResearch Signpost, 2004
Electron transport in nanocrystalline silicon
Transworld Research NetworkTransworld Research Network, 2004
Single-electron logic based on multiple-tunnel junctions
Research SignpostResearch Signpost, 2004
“Single-electron charging phenomena in nano/polycrystalline silicon point-contact transistors (Invited Paper)”, Polycrystalline Semiconductors VII – Bulk Materials, Thin Films, and Devices, T. Sameshima, T. Fuyuki, H.P. Strunk, J.H. Werner eds., in Ser・・・
Scitech Publ., Uettikon am See, SwitzerlandScitech Publ., Uettikon am See, Switzerland, 2003
Effects of oxidation and annealing temperature on grain boundary properties in polycrystalline silicon probed using nanometer-scale point-contact devices”, Polycrystalline Semiconductors VII – Bulk Materials, Thin Films, and Devices, T. Sameshima, T. F・・・
Scitech Publ., Uettikon am See, SwitzerlandScitech Publ., Uettikon am See, Switzerland, 2003
“Single-electron charging phenomena in nano/polycrystalline silicon point-contact transistors (Invited Paper)”, Polycrystalline Semiconductors VII – Bulk Materials, Thin Films, and Devices, T. Sameshima, T. Fuyuki, H.P. Strunk, J.H. Werner eds., in Ser・・・
Scitech Publ., Uettikon am See, SwitzerlandScitech Publ., Uettikon am See, Switzerland, 2003
Effects of oxidation and annealing temperature on grain boundary properties in polycrystalline silicon probed using nanometer-scale point-contact devices”, Polycrystalline Semiconductors VII – Bulk Materials, Thin Films, and Devices, T. Sameshima, T. F・・・
Scitech Publ., Uettikon am See, SwitzerlandScitech Publ., Uettikon am See, Switzerland, 2003
The Physics and Applications of Resonant Tunnelling Diodes
Cambridge University PressCambridge University Press, 1995
The Physics and Applications of Resonant Tunnelling Diodes
Cambridge University PressCambridge University Press, 1995
Nitrogen Ion Microscopy
InTech,
Inter-band Current Enhancement by Dopant-Atoms in Low-Dimensional pn Tunnel Diodes
Springer International Publishing,
NEMS技術とフォノンエンジニアリング(『マイクロ・ナノスケールの次世代熱制御技術 フォノンエンジニアリング』)
NTS出版,
Plasma Etching of Graphene (Encyclopedia of Plasma Technology)
Taylor & Francis,
NEMS devices (Nanoscale Silicon Devices)
CRD Press,
Ultrasensitive in-plane resonant nanoelectromechanical sensors’, Nanoscale Sensors (Lecture Notes in Nanoscale Science and Technology)
ISBN 978-3319027715, pp.245-276, Springer, 2014,