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TAKAMURA, Yukiko Professor
Materials Science, Nanomaterials and Devices, Center for Nano Materials and Technology

Misc

17 items
ZrB2(0001)薄膜表面上の二次元Ge二重三角格子
深谷有喜, 𠮷信淳, アントワーヌ・フロランス, 高村(山田)由起子
PHOTON FACTORY NEWS, 39, 3, 24-27, 2021
In-situ TEM observation of electrical conductance changes in GaSe multilayers by electron irradiation
福本航大, LIU C., 新田寛和, FLEURENCE Antoine, 高村(山田)由起子, 大島義文
応用物理学会春季学術講演会講演予稿集(CD-ROM), 68th, -, 2021
Ge(111)基板上にMBE成長したGaSe薄膜の平面STM・STEM観察
CHEN Tongmin, 米澤隆宏, 村上達也, 東嶺孝一, FLEURENCE Antoine, 大島義文, 高村(山田)由起子
応用物理学会春季学術講演会講演予稿集(CD-ROM), 67th, -, 2020
MBE growth of layered group-3 monochalcogenide thin films with non-prismatic monolayer structure
米澤隆宏, 村上達也, 東嶺孝一, CHEN Tongmin, 新田寛和, 久瀬雷矢, FLEURENCE Antoine, 大島義文, 高村(山田)由起子
応用物理学会春季学術講演会講演予稿集(CD-ROM), 67th, -, 2020
Electronic structure analysis of two-dimensional materials: Concerted collaboration of experiment and theory in silicene research
Yukiko YAMADA-TAKAMURA, Taisuke OZAKI
OYO BUTURI, 86, 6, 488-492, 2017
8aAS-11 Novel two-dimensional silicon and germanium allotropes : a first-principles study
Gimbert Florian, Lee Chi-Cheng, Friedlein Rainer, Fleurence Antoine, Yamada-Takamura Yukiko, Ozaki Taisuke
Meeting abstracts of the Physical Society of Japan, 69, 2, 646-646, 2014
8aAS-2 Interaction of NO with the silicene/ZrB_2/Si(111) surface
Yoshinobu J., Yoshimoto S., Mukai K., Shimizu S., Koitaya T., Noritake H., Yamada-Takamura Y., Fleurence Antoine, Friedlein Rainer
Meeting abstracts of the Physical Society of Japan, 69, 2, 644-644, 2014
Silicene: the chemistry of monolayer Si nanosheet with π electrons
R. Friedlein, Y. Yamada-Takamura
Chemistry and Chemical Industry, 66, 11, 900-902, 2013
Silicene: Graphene made of silicon atoms?
Y. Yamada-Takamura, A. Fleurence, R. Friedlein, T. Ozaki
BUTSURI, 68, 5, 305-308, 2013
23aJB-7 First-principles study of Si mono-layer on ZrB_2
Ozaki T., Kawai H., Fleurence Antoine, Friedlein Rainer, Yamada-Takamura Y.
Meeting abstracts of the Physical Society of Japan, 66, 2, 931-931, 2011
25pTG-4 First-principles study electron structures of Si mono-layer on ZrB_2
Kawai H., Ozaki T., Fleurence Antoine, Friedlein Rainer, Yamada-Takamura Y.
Meeting abstracts of the Physical Society of Japan, 66, 1, 906-906, 2011
Surface studies of nitride thin films using scanning probe microscopy
Y. Yamada-Takamura, Z. T. Wang, Y. Fujikawa, T. Sakurai
OYO BUTURI, 76, 5, 499-504, 2007
24aYH-3 Growth of GaN on silicon via ZrB_2 buffer layer
Yamada-Takamura Yukiko, Wang Z.T., Fujikawa Y., Tsong I.S.T., Sakurai T.
Meeting abstracts of the Physical Society of Japan, 61, 2, 732-732, 2006
Growth of mono-polar GaN on Si(111) via epitaxial ZrB2 buffer layer
Yukiko Yamada-Takamura, Z. T. Wang, Y. Fujikawa, T. Sakurai
BUTSURI, 61, 7, 521-524, 2006
Nanoindentation characterization method for hard thin films
Yukiko Takamura
The Tribology, 16, 9, 19-21, 2002
HRTEM observation of phase evolution in vapor deposited cubic boron nitride film
Yukiko Yamada-Takamura, Hideki Ichinose, Toyonobu Yoshida
Materia Japan, 40, 12, 1033-1033, 2001
Vapor deposited c-BN films and their mechanical properties
Y Yamada-Takamura, T Yoshida
JOURNAL OF JAPANESE SOCIETY OF TRIBOLOGISTS, 44, 9, 673-679, 1999