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AKABORI, Masashi Associate Professor
Materials Science, Nanomaterials and Devices, Research Center for Empathetic and Symbiotic Technology with Nature, Center for Nano Materials and Technology

Misc

26 items
Turbostratic Stacking Effect in Multilayer Graphene on the Electrical Transport Properties
Ryota Negishi, Chaopeng Wei, Yao Yao, Yui Ogawa, Masashi Akabori, Yasushi Kanai, Kazuhiko Matsumoto, Yoshitaka Taniyasu, Yoshihiro Kobayashi
physica status solidi (b), 257, 2, 1900437-1900437, 2020
Aspect Ratio Dependence of Magnetization Switching in CoFe Nanolayers Patterned on GaAs (001) Substrates
R. Horiguchi, K. Teramoto, Y. Adachi, M. Akabori, S. Hara
Collected Abstract of the 8th International Symposium on Control of Semiconductor Interfaces (ISCSI-VIII), Sendai, Japan, November 27-30, 2019, WP2-20., 53-54, 2019
Thickness and Aspect Ratio Dependences of Magnetic Domain Structures in Patterned CoFe Thin Films on GaAs (001) Substrates
K. Teramoto, R. Horiguchi, Y. Adachi, M. Akabori, S. Hara
Collected Abstract of the 2019 International Conference on Solid State Devices and Materials (SSDM 2019), Nagoya, Japan, September 2-5, 2019, PS-8-20., 1-2, 2019
STEMモアレフリンジ法によるInP/InGaAs界面歪み分布計測
陳桐民, 大島義文, 赤堀誠志
応用物理学会春季学術講演会講演予稿集(CD-ROM), 66th, -, 2019
STEM Moire法によるInP/InGaAs/InP構造の歪みと組成分布の評価
CHEN T, 赤堀誠志, 大島義文
応用物理学会秋季学術講演会講演予稿集(CD-ROM), 80th, -, 2019
7pAV-10 Well width dependence of CR in InGaAs/InAIAs QWs
Imanaka Y., Takehana K., Hu K., Hidaka S., Iwase H., Akabori M., Yamada S.
Meeting abstracts of the Physical Society of Japan, 69, 2, 473-473, 2014
Sub-band transport and quantum Hall effect in InGaAs two-dimensional electron gas bilayer system
HIDAKA Shiro, IWASE Hiuma, AKABORI Masashi, YAMADA Syoji, IMANAKA Yasutaka, TAKAMASU Tadashi
IEICE technical report. Electron devices, 113, 176, 49-53, 2013
Fabrication and electrical characterization of in-plane-oriented InAs nanowires by selective area molecular beam epitaxy on GaAs
AKABORI Masashi, MURAKAMI Tatsuya, YAMADA Syoji
IEICE technical report. Electron devices, 113, 176, 55-59, 2013
Rashba Effects in diffusive quantum wires made at high In-content InGaAs/InAlAs
Kakegawa T., Kita T., Akabori S., Yamada S.
Meeting abstracts of the Physical Society of Japan, 58, 2, 575-575, 2003
「InP(111)B基板上のMOVPE選択成長によるInGaAs六角柱アレイの形成」
-, 2001
"Selective Area MOVPE Growth of InGaAs Hexagonal Nano-pillar Array on InP(111)B Masked Substrates"
-, 2001
"Formation of air-bridge type two-dimensional photonic crystals having air hole array grown by selective area metal-organic vapor phase epitaxy"
-, 2001
"Fabrication of two-dimensional photonic crystals consisting of hexagonal pillars and air holes by selective area metal-organic vapor phase epitaxy"
-, 2001
"Formation of AlxGa1-xAs Periodic Array of Micro Hexagonal Pillars and Air Holes by Selective Area Metal-Organic Vapor Phase Epitaxy"
-, 2001
Anisotropic magneto-transport properties of 70 nm-period lateral surface superlattices in high magnetic fields
M Akabori, J Motohisa, T Fukui
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 87, 779-780, 2001
"Selective Area MOVPE Growth of InGaAs Hexagonal Nano-pillar Array on InP(111)B Masked Substrates"
-, 2001
"Dependence of In content of InxGa1-xAs quantum dots grown along GaAs multiatomic steps by MOVPE"
-, 2001
"Formation of air-bridge type two-dimensional photonic crystals having air hole array grown by selective area metal-organic vapor phase epitaxy"
-, 2001
"Fabrication of two-dimensional photonic crystals consisting of hexagonal pillars and air holes by selective area metal-organic vapor phase epitaxy"
-, 2001
"Formation of AlxGa1-xAs Periodic Array of Micro Hexagonal Pillars and Air Holes by Selective Area Metal-Organic Vapor Phase Epitaxy"
-, 2001
Initial Stage of InGaAs Growth on GaAs Multiatomic Steps by MOVPE
LEE Sangyoru, AKABORI Masashi, SHIRAHATA Takahiro, MOTOHISA Junichi, FUKUI Takashi
Extended abstracts of the ... Conference on Solid State Devices and Materials, 2000, 512-513, 2000
Transport through quasi 1DEG channels having periodic potential modulation induced by self-organized GaAs multiatomic steps
M Akabori, K Yamatani, J Motohisa, T Fukui
COMPOUND SEMICONDUCTORS 1999, Vol. 166pp. 215-218, 166, 215-218, 2000
Temperature Dependence of Si Delta-Doping on GaAs Singular and Vicinal Surfaces in Metalorganic Vapor Phase Epitaxy
TAZAKI Chiharu, AKABORI Masashi, MOTOHISA Junichi, FUKUI Takashi
Extended abstracts of the ... Conference on Solid State Devices and Materials, 1999, 546-547, 1999
Characterization of Potential Modulation in Novel Lateral Surface Superlattices Formed on GaAs Multiatomic Steps
YAMATANI Kazuki, AKABORI Masashi, MOTOHISA Junichi, FUKUI Takashi
Extended abstracts of the ... Conference on Solid State Devices and Materials, 1998, 330-331, 1998
Delta-Doping of Si on GaAs Vicinal Surfaces and Its Possibility of Wirelike Incorporation in Metalorganic Vapor Phase Epitaxial Growth
IRISAWA Tomoki, MOTOHISA Junichi, AKABORI Masashi, FUKUI Takashi
Extended abstracts of the ... Conference on Solid State Devices and Materials, 1997, 326-327, 1997
A Novel Electron Wave Interference Device Using Multiatomic Steps on Vicinal GaAs Surfaces Grown by MOVPE : Investigation of Transport Properties
AKABORI Masashi, MOTOHISA Junichi, IRISAWA Tomoki, HARA Shinjiroh, ISHIZAKI Jun-ya, OHKURI Kazunobu, FUKUI Takashi
Extended abstracts of the ... Conference on Solid State Devices and Materials, 1996, 706-708, 1996