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AKABORI, Masashi Associate Professor
Materials Science, Nanomaterials and Devices, Research Center for Empathetic and Symbiotic Technology with Nature, Center for Nano Materials and Technology

Published Papers

98 items
Nonlinearity and temperature dependence of CVD graphene nanoelectromechanical resonator
Alexandro de Moraes Nogueira, Shohei Enomoto, Manoharan Muruganathan, Afsal Kareekunnan, Mohammad Razzakul Islam, Masashi Akabori, Hiroshi Mizuta
Japanese Journal of Applied Physics, 63, 2, -, 2024
Anomalous Random Telegraph Signal in Suspended Graphene with Oxygen Adsorption: Implications for Gas Sensing
Alexandro de Moraes Nogueira, Afsal Kareekunnan, Masashi Akabori, Hiroshi Mizuta, Manoharan Muruganathan
ACS Applied Nano Materials, 6, 18, 17140-17148, 2023
Promotion of the structural repair of graphene oxide thin films by thermal annealing in water-ethanol vapor
Ryota Negishi, Takuya Nakagiri, Masashi Akabori, Yoshihiro Kobayashi
Thin Solid Films, 775, 139841-139841, 2023
Tailoring Magnetic Domains and Magnetization Switching in CoFe Nanolayer Patterns with Their Thickness and Aspect Ratio on GaAs (001) Substrate
Keigo Teramoto, Ryoma Horiguchi, Wei Dai, Yusuke Adachi, Masashi Akabori, Shinjiro Hara
physica status solidi (b), 2100519-2100519, 2022
Room-temperature negative magnetoresistance of helium-ion-irradiated defective graphene in the strong Anderson localization regime
Takuya Iwasaki, Shu Nakamura, Osazuwa G. Agbonlahor, Manoharan Muruganathan, Masashi Akabori, Yoshifumi Morita, Satoshi Moriyama, Shinichi Ogawa, Yutaka Wakayama, Hiroshi Mizuta, Shu Nakaharai
Carbon, 175, 87-92, 2021
One-pot synthesis of manganese oxide/graphene composites via a plasma-enhanced electrochemical exfoliation process for supercapacitors
Minh Nhat Dang, Thanh Hai Nguyen, To Van Nguyen, Tran Viet Thu, Hoang Le, Masashi Akabori, Nobuaki Ito, Hai Yen Nguyen, Trong Lu Le, Tuan Hong Nguyen, Van Thao Nguyen, Ngoc Hong Phan
Nanotechnology, 31, 34, 345401-345401, 2020
Epitaxial growth and characterization of Cr-doped ZnSnAs2 thin films on InP substrates
Hiroto Oomae, Kai Sato, Miyuki Shinoda, M. I. Faris bin Ishak, Hideyuki Toyota, Masashi Akabori, Hidetoshi Kizaki, Shinichi Nakamura, Joel T. Asubar, Naotaka Uchitomi
Japanese Journal of Applied Physics, 59, 3, 030601-030601, 2020
Spin injection and detection in MnAs/GaAs/InAs hybrid system on GaAs(111)B through lateral non-local spin valve measurement at varied temperature
Md. Earul Islam, Kazuki Hayashida, Masashi Akabori
AIP Advances, 9, 11, 115215-115215, 2019
Strain mapping at the interface of InP/In x Ga1-x As/InP as measured by the scanning transmission electron microscope-moiré fringe method
Tongmin Chen, Masashi Akabori, Yoshifumi Oshima
Applied Physics Express, 12, 10, 105504-105504, 2019
Turbostratic multilayer graphene synthesis on CVD graphene template toward improving electrical performance
Wei Chaopeng, Negishi Ryota, Ogawa Yui, Akabori Masashi, Taniyasu Yoshitaka, Kobayashi Yoshihiro
JAPANESE JOURNAL OF APPLIED PHYSICS, 58, SI, SIIB04-SIIB04, 2019
Direct (hetero)arylation polymerization for the synthesis of donor-acceptor conjugated polymers based on N-benzoyldithieno [3,2-b:2 ',3 '-d]pyrrole and diketopyrrolopyrrole toward organic photovoltaic cell application
Nguyen Tam H, Nguyen Loc T, Nguyen Huy T, Phan Ngoc-Lan T, Nguyen Viet Q, Nguyen Le-Thu T, Mai Ha Hoang, Hai Le Tran, Mai Phong T, Murata Hideyuki, Aziz Mohd, Zaidan bin Abdul, Akabori Masashi, Ha Tran Nguyen
POLYMER INTERNATIONAL, 68, 10, 1776-1786, 2019
Fractional quantum Hall effects in In0.75Ga0.25As bilayer electron systems observed as "Finger print"
Yamada Syoji, Fujimoto Akira, Hidaka Siro, Akabori Masashi, Imanaka Yasutaka, Takehana Kanji
SCIENTIFIC REPORTS, 9, -, 2019
Chemical Simultaneous Synthesis Strategy of Two Nitrogen-Rich Carbon Nanomaterials for All-Solid-State Symmetric Supercapacitor
Rashmi Chandrabhan Shende, Manoharan Muruganathan, Hiroshi Mizuta, Masashi Akabori, Ramaprabhu Sundara
ACS Omega, 3, 12, 17276-17286, 2018
Thermoelectric Properties and Carrier Localization in Ultrathin Layer of Nb-Doped MoS2
Pham Xuan Thi, Masanobu Miyata, Huynh Van Ngoc, Pham Tien Lam, Nguyen Thanh Tung, Manoharan Muruganathan, Phan Trong Tue, Masashi Akabori, Dam Hieu Chi, Hiroshi Mizuta, Yuzuru Takamura, Mikio Koyano
Physica Status Solidi (B) Basic Research, 255, 9, -, 2018
Three−dimensional lattice rotation in GaAs nanowire growth on hydrogen−silsesquioxane covered GaAs (001) using molecular beam epitaxy
Dat Q. Tran, Huyen T. Pham, Koichi Higashimine, Yoshifumi Oshima, Masashi Akabori
Physica E: Low-Dimensional Systems and Nanostructures, 99, 58-62, 2018
In-plane isotropic magnetic and electrical properties of MnAs/InAs/GaAs(111)B hybrid structure
Md. Earul Islam, Masashi Akabori
Physica B: Condensed Matter, 532, 95-98, 2018
Enhanced ferromagnetism of ZnO@Co/Ni hybrid core@shell nanowires grown by electrochemical deposition method
Huyen T. Pham, Tam D. Nguyen, Md. Earul Islam, Dat Q. Tran, Masashi Akabori
RSC Advances, 8, 2, 632-639, 2018
Nitrogen Gas Field Ion Source (GFIS) Focused Ion Beam (FIB) Secondary Electron Imaging: A First Look
Marek E. Schmidt, Anto Yasaka, Masashi Akabori, Hiroshi Mizuta
MICROSCOPY AND MICROANALYSIS, 23, 4, 758-768, 2017
Interaction study of nitrogen ion beam with silicon
Marek E. Schmidt, Xiaobin Zhang, Yoshifumi Oshima, Le The Anh, Anto Yasaka, Teruhisa Kanzaki, Manoharan Muruganathan, Masashi Akabori, Tatsuya Shimoda, Hiroshi Mizuta
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 35, 3, -, 2017
Structural, optical and electrical properties of well-ordered ZnO nanowires grown on (111) oriented Si, GaAs and InP substrates by electrochemical deposition method
Huyen T. Pham, Tam D. Nguyen, Dat Q. Tran, Masashi Akabori
MATERIALS RESEARCH EXPRESS, 4, 5, -, 2017
Growth and magnetic properties of MnAs/InAs hybrid structure on GaAs(111)B
Md. Earul Islam, Masashi Akabori
JOURNAL OF CRYSTAL GROWTH, 463, 86-89, 2017
Interaction study of nitrogen ion beam with silicon
Schmidt Marek E, Zhang Xiaobin, Oshima Yoshifumi, Anh Le The, Yasaka Anto, Kanzaki Teruhisa, Muruganathan Manoharan, Akabori Masashi, Shimoda Tatsuya, Mizuta Hiroshi
Journal of Vacuum Science & Technology B, 35, 3, -, 2017
Characterization of spin-orbit coupling in gated wire structures using Al2O3/In0.75Ga0.25As/In0.75Al0.25As inverted heterojunctions
Takahiro Ohori, Masashi Akabori, Shiro Hidaka, Syoji Yamada
JOURNAL OF APPLIED PHYSICS, 120, 14, -, 2016
Band-like transport in highly crystalline graphene films from defective graphene oxides
R. Negishi, M. Akabori, T. Ito, Y. Watanabe, Y. Kobayashi
SCIENTIFIC REPORTS, 6, -, 2016
21aAG-4 Measurement of resonant Hall effect in InGaAs 2DEG bilayer system
Yamada S., Fujimoto A., Soeda Y., Akabori M.
Meeting Abstracts of the Physical Society of Japan, 71, 1345-1345, 2016
21aAG-5 Subbnad transport and quantum Hall effect in surface inversion layer InGaAs/InAlAs 2DEG bilayer
Soeda Y., Akabori M., Fujimoto A., Yamada S., Imanaka Y., Takehana K.
Meeting Abstracts of the Physical Society of Japan, 71, 1346-1346, 2016
Discussion on the spin-Hall effect signals detected in 2DEG bilayer samples realized in InGaAs quantum well
Yamada S., Fujimoto A., Akabori M.
Meeting Abstracts of the Physical Society of Japan, 71, 1203-1203, 2016
Subband properties, spin-orbit interaction and quantum Hall effect in bilayer 2DEG in narrow InGaAs well with a barrier
Yamada S., Fujimoto A., Akabori M., Imanaka Y., Takehana K.
Meeting Abstracts of the Physical Society of Japan, 71, 1202-1202, 2016
Sheet Electron Density Dependence of Electron Mobility Anisotropy in In0.75Ga0.25As/InP Two-Dimensional Electron Gas
Masashi Akabori
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS), -, 2016
Hydrogen intercalation: An approach to eliminate silicon dioxide substrate doping to graphene
Takuya Iwasaki, Jian Sun, Nozomu Kanetake, Takuo Chikuba, Masashi Akabori, Manoharan Muruganathan, Hiroshi Mizuta
Applied Physics Express, 8, 1, -, 2015
17aAE-5 Toward the observation of resonant spin Hall effect in high In-content InGaAs/InAlAs 2DEG bilayer
Yamada S., Fujimoto A., Akabori M.
Meeting Abstracts of the Physical Society of Japan, 70, 1036-1036, 2015
High-In-content InGaAs quantum point contacts fabricated using focused ion beam system equipped with N-2 gas field ion source
Masashi Akabori, Shiro Hidaka, Syoji Yamada, Tomokazu Kozakai, Osamu Matsuda, Anto Yasaka
JAPANESE JOURNAL OF APPLIED PHYSICS, 53, 11, -, 2014
Magneto-transport properties of InAs nanowires laterally-grown by selective area molecular beam epitaxy on GaAs (110) masked substrates
M. Akabori, S. Yamada
PHYSICS OF SEMICONDUCTORS, 1566, 219-220, 2013
Verification of electrical spin injection into InGaAs two-dimensional electron gas from CoFe electrode by four-terminal non-local geometry
S. Hidaka, T. Kondo, M. Akabori, S. Yamada
PHYSICS OF SEMICONDUCTORS, 1566, 329-330, 2013
Realization of In0.75Ga0.25As two-dimensional electron gas bilayer system for spintronics devices based on Rashba spin-orbit interaction
M. Akabori, S. Hidaka, H. Iwase, S. Yamada, U. Ekenberg
JOURNAL OF APPLIED PHYSICS, 112, 11, -, 2012
High-Efficiency Long-Spin-Coherence Electrical Spin Injection in CoFe/InGaAs Two-Dimensional Electron Gas Lateral Spin-Valve Devices
Shiro Hidaka, Masashi Akabori, Syoji Yamada
APPLIED PHYSICS EXPRESS, 5, 11, -, 2012
Electron distribution and scattering in InAs films on low-k flexible substrates
Cong Thanh Nguyen, Hong-An Shih, Masashi Akabori, Toshi-kazu Suzuki
APPLIED PHYSICS LETTERS, 100, 23, -, 2012
Selective area molecular beam epitaxy of InAs on GaAs (110) masked substrates for direct fabrication of planar nanowire field-effect transistors
Masashi Akabori, Tatsuya Murakami, Syoji Yamada
JOURNAL OF CRYSTAL GROWTH, 345, 1, 22-26, 2012
Fabrication and Analysis of AlN/GaAs(001) and AlN/Ge/GaAs(001) Metal-Insulator-Semiconductor Structures
Masahiro Kudo, Hong-An Shih, Masashi Akabori, Toshi-kazu Suzuki
JAPANESE JOURNAL OF APPLIED PHYSICS, 51, 2, -, 2012
Application of Sputtering-Deposited AlN Films to Gate Dielectric for AlGaN/GaN Metal-Insulator-Semiconductor Heterojunction Field-Effect Transistor
Hong-An Shih, Masahiro Kudo, Masashi Akabori, Toshi-kazu Suzuki
JAPANESE JOURNAL OF APPLIED PHYSICS, 51, 2, -, 2012
Growth and Magneto-transport Characterization of Double-doped InGaAs/InAlAs Heterostructures with High Indium Compositions
M. Akabori, K. Morimoto, W. Wei, H. Iwase, S. Yamada
PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 1399, 725-726, 2011
Spring Characteristics of Circular Arc Shaped 3D Micro-cantilevers Fabricated Using III-V Semiconductor Strain-driven Bending Process
T. K. Sasaki, H. Iwase, J. Wang, M. Akabori, S. Yamada
PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 1399, 1067-1068, 2011
Magnetic field dependency of spin-splitting in In0.75Ga0.25As/In0.75Al0.25As two dimensional electron gas with strong Rashba spin-orbit coupling
Syoji Yamada, Shunsaku Nitta, Hiuma Iwase, Masashi Akabori, Yasutaka Imanaka, Tadashi Takamasu
HORIBA INTERNATIONAL CONFERENCE: THE 19TH INTERNATIONAL CONFERENCE ON THE APPLICATION OF HIGH MAGNETIC FIELDS IN SEMICONDUCTOR PHYSICS AND NANOTECHNOLOGY, 334, -, 2011
Influence of silicon doping on the SA-MOVPE of InAs nanowires
Kamil Sladek, Andreas Penz, Karl Weis, Stephan Wirths, Christian Volk, Shima Alagha, Masashi Akabori, Steffi Lenk, Martina Luysberg, Hans Lueth, Hilde Hardtdegen, Thomas Schaepers, Detlev Gruetzmacher
Materials Research Society Symposium Proceedings, 1258, 3-9, 2010
Spin-orbit coupling and phase coherence in InAs nanowires
S. Estevez Hernandez, M. Akabori, K. Sladek, Ch. Volk, S. Alagha, H. Hardtdegen, M. G. Pala, N. Demarina, D. Gruetzmacher, Th. Schaepers
PHYSICAL REVIEW B, 82, 23, -, 2010
LaLuO3 as a high-k gate dielectric for InAs nanowire structures
C. Volk, J. Schubert, M. Schnee, K. Weis, M. Akabori, K. Sladek, H. Hardtdegen, Th Schaepers
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 25, 8, -, 2010
Improved gate-control in InAs nanowire structures by the use of GdScO3 as a gate dielectric
C. Volk, J. Schubert, K. Weis, S. Estevez Hernandez, M. Akabori, K. Sladek, H. Hardtdegen, T. Schaepers
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 100, 1, 305-308, 2010
Electron transport properties of InAs ultrathin films obtained by epitaxial lift-off and van der Waals bonding on flexible substrates
Hayato Takita, Norihiko Hashimoto, Cong Thanh Nguyen, Masahiro Kudo, Masashi Akabori, Toshi-kazu Suzukia
APPLIED PHYSICS LETTERS, 97, 1, -, 2010
MOVPE of n-doped GaAs and modulation doped GaAs/AlGaAs nanowires
K. Sladek, V. Klinger, J. Wensorra, M. Akabori, H. Hardtdegen, D. Gruetzmacher
JOURNAL OF CRYSTAL GROWTH, 312, 5, 635-640, 2010
Strain-enhanced electron mobility anisotropy in InxGa1-xAs/InP two-dimensional electron gases
Masashi Akabori, Thanh Quang Trinh, Masahiro Kudo, Hilde Hardtdegen, Thomas Schaepers, Toshi-kazu Suzuki
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 42, 4, 1130-1133, 2010
Influence of growth temperature on the selective area MOVPE of InAs nanowires on GaAs (111) B using N-2 carrier gas
M. Akabori, K. Sladek, H. Hardtdegen, Th. Schaepers, D. Gruetzmacher
JOURNAL OF CRYSTAL GROWTH, 311, 15, 3813-3816, 2009
Spin-orbit coupling in GaxIn1-xAs/InP two-dimensional electron gases and quantum wire structures
Th Schaepers, V. A. Guzenko, A. Bringer, M. Akabori, M. Hagedorn, H. Hardtdegen
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 24, 6, -, 2009
InxGa1-xAs/InP selective area metal-organic vapor phase epitaxy for non-magnetic semiconductor spintronics
Masashi Akabori, Vitaliy A. Guzenko, Thomas Schaepers, Hilde Hardtdegen
JOURNAL OF CRYSTAL GROWTH, 310, 23, 4821-4825, 2008
Spin-orbit interactions in high In-content InGaAs/InAlAs inverted heterojunctions for Rashba spintronic devices
Hyonkwan Choi, Tomoyasu Kakegawa, Masashi Akabori, Toshi-Kazu Suzuki, Syoji Yamada
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 40, 8, 2823-2828, 2008
Spin-splitting analysis of a two-dimensional electron gas in almost strain-free In(0.89)Ga(0.11)Sb/In(0.88)Al(0.12)Sb by magnetoresistance measurements
M. Akabori, V. A. Guzenko, T. Sato, Th. Schaepers, T. Suzuki, S. Yamada
PHYSICAL REVIEW B, 77, 20, -, 2008
Fabrication of 3D micro-cantilevers based on MBE-grown strained semiconductor layers
Hiuma Iwase, Hyonkwan Choi, Masashi Akabori, Toshi-kazu Suzuki, Syoji Yamada, Daisuke Yamamoto, Toshio Ando
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 40, 6, 2210-2213, 2008
Spin injection in FM/2DEG/FM structures in high-quality In0.75Ga0.25As/In0.75Al0.25As inverted HEMTs
Hyonkwan Choi, Atsuki Nogami, Tomoyasu Kakegawa, Masashi Akabori, Syoji Yamada
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 40, 5, 1772-1774, 2008
Epitaxial lift-off of InGaAs/InAlAs metamorphic high electron mobility heterostructures and their van der Waals bonding on AIN ceramic substrates
Yonkil Jeong, Masanori Shindo, Masashi Akabori, Toshi-kazu Suzuki
APPLIED PHYSICS EXPRESS, 1, 2, -, 2008
Structural, optical, and electrical characterizations of epitaxial lifted-off InGaAs/InAlAs metamorphic heterostructures bonded on AlN ceramic substrates
Y. Jeong, M. Shindo, H. Takita, M. Akabori, T. Suzuki
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9, 5, 9, 2787-2790, 2008
Spin-splitting characterization of an InGaSb 2DEG by using magnetoresistance measurements with tilted magnetic fields
M. Akabori, V. A. Guzenko, T. Kakegawa, T. Sato, Th. Schaepers, T. Suzuki, S. Yamada
PHYSICS OF SEMICONDUCTORS, PTS A AND B, 893, 1271-+, 2007
Spin-orbit interactions in high in-content InGaAs/InAlAs inverted heterojunctions for rashba spintronics devices
Hyonkwan Choi, Yoshihito Kitta, Tomoyasu Kakegawa, Yeonkil Jeong, Masashi Akabori, Toshi-Kazu Suzuki, Syoji Yamada
PHYSICS OF SEMICONDUCTORS, PTS A AND B, 893, 1373-+, 2007
Spin splitting in InGaSb/InAlSb 2DEG having high indium content
Masashi Akabori, Takashi Sunouchi, Tomoyasu Kakegawa, Taku Sato, Toshi-kazu Suzuki, Syoji Yamada
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 34, 1-2, 413-416, 2006
Weak antilocalization measurements on a 2-dimensional electron gas in an InGaSb/InAlSb heterostructure
V. A. Guzenko, M. Akabori, Th. Schaepers, S. Cabanas, T. Sato, T. Suzuki, S. Yamada
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 12, 3, 12, 4227-4230, 2006
Selective-area MOVPE fabrication of GaAs hexagonal air-hole arrays on GaAs(111)B substrates using flow-rate modulation mode
J Takeda, M Akabori, J Motohisa, R Notzel, T Fukui
NANOTECHNOLOGY, 16, 12, 2954-2957, 2005
Spin-polarized transport in adiabatic quantum point contact with strong Rashba spin-orbit interaction
T Kita, T Kakegawa, A Akabori, S Yamada
SOLID STATE COMMUNICATIONS, 136, 8, 479-483, 2005
Channel width dependence of spin polarized transports in NiFe/InGaAs hybrid two-terminal structures
M Akabori, K Suzuki, S Yamada
JOURNAL OF SUPERCONDUCTIVITY, 18, 3, 367-370, 2005
Spin-splitting transport in narrow-gap heterojunction narrow wires
T Kakegawa, M Akabori, S Yamada
JOURNAL OF SUPERCONDUCTIVITY, 18, 2, 229-232, 2005
High-quality two-dimensional electron gas at large scale GaN/AlGaN wafer interface prepared by mass production MOCVD systems
S Yamada, T Ohnishi, T Kakegawa, M Akabori, TK Suzuki, H Sugiura, F Nakamura, E Yamaguchi, H Kawai
SOLID STATE COMMUNICATIONS, 133, 10, 647-649, 2005
Clear spin valve signals in conventional NiFe/In0.75Ga0.25As-2DEG hybrid two-terminal structures
M Akabori, K Suzuki, S Yamada
Physics of Semiconductors, Pts A and B, 772, 1373-1374, 2005
Side-gate control of Rashba spin splitting in a In0.75Ga0.25As/In0.75Al0.25As heterojunction narrow channel: Toward spin-transistor based qubits
T Kakegawa, M Akabori, S Yamada
Physics of Semiconductors, Pts A and B, 772, 1297-1298, 2005
Spin-splitting transport in narrow-gap heterojunction narrow wires
T. Kakegawa, M. Akabori, S. Yamada
Journal of Superconductivity and Novel Magnetism, 18, 2, 229-232, 2005
Channel width dependence of spin polarized transports in NiFe/InGaAs hybrid two-terminal structures
Masashi Akabori, Katsushige Suzuki, Syoji Yamada
Journal of Superconductivity and Novel Magnetism, 18, 3, 367-370, 2005
Study of spin transport in In0.75Ga0.25As/In0.75Al0.25As narrow wires
T Kakegawa, M Akabori, S Yamada
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 5, 3, 309-312, 2004
Spin polarized transports through a narrow-gap semiconductor wire with ferromagnetic contacts formed on InAlAs step-graded buffer layers
M Akabori, S Yamada
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 5, 3, 305-308, 2004
Spin-polarized transport in Rashba quantum point contacts
T Kita, T Kakegawa, M Akabori, S Yamada
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 22, 1-3, 464-467, 2004
High-quality highly mismatched InSb films grown on GaAs substrate via thick AlSb and InxAl1-xSb step-graded buffers
T Sato, M Akabori, S Yamada
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 21, 2-4, 615-619, 2004
InGaAs nano-pillar array formation on partially masked InP(III)B by selective area metal-organic vapour phase epitaxial growth for two-dimensional photonic crystal application
M Akabori, J Takeda, J Motohisa, T Fukui
NANOTECHNOLOGY, 14, 10, 1071-1074, 2003
Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy
P Mohan, F Nakajima, M Akabori, J Motohisa, T Fukui
APPLIED PHYSICS LETTERS, 83, 4, 689-691, 2003
Formation of AlxGa1-xAs periodic array of micro-hexagonal pillars and air holes by selective area MOVPE
J Takeda, M Akabori, J Motohisa, T Fukui
APPLIED SURFACE SCIENCE, 190, 1-4, 236-241, 2002
Dependence on In content of InxGa1-xAs quantum dots grown along GaAs multiatomic steps by MOVPE
T Ishihara, S Lee, M Akabori, J Motohisa, T Fukui
JOURNAL OF CRYSTAL GROWTH, 237, 1476-1480, 2002
Selective area MOVPE growth of two-dimensional photonic crystals having an air-hole array and its application to air-bridge-type structures
M Akabori, J Takeda, J Motohisa, T Fukui
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 13, 2-4, 446-450, 2002
The initial stage of InGaAs growth by MOVPE on multiatomic-stepped GaAs structures
S Lee, M Akabori, T Shirahata, K Takada, J Motohisa, T Fukui
JOURNAL OF CRYSTAL GROWTH, 231, 1-2, 75-81, 2001
Formation of nitrides at the surface of U-Zr alloys
M. Akabori, A. Itoh, T. Ogawa
Journal of Nuclear Materials, 289, 3, 342-345, 2001
Selective incorporation of Si along step edges during delta-doping on MOVPE-grown GaAs (001) vicinal surfaces
J Motohisa, C Tazaki, T Irisawa, M Akabori, T Fukui
JOURNAL OF ELECTRONIC MATERIALS, 29, 1, 140-145, 2000
Effect of growth interruption time and growth temperature on the natural formation of InGaAs/AlGaAs quantum disk structures on GaAs (311)B substrates
T Ogawa, M Akabori, J Motohisa, T Fukui
JOURNAL OF APPLIED PHYSICS, 87, 2, 745-749, 2000
Incorporation mechanism of Si during delta-doping in GaAs singular and vicinal surfaces
Junichi Motohisa, Chiharu Tazaki, Masashi Akabori, Takashi Fukui
Journal of Crystal Growth, 221, 1-4, 47-52, 2000
Large positive magnetoresistance in periodically modulated two-dimensional electron gas formed on self-organized GaAs multiatomic steps
Masashi Akabori, Junichi Motohisa, Takashi Fukui
Physica E: Low-Dimensional Systems and Nanostructures, 7, 3, 766-771, 2000
Formation of 0.5 mu m-period GaAs network structures for two-dimensional photonic crystals by selective area metal-organic vapor phase epitaxy
M Akabori, J Motohisa, T Fukui
2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, 191-196, 2000
Real-time observation of electron-beam induced mass transport in strained InGaAs/AlGaAs layers on GaAs (100) and (311)B substrates
Tomoya Ogawa, Masashi Akabori, Junichi Motohisa, Takashi Fukui
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 38, 1040-1043, 1999
Characterization of potential modulation in novel lateral surface superlattices formed on gaas multiatomic steps
Kazuki Yamatani, Masashi Akabori, Junichi Motohisa, Takashi Fukui
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 38, 2562-2565, 1999
Self organization in InGaAs/AlGaAs quantum disk structures on GaAs (311)B substrates
T. Ogawa, M. Akabori, J. Motohisa, T. Fukui
Microelectronic Engineering, 47, 1, 231-233, 1999
Surface deformation phenomena induced by electron-beam irradiation in strained InGaAs/AlGaAs layers on GaAs (100) and (311)B substrates
T. Ogawa, M. Akabori, J. Motohisa, T. Fukui
Physica B: Condensed Matter, 270, 3-4, 313-317, 1999
Formation and characterization of modulated two-dimensional electron gas on GaAs multiatomic steps grown by metalorganic vapor phase epitaxy
M Akabori, J Motohisa, T Fukui
JOURNAL OF CRYSTAL GROWTH, 195, 1-4, 579-585, 1998
Delta-doping and the possibility of wire-like incorporation of Si on GaAs vicinal surfaces in metalorganic vapor phase epitaxial growth
T Irisawa, J Motohisa, M Akabori, T Fukui
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 37, 3B, 1514-1517, 1998
Wire-like doping of Si atoms at multiatomic steps on GaAs[001] vicinal surfaces by metalorganic vapor phase epitaxial growth
T. Irisawa, J. Motohisa, M. Akabori, T. Fukui
Digest of Papers - Microprocesses and Nanotechnology 1998: 1998 International Microprocesses and Nanotechnology Conference, 1998-July, 301-302, 1998
Surface deformation phenomena induced by electron-beam irradiation in InGaAs/AlGaAs strained layers on GaAs (100) and (311)B substrates
T Ogawa, M Kawase, M Akabori, J Motohisa, T Fukui
1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 607-610, 1998
A novel electron wave interference device using multiatomic steps on vicinal GaAs surfaces grown by metalorganic vapor phase epitaxy: Investigation of transport properties
M Akabori, J Motohisa, T Irisawa, S Hara, J Ishizaki, T Fukui
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 36, 3B, 1966-1971, 1997
Theoretical and experimental investigation of an electron interference device using multiatomic steps on vicinal GaAs surfaces
J. Motohisa, M. Akabori, S. Hara, J. Ishizaki, K. Ohkuri, T. Fukui
Physica B: Condensed Matter, 227, 1-4, 295-298, 1996