Room-temperature negative magnetoresistance of helium-ion-irradiated defective graphene in the strong Anderson localization regime Takuya Iwasaki, Shu Nakamura, Osazuwa G. Agbonlahor, Manoharan Muruganathan, Masashi Akabori, Yoshifumi Morita, Satoshi Moriyama, Shinichi Ogawa, Yutaka Wakayama, Hiroshi Mizuta, Shu Nakaharai
Carbon, 175, 87-92, 2021
One-pot synthesis of manganese oxide/graphene composites via a plasma-enhanced electrochemical exfoliation process for supercapacitors Minh Nhat Dang, Thanh Hai Nguyen, To Van Nguyen, Tran Viet Thu, Hoang Le, Masashi Akabori, Nobuaki Ito, Hai Yen Nguyen, Trong Lu Le, Tuan Hong Nguyen, Van Thao Nguyen, Ngoc Hong Phan
Nanotechnology, 31, 34, 345401-345401, 2020
Epitaxial growth and characterization of Cr-doped ZnSnAs2 thin films on InP substrates Hiroto Oomae, Kai Sato, Miyuki Shinoda, M. I. Faris bin Ishak, Hideyuki Toyota, Masashi Akabori, Hidetoshi Kizaki, Shinichi Nakamura, Joel T. Asubar, Naotaka Uchitomi
Japanese Journal of Applied Physics, 59, 3, 030601-030601, 2020
Direct (hetero)arylation polymerization for the synthesis of donor-acceptor conjugated polymers based on N-benzoyldithieno [3,2-b:2 ',3 '-d]pyrrole and diketopyrrolopyrrole toward organic photovoltaic cell application Nguyen Tam H, Nguyen Loc T, Nguyen Huy T, Phan Ngoc-Lan T, Nguyen Viet Q, Nguyen Le-Thu T, Mai Ha Hoang, Hai Le Tran, Mai Phong T, Murata Hideyuki, Aziz Mohd, Zaidan bin Abdul, Akabori Masashi, Ha Tran Nguyen
POLYMER INTERNATIONAL, 68, 10, 1776-1786, 2019
Thermoelectric Properties and Carrier Localization in Ultrathin Layer of Nb-Doped MoS2 Pham Xuan Thi, Masanobu Miyata, Huynh Van Ngoc, Pham Tien Lam, Nguyen Thanh Tung, Manoharan Muruganathan, Phan Trong Tue, Masashi Akabori, Dam Hieu Chi, Hiroshi Mizuta, Yuzuru Takamura, Mikio Koyano
Physica Status Solidi (B) Basic Research, 255, 9, -, 2018
Interaction study of nitrogen ion beam with silicon Marek E. Schmidt, Xiaobin Zhang, Yoshifumi Oshima, Le The Anh, Anto Yasaka, Teruhisa Kanzaki, Manoharan Muruganathan, Masashi Akabori, Tatsuya Shimoda, Hiroshi Mizuta
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 35, 3, -, 2017
Interaction study of nitrogen ion beam with silicon Schmidt Marek E, Zhang Xiaobin, Oshima Yoshifumi, Anh Le The, Yasaka Anto, Kanzaki Teruhisa, Muruganathan Manoharan, Akabori Masashi, Shimoda Tatsuya, Mizuta Hiroshi
Journal of Vacuum Science & Technology B, 35, 3, -, 2017
Hydrogen intercalation: An approach to eliminate silicon dioxide substrate doping to graphene Takuya Iwasaki, Jian Sun, Nozomu Kanetake, Takuo Chikuba, Masashi Akabori, Manoharan Muruganathan, Hiroshi Mizuta
Applied Physics Express, 8, 1, -, 2015
Influence of silicon doping on the SA-MOVPE of InAs nanowires Kamil Sladek, Andreas Penz, Karl Weis, Stephan Wirths, Christian Volk, Shima Alagha, Masashi Akabori, Steffi Lenk, Martina Luysberg, Hans Lueth, Hilde Hardtdegen, Thomas Schaepers, Detlev Gruetzmacher
Materials Research Society Symposium Proceedings, 1258, 3-9, 2010
Spin-orbit coupling and phase coherence in InAs nanowires S. Estevez Hernandez, M. Akabori, K. Sladek, Ch. Volk, S. Alagha, H. Hardtdegen, M. G. Pala, N. Demarina, D. Gruetzmacher, Th. Schaepers
PHYSICAL REVIEW B, 82, 23, -, 2010
LaLuO3 as a high-k gate dielectric for InAs nanowire structures C. Volk, J. Schubert, M. Schnee, K. Weis, M. Akabori, K. Sladek, H. Hardtdegen, Th Schaepers
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 25, 8, -, 2010
Improved gate-control in InAs nanowire structures by the use of GdScO3 as a gate dielectric C. Volk, J. Schubert, K. Weis, S. Estevez Hernandez, M. Akabori, K. Sladek, H. Hardtdegen, T. Schaepers
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 100, 1, 305-308, 2010
Fabrication of 3D micro-cantilevers based on MBE-grown strained semiconductor layers Hiuma Iwase, Hyonkwan Choi, Masashi Akabori, Toshi-kazu Suzuki, Syoji Yamada, Daisuke Yamamoto, Toshio Ando
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 40, 6, 2210-2213, 2008
Structural, optical, and electrical characterizations of epitaxial lifted-off InGaAs/InAlAs metamorphic heterostructures bonded on AlN ceramic substrates Y. Jeong, M. Shindo, H. Takita, M. Akabori, T. Suzuki
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9, 5, 9, 2787-2790, 2008
Spin-splitting characterization of an InGaSb 2DEG by using magnetoresistance measurements with tilted magnetic fields M. Akabori, V. A. Guzenko, T. Kakegawa, T. Sato, Th. Schaepers, T. Suzuki, S. Yamada
PHYSICS OF SEMICONDUCTORS, PTS A AND B, 893, 1271-+, 2007
Spin-orbit interactions in high in-content InGaAs/InAlAs inverted heterojunctions for rashba spintronics devices Hyonkwan Choi, Yoshihito Kitta, Tomoyasu Kakegawa, Yeonkil Jeong, Masashi Akabori, Toshi-Kazu Suzuki, Syoji Yamada
PHYSICS OF SEMICONDUCTORS, PTS A AND B, 893, 1373-+, 2007
Weak antilocalization measurements on a 2-dimensional electron gas in an InGaSb/InAlSb heterostructure V. A. Guzenko, M. Akabori, Th. Schaepers, S. Cabanas, T. Sato, T. Suzuki, S. Yamada
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 12, 3, 12, 4227-4230, 2006
High-quality two-dimensional electron gas at large scale GaN/AlGaN wafer interface prepared by mass production MOCVD systems S Yamada, T Ohnishi, T Kakegawa, M Akabori, TK Suzuki, H Sugiura, F Nakamura, E Yamaguchi, H Kawai
SOLID STATE COMMUNICATIONS, 133, 10, 647-649, 2005