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HORITA, Susumu Adviser to the President, Professor
Transdisciplinary Sciences, Materials Science, Nanomaterials and Devices

Conference Activities & Talks

122 items
Effect of ammonia gas in annealing process on reduction of residual OH-bonds and improvement of electrical properties of low-temperature silicon oxide films
The 4th International Workshop on Advanced Materials and Devices IWAMD 2023, EMD-I7, 2023
Deposition temperature dependence of amount of residual OH groups in low-temperature Si oxide films after in-situ post-deposition heating
2023年第70回応用物理学会春季学術講演会, 15p-PA04-2,12-063, 2023
Quantitative Evaluation of Low-temperature Si Oxide Films by Derivative FT-IR Spectra
The 29th International Display Workshops(IDW' 22), FMCp3-5L, pp. 361-364., 2022
Evaluation of residual OH groups in low temperature Si oxide films by FT IR differential spectra
第83回応用物理学会秋季学術講演会、23a-P04-2、12-292ページ, 2022
Influence of Substrate Temperature on Crystalline Property of YSZ Thin Films Deposited at Low Temperature by Reactive Sputtering
第83回応用物理学会秋季学術講演会、21p-P16-11、05-187ページ, 2022
Influence of Sputtering Pressure on Crystalline Property of YSZ Thin Films Deposited at Room-temperature by Reactive Sputtering
第69回応用物理学会春季学術講演会、23p-P06-16、05-081ページ, 2022
反応性スパッタ法によりガラス基板上に室温堆積したYSZ 薄膜結晶性の組成依存性
薄膜材料デバイス研究会 第18 回研究集会「結晶成長技術とデバイスの新展開」、12-P06 , pp. 93 - 95., 2021
Oxygen Flow Rate Dependence of Crystalline Property of YSZ Thin Films Deposited at Room-temperature by Reactive Sputtering
第82回応用物理学会秋季学術講演会、 22a-P04-12、05-298ページ, 2021
Study on Deposition Mechanism of SiOx Films Produced by Silicone Oil and Ozone Gas
第81回応用物理学会秋季学術講演会、11a-Z10-5、12-205ページ, 2020
Deposition of Crystallized Yttria Stabilized Zirconia (YSZ) Films on Cellulose Nanopaper (CNP) Substrates at Low Temperature by Reactive Sputtering
第81回応用物理学会秋季学術講演会、10a-Z05-10、05-112ページ, 2020
Mechanism Study on Deposition of SiOx Films Produced by Silicone Oil and Ozone Gas
The 27th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD ’20) P-5, pp. 79 - 82., 2020
Deposition Condition at Low Temperature for Crystallization Enhancement of YSZ Films on Glass Substrates by Reactive Sputtering
The 27th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FP ’20) P-8, pp. 85 - 88.D ’20), 2020
Deposition Condition for High Crystalline Fraction of Yttria-Stabilized Zirconia (YSZ) Films Deposited by Reactive Sputtering at Room Temperature
第67回応用物理学会春季学術講演会 講演、15a-PB1-1, 2020
Reduction of Hydroxyl in the Low-Temperature Si Oxide Films Fabricated under Various Deposition Conditions
第67回応用物理学会春季学術講演会 講演、14a-PA4-5, 2020
Deposition of a crystallized YSZ film on a cellulose nanopaper (CNP)
薄膜材料デバイス研究会第16回研究集会「新時代に向けた薄膜材料のデバイス技術」, 2019
Pre-sputtering Condition for Crystallized Yttria Stabilized Zirconia (YSZ) Film Deposition on Cellulose Nanopaper (CNP) by Reactive Sputtering
第80回応用物理学会秋季学術講演会、21a-C310-7, 05-302ページ, 2019
FT-IR Study on Chemical Bonds of Low-Temperature Si Oxide Films Preserved in Various Conditions
第80回応用物理学会秋季学術講演会、18p-PB2-4, 12-095ページ, 2019
NH3ガスを用いた酸化Si膜残留OH成分除去量の低温アニール条件依存性
第66回応用物理学会春季学術講演会, 2019
Reduction of Residual OH Content in a Low-temperature Si Oxide Film at less than 200 oC
The 25th International Display Workshops(IDW'18) in conjunction with Asia Display 2018, 2018
触媒作用による低温酸化Si膜中残留OH成分の除去
薄膜材料デバイス研究会第15回研究集会, 2018
セルロースナノペーパー(CNP)上への多結晶Si-TFT作製への挑戦--- 基盤技術への取り組みについて ---
第79回応用物理学会秋季学術講演会、20p-144-10, 100000001-196ページ, 名古屋市名古屋国際会議場, 2018
低温(150oC)アニールによる低温酸化Si膜中残留OH成分の除去
第79回応用物理学会秋季学術講演会、20a-PA5-2, 12-228ページ, 名古屋市名古屋国際会議場, 2018
CNPを被覆したガラス基板上への結晶化YSZ薄膜の室温堆積
第65回応用物理学会春季学術講演会, 早稲田大学・西早稲田キャンパス, 2018
Room-Temperature Deposition of a Crystallized Dielectric YSZ Film on Glass Substrate Covered with Cellulose Nanopaper
The 24th International Display Workshops(IDW'17) in conjunction with Asia Display 2017, Sendai, Japan, 2017
トリクロロエチレンによる有機SiガスAPCVD低温酸化Si膜中の残留OH量減少の効果
第78回応用物理学会秋季学術講演会、6a-PA9-4, 福岡国際会議場・国際センター・福岡サンパレス(福岡県、福岡市), 2017
Effect of Trichloroethene (TCE) on Deposition Rate and Film Quality of Low-Temperature SiO2 Films Grown Using Silicone Oil and Ozone Gas
The 24th Inter. Workshop on Active-Matrix Flat Panel Displays and Devices (AM-FPD 17, Ryukoku University Avanti Kyoto Hall, Kyoto, Japan, 2017
Progress of Low-Temperature Fabrication Technologies of Thin Film Transistors for Preservation of GlobalEnvironment
Internationa Conference on Computer, Communication, Chemical, Materials & Electronic Engineering, IC4ME2, Fuculty of Engineeering, University of Rajshahi, 2016
YSZ結晶化誘発層と2 段階パルスレーザ照射法を用いた固相結晶化Si薄膜のTFT特性
第63回応用物理学会春季学術講演会, 東京工業大学 大岡山キャンパス, 2016
Low-Temperature Fabrication of Crystallized Si Films for Display and Solar Cell Applications
2012 IEEE International Conference on Electronics Design, Systems and Applications, Abstract pp.19., Seri Pacific Hotel, Kuala Lumpur, Malaysia, 2012
Passivation Effect of F+Y Monolayer on Yttria-stabilized Zirconia (YSZ) Layers of LTPS
Proc. of the 16th International Display Workshops (IDW'10), FMCp-24, pp.889-892,, Fukuoka International Congress Center, Fukuoka, Japan, 2010
非晶質Si薄膜の固相結晶化に及ぼすイットリア安定化ジルコニア(YSZ)の影響
薄膜材料デバイス研究会第7回研究集会「薄膜デバイスの理解と解析」アブストラクト集、6P12, pp.138-141., なら100年会館(奈良市), 2010
YSZ層上の直接体積Si薄膜の低温結晶化におけるF+Y単分子層のパッシベイション効果
第71回応用物理学会学術講演会, 15a-ZD-9, 13-139ページ。, 長崎市長崎大学文教キャンパス, 2010
Low-temperature Growth of Crystallized Si Film on Yttria-Stabilized Zirconia Stimulation Layer
Proc. of the 15th International Display Workshops (IDW'08), FMC1-1, pp.271-274, World Convention Center Summit, Miyazaki, Japan, 2009
Crystalline Properties of the Low-temperature Polycrystalline Silicon Film on Glass Substrate Deposited By Yttria-Stabilized Zirconia Stimulation Layer Method
薄膜材料デバイス研究会第6回研究集会「如何に作り如何に測るか」、アブストラクト集、2P07, pp.106-109., 京都市龍谷大学大宮学舎, 2009
A New Structure of nanodisk (Stacked Nanodisk) fabricated by bio-nano-process and defect-free neutral beam etching
Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials (SSDM 2009), J-9-4,pp.1366-1367., Miyagi, Japan, 2009
New Functional Device Characteristics with 2-Dimensional Array of Si Nanodisk Fabricated by Combination of Bio-Template and Ultimate Top-down Etching
Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials (SSDM 2009), J-9-3, pp.1364-1365., Miyagi, Japan, 2009
Low-temperature Fabrication of a Crystallized Si Film Deposited on a Glass Substrate using an Yttria-stabilized Zirconia Seed Layer
Material Research Society(MRS) Spring Meeting,(2009), A5.5., San Francisco, U.S.A., 2009
Writing Disturbance-Free of a Ferroelectric Gate Field Effect Transistor Memory with an Intermediate Electrode
Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials (SSDM 2008), P-4-8L, pp.470., Tsukuba, Japan, 2008
中間電極を用いたFET型強誘電体メモリの書込み、読出しパルスの最適化
第69回応用物理学会学術講演会, 3a-K-6, 466ページ。, 愛知県春日井市中部大学, 2008
Effect of Surface Treatment of YSZ Seed Layer on Low-temperature Growth of a Poly-Si Thin Film on a Glass Substrate
Digest of Technical Papers, The 15th International Workshop on Active-Matrix Flat Panel Displays(AM-FPD 08), P-L4, pp.243-244., The National Museum of Emerging Science and Innovation(MIRAIKAN), Tokyo, Japan., 2008
Nondestructive Readout of Integrated Ferroelectric Gate FET Memory with Intermediate Electrode by New Data Writing and Reading Method
International Symposium on Integrated Ferroelectrics ISIF 2008, 5-72-P., Singapore, 2008
Using New Operation Method for Improvement in Nondestructive Readout of Ferroelectric Gate FET Memory with an Intermediate Electrode
International Symposium on Integrated Ferroelectrics ISIF 2008, 5-124-C., Singapore., 2008
中間電極付き強誘電体ゲートメモリにおけるノンリターンドメインとディスターブ現象
第55回応用物理学関係連合講演、 30a-P14-35、580ページ。, 千葉県船橋市日本大学理工学部船橋キャンパス, 2008
Effect of Y2O3 Content in a YSZ Seed Layer on Crystallization of a Low-Temperature-Deposited Si Film
The 15th International Display Workshops (IDW'08),AMDp4-2, pp.639-642, Nigata, Japan, 2008
Material Properties of Low-Temperature Si Oxide Film Formed by Using Silicone Oil and Ozone Gas
Proc. of the 14th International Display Workshops (IDW'07), pp.1865-1868,, Sapporo Convention Center, Sapporo, Japan, 2007
Antireflection Subwavelength Structure Formed by Wet Process Using Nano Particles of Nobel Metal Catalyst
Technical Digest of the 17th Internationa Photovoltaic Science and Engineering Conference (PVSEC-17), 4P-P2-29, pp. 430-431., Fukuoka, Japan, 2007
Antireflection Subwavelength Structure Formed by Wet Process Using Nano Particles of Nobel Metal Catalyst
Technical Digest of the 17th Internationa Photovoltaic Science and Engineering Conference (PVSEC-17), 4P-P2-29, pp. 430-431., Fukuoka, Japan, 2007
Nano-sized Taper Structure Formed by Wet Process Using Catalysis of Gold Nanoparticle
Abs. Material Research Society(MRS) Fall Meeting,(2007), kk9.7,, Boston, MA, U.S.A., 2007
Fabrication of Periodic Arrays of Nano-sized Si and Ni dots on SiO2 Using Linearly Polarized Nd:YAG Pulsed Laser
Abs. Material Research Society(MRS) Fall Meeting,(2007), kk8.9,, Boston, MA, U.S.A., 2007
スピンコートしたジメチルシリコーンオイルと5%オゾンにより300oCで形成された酸化シリコン薄膜へのArエキシマ光照射効果
薄膜材料デバイス研究会第4回研究集会「明日の電子デバイスを支える薄膜新材料」、P-24、アブストラクト集、pp.180-182., 京都市竜谷大学大宮学舎, 2007
中間電極を用いたFET型強誘電体メモリの特性向上
薄膜材料デバイス研究会第4回研究集会「明日の電子デバイスを支える薄膜新材料」、Ib-1、アブストラクト集、pp.32-35., 京都市竜谷大学大宮学舎, 2007
シリコーンオイルとオゾンガスにより200℃で形成した酸化Si膜中の不純物測定
第67回応用物理学会学術講演会, 8a-ZM-2, 829ページ。, 札幌市北海道工業大学, 2007
金シングルナノ微粒子の触媒作用によるシリコンの反射防止サブ波長構造の形成
第67回応用物理学会学術講演会, 6p-L-14, 1484ページ。, 札幌市北海道工業大学, 2007
スピンコート有機ケイ素ポリマーと低濃度オゾンの反応により低温形成した酸化シリコン薄膜へのArエキシマ光照射効果
第67回応用物理学会学術講演会, 6a-P10-36, 869ページ。, 札幌市北海道工業大学, 2007
中間電極を用いた集積化強誘電体ゲートメモリの非破壊読み出しの改善
第67回応用物理学会学術講演会, 4p-ZL-2 , 581ページ。, 札幌市北海道工業大学, 2007
Improvement of Nondestructive Readout of Ferroelectric Gate FET Memory with an Intermediate Electrode by using New Data Writing and Reading Methods
2007 16th IEEE International Symposium on the Applications of Ferroelectrics(IEEE ISAF-2007), 30B-FR5-O2, Technical Proc.,, Nara, Japan., 2007
金シングルナノ微粒子の触媒作用を用いた反射防止サブ波長構造のウエットプロセス形成
次世代の太陽光発電システム第175委員会平成19年度 第4回「次世代の太陽光発電システムシンポジウム」, 仙台市、東北大学さくらホール, 2007
Low Temperature Formation of Si Oxide Thin Film for TFT byReaction of Organosiliconpolymer and Low Concentration Ozone Gas
the International TFT Conference 2007, CNR, Headquarters, Rome, Italy, 2007
直線偏光Nd:YAGレーザーによるシリコンやニッケルのサブミクロンライン及びドットのSiO2上への周期配列形成
レーザー学会学術講演会第27回年次大会、D.レーザープロセシング18aX-7, 宮崎市シーガイヤ, 2007
直線偏光Nd:YAGレーザー照射による溶融結晶化Si薄膜の表面形態及び周期的結晶粒界位置の制御
レーザー学会学術講演会第27回年次大会、D.レーザープロセシング18aX-6, 宮崎市シーガイヤ, 2007
Low-temperature Formation of Si Oxide Film by using Silicone Oiland Ozone Gas
The 13th International Display Workshops(IDW'06), Otsu Prince Hotel, Otsu, Japan, 2006
シリコーンオイルとオゾンによる酸化Si膜の低温形成とその膜質
薄膜材料デバイス研究会第3回研究集会「薄膜デバイスの新展開」, C-3、, 奈良市あすなら会議場, 2006
直線偏光レーザーを用いた半導体や金属の周期性配列サブミクロンドットの形成
薄膜材料デバイス研究会第3回研究集会「薄膜デバイスの新展開」、B-24, 奈良市あすなら会議場, 2006
多結晶YSZ薄膜を用いたSi薄膜の低温結晶化
薄膜材料デバイス研究会第3回研究集会「薄膜デバイスの新展開」、B-9, 奈良市あすなら会議場, 2006
Non-destructive Readout Characteristics of a Polycrystalline Ferroelectric Gate FET Memory with an Intermediate Electrode
The 5th Asian Meeting on Ferroelectrics, O-4-C-04, Tokyo University of Science, Noda, Chiba-ken, JapanUniversity of Science, Noda, Chiba-ken, Japan, 2006
直線偏光Nd:YAGレーザーによるシリコンおよびニッケルの周期性配列サブミクロンドットの形成
第67回応用物理学会学術講演会, 30p-P7-10, 滋賀県草津市立命館大学, 2006
多結晶(111)YSZ薄膜上に堆積した低温結晶化Si薄膜の断面TEM観察
第67回応用物理学会学術講演会, 29p-ZQ-3, 滋賀県草津市立命滋賀県草津市立命館大学館大学, 2006
Fabrication of Polycrystalline Ferroelectric Gate FET Memory with an Intermediate Electrode
15th IEEE International Symposium on the Applications of Ferroelectrics, Sunset Beach, NC, U.S.A., 2006
Operation of a Polycrystalline Ferroelectric Gate FET Memory with an Intermediate Electrode
第23回強誘電体応用会議、27-T-30, コープイン京都, 京都, 2006
abrication of Crystallized Si Film Deposited on aPolycrystalline YSZ Film/Glass Substrate at Low Temperature
Material Research Society(MRS) Spring Meeting, A21.7, San Francisco, U. S. A., 2006
Periodic Alignment of Silicon Dot Fabricated by LinearlyPolarized Nd:YAG Pulse Laser
Material Research Society(MRS) Spring Meeting, A15.3, San Francisco, U. A. S, 2006
直線偏向Nd:YAGレーザーによる規則性配列微細Siドットの形成
電子情報通信学会技術研究報告(シリコン材料・デバイス)、信学技報、Vol 105, No.492, pp.13-17, 奈良先端科学技術大学院大学, 2005
Effect of Multiple Reflection on Periodic Structure of Si Film Crystallized by Linearly Polarized Nd:YAG Laser
Proc. of the 12th International Display workshops (IDW'05), pp. 1191-1194,, Sunport Takamatsu, Takamatsu, Japan, 2005
直線偏光Nd:YAGレーザーを用いた2次元規則性配列微細シリコンドットの形成
薄膜材料デバイス研究会第2回研究集会「低温プロセス技術の再発見」、A-5、アブストラクト、pp.40, 京都市龍谷大学大宮学舎清和館, 2005
Reduction of Random Surface Ridges on an Si Film Crystallized by a Linearly Polarized Nd:YAG Pulse Laser
Digest of Technical Papers, 2005 International Workshop on Active-Matrix Liquid-Crystal Displays(AM-LCD 05), TFTp1-5, pp.179-182., Kanazawa Bunka Hall, Japan, 2005
直線偏光Nd:YAGレーザーによるSi薄膜の溶融結晶化
第52回応用物理学関係連合講演会、30p-R-5, 77 ページ。, さいたま市、埼玉大学工学部, 2005
直線偏光Nd:YAGレーザーによる溶融結晶化poly-Si薄膜の粒界および表面形態の制御
第52回応用物理学関係連合講演会、29a-R-6, 946 ページ。, さいたま市、埼玉大学工学部, 2005
直線偏光Nd:YAGレーザー溶融結晶化Siの広角入射による形成制御
薄膜材料デバイス研究会第1回研究会「TFTのすべて」、PS05、アブストラクト、pp.61, 奈良市,三井ガーデンホテル2F, 2004
Low Temperature Growth of Silicon Oxide Film by Using Ozone-Enriched Gas
薄膜材料デバイス研究会第1回研究会「TFTのすべて」、PR05、アブストラクト、pp.34, 奈良市,三井ガーデンホテル2F, 2004
広角入射による直線偏光Nd:YAGパルスレーザー溶融結晶化poly-Si薄膜の表面形態の改善
第65回応用物理学会学術講演会, 3a-P9-6, 725ページ, 仙台市、東北学院大学, 2004
Formation of Periodic Grain Boundary in an Si Thin Film Crystallized by a Linearly Polarized Nd:YAG Pulse Laser with an Ultra Sonic Oscillator
Abs. Material Research Society(MRS) Spring Meeting,(2004),A9.32, PP.34, San Francisco, U. S. A., 2004
Pulse Number Dependence of Spatial Period of Grain Boundary in Si Thin Film crystallized by linearly Polarized Pulse Laser with High Incident Angle
Proc. of the 10th International Display Workshops (IDW'03), pp.455-458, Fukuoka International Congress Center Fukuoka, Japan, 2003
Fabrication of Poly-Si Thin Film Transistor Using Gate Oxide Layer Formed by Wet Ozone-enriched Oxidation
Proc. of the 10th International Display Workshops (IDW'03), pp.447-450, Fukuoka International Congress Center Fukuoka, Japan, 2003
加湿オゾンSi酸化膜のXPS法によるサブオキサイドの評価
第2回21世紀連合シンポジウム-科学技術と人間ー、論文集pp.307-308, 東海大学代々木校舎、東京, 2003
Improvement in Read Endurance of Ferroelectric Gate Field-Effect Transistor Memory with an Intermediate Electrode
Extended Abs.of the 2003 International Conference on Solid State Device and Material, pp.650-651, Tokyo, Japan, 2003
Characteristics of MOS structure formed by the humid gas mixture of O2 + O3 at low temperature
Digest of Technical Papers, 2003 International Workshop on Active-Matrix Liquid-Crystal Displays(AM-LCD 2003), TFTp1-2, pp.91-94., Kogakuin Univ. Tokyo, Japan, 2003
Influence of the shockwave on an Si thin film crystallized by linearly polarized Nd:YAG pulse laser
Digest of Technical Papers, 2003 International Workshop on Active-Matrix Liquid-Crystal Displays(AM-LCD 2003), TFTp2-5, pp.137-140., Kogakuin Univ. Tokyo, Japan, 2003
Influence of electrode material on ferroelectric hysteresis loop of a PZT film deposited by sputtering
Proc. The 7th International Symp. on Sputtering and Plasma Processes, , AP P-4. pp.491-494., Kanazawa Institute of Technology in Kanazawa, 2003
Si基板上に作製した中間電極を用いた強誘電体メモリの基本特性
第20回強誘電体応用会議、28-T-5, pp.21-22., コープイン京都(京都), 2003
Influence of Crystallisation of a Growing Si Film on a Glass Substrate by Thermal Electron Irradiation
POLYSE 2002, Inter. Conf. on Polycrystalline Semiconductors 2002, Book of Abstract, pp.41, Titel No. GP13., Nara-ken New Public Hall Nara, Japan, 2002
Study on Grain Boundary Formation in an Si Film Crystallized by Laser Induced Periodic Temperature Distribution with a High Incident Angle
POLYSE 2002, Inter. Conf. on Polycrystalline Semiconductors 2002, Book of Abstract, pp.29, Titel No. GP1., Nara-ken New Public Hall Nara, Japan, 2002
Analysis of the Interface between Epitaxial Ir and ZrN Films on Si as a Bottom Electrode for Ferroelectric Capacitor
Abs. The 4th Japan-Korea Conference on Ferroelectrics, P1-40, pp.47., Osaka Univ., Osaka, Japan, 2002
Influence of the Irradiation conditions on an Si film melting-crystallized by a Nd:YAG pulse laser beam with linear polarization
Digest of Technical Papers, 2002 International Workshop on Active-Matrix Liquid-Crystal Displays(AM-LCD 2002), TFTp2-3, pp.141-144., Kogakuin Univ. Tokyo, Japan, 2002
Material Properties of an Epitaxial PZT Film on an Epitaxial Ir/ZrN/(100) Si Substrate for Ferroelectric Memory
Abs. Inter. Joint Conf. On Applications of Ferroelectrics 2002 (IFFF 2002), No.184, 29H-TP1-2P, pp.127., Nara-ken New Public Hall Nara, Japan, 2002
A New Working Principle of Ferroelectric Gate FET Memory with an Additional Electrode
Proc. 23rd Inter. Conf. on Microelectronics (MIEL 2002), pp.513-516, Nis, Yugoslavia, 2002
Numerical Analysis for Lateral Grain Growth of Poly-Si Thin Films Controlled by Laser-Induced Periodic Thermal Distribution
Abs. Material Research Society(MRS) Spring Meeting, A22.5, PP.36., San Francisco, U.S.A., 2002
Influence of the Beam Irradiation Condition with Oblique Incidence on Cyrstallization of an Silicon Film by a Linearly Polarized Pulse Laser
Abs.Material Research Society(MRS) Spring Meeting, A22.1, PP.35., San Francisco、U.S.A., 2002
Improvement of Surface Crystalline Quality of an Epitaxial (100) ZrN Film as a Bottom Electrode for Ferroelectric Capacitor
Material Research Society(MRS) Fall Meeting, Boston, U.S.A., 2001
A New Principle of Ferroelectric Gate FET Memory
1st Inter. Meeting on Ferroelectric Random Access Memories FeRAM 2001, Gotenba, 2001
ZrN/Ir金属バッファ層を用いてSi基板上へのエピタキシャルPZT薄膜の形成
平成13年度科学技術振興調整費「セラミックスインテグレーション技術による新機能性材料創製に関する研究会」第1回BL調査研究会, 2001
Preparation of (100) Ir Film on an HF+Hydrazine treated epitaxial (100)ZrN/(100)Si Structure
13th Inter.Conf.on Crystal Growth and 8th Conf. on Vapor Growth and Epitaxy, Kyoto, 2001
High Deposition Rate of Epitaxial (100) Iridium Film on (100)YSZ/(100)Si Structure by Sputtering
13th Inter.Conf.on Crystal Growth and 8th Conf. on Vapor Growth and Epitaxy, 2001
Study on the Formation of the Periodic Grain Boundary Produced by a Nd:YAG Pulse Laser Beam with Linear Polarization
2001 International Workshop on Active-Matrix Liquid-Crystal Displays(AM-LCD 2001), 2001
Suppression of Oxidation of an epitaxial (100)ZrN Film on Si during the Deposition of the Ir Film
The 6th International Symp. on Sputtering and Plasma Processes, 2001
Ferroelectric Properties of Epitaxial Bi4Ti3O12 Films Deposited on Epitaxial (100)Ir and (100)Pt Films on Si by Sputtering
The 6th International Symp. on Sputtering and Plasma Processes, 2001
HF+ヒドラジン溶液処理をしたエピタキシャル(100)ZrN/(100)Si構造上へのIr薄膜の作製
第18回強誘電体応用会議, 京都, 2001
HF+ヒドラジン溶液処理をしたエピタキシャル(100)ZrN/(100)Si構造上への(100)Ir薄膜の作製
電子情報通信学会,シリコン材料・デバイス研究会, 大阪, 2001
Control of the Grain Boundary Location in a Crystallized Si Film on a Glass Substrate by Pulse Lazer beam with Linearly Polarization
Material Research Society(MRS) Fall Meeting, Boston, U.S.A., 2000
Supression of Oxidation of an Epitaxial (100)ZrN Film on Si during the Deposition of Ir Film
Material Research Society(MRS) Fall Meeting, Boston, U.S.A., 2000
高コヒーレント直線偏光パルスレーザービームによる結晶化Si薄膜の粒界位置制御
電子情報通信学会電子部品・材料研究会, 金沢, 2000
FERROELECTRIC PROPERTIES OF AN EPITAXIAL PZT/Ir/ZrN/Si STRUCTURE BY SPUTTERING
12th IEEE International Symposium on the Application of Ferroelectrics, ISAF 2000, pp.133, Honolulu, Hawaii, Hawaii, 2000
Crystallization of an a-Si film by a Nd:YAG pulse laser beam with linear polarization
2000 International Workshop on Active-Matrix Liquid-Crystal Displays(AM-LCD 2000),Kogakuin Univ. Tokyo,, Kyoto, 2000
エピタキシャルPZT/Ir/ZrN/Si構造のの強誘電体特性
第17回強誘電体応用会議,京都, 京都, 2000
エピタキシャルZrN膜/(100)Si基板上に形成したPZT薄膜の強誘電体特性
電子情報通信学会シリコン材料・デバイス研究会,信学技報,Vol 99, No.670, pp.13-18, 2000
(100)YSZ/(100)Si基板上へのヘテロエピタキシャル(100)Ir及び(001)PZT薄膜の膜質特性
平成11年度広域研究会A「ヘテロエピタキシャル成長技術を用いた新機能デバイスの研究開発」報告書,pp.4-11,財団法人中部科学技術センター, 2000
Heteroepitaxial Growth of Ir/ZrN Layered Electrode on (100)Si Substrate for Ferroelectric Capacitor
Material Research Society(MRS) 1999 Fall Meeting, Abs.Y3.6, pp.440., Boston, U.S.A., 1999
強誘電体薄膜の作製とメモリー応用
北陸共同研究交流会特別講演会-LINK21-, 金沢, 1999
Material properites of heteroepitaxial (001) and (111) PZT films on Si substrates prepared by sputtering
The 1999 Joint International Meeting (196 th Meeting of the Electrochemical Society), Abstract No.1044, in Hawaii, Hawaii, 1999
Low Voltage Saturation of a PZT Film on (100)Ir/(100)YSZ/(100)Si Substrate Structure Prepared by Reactive Sputtering
the 1999 International Conference on Solid State Device and Material, Extended Abs. pp.398-399., Tokyo, 1999
Heteroepitaxial Growth of PZT Film on (100)Ir/(100)YSZ/(100)Si Substrate Structure Prepared by Reactive Sputtering
The 5th International Symp. on Sputtering and Plasma Processes, Proc. EI 3-2, pp.61-62., Kanazawa, 1999
Improvement of the electrical properites of heteroepitaxial yttria-stabilized zirconia fillms(YSZ) on Si prepared by reactive sputtering
The 5th International Symp. on Sputtering and Plasma Processes, Proc. EI 1-2, pp.3-4., Kanazawa, 1999
Ir/(100)YSZ/(100)Si基板上に作製したエピタキシャルPZT薄膜特性の膜厚依存性
第16回強誘電体応用会議,講演予稿集,27-T-19, pp.61-62, 京都, 1999