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HORITA, Susumu Adviser to the President, Professor
Transdisciplinary Sciences, Materials Science, Nanomaterials and Devices

Published Papers

109 items
Study on residual OH content in low-temperature Si oxide films after in-situ post-deposition-heating (PDH)
Susumu Horita, Di Pu
Japanese Journal of Applied Physics, -, 2023
Deposition Condition at Low Temperature for Crystallization Enhancement of YSZ Films on Glass Substrates by Reactive Sputtering
Jyotish Patidar, Susumu Horita
Proceedings of AM-FPD 2020 - 27th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, 89-92, 2020
Highly effective removal of OH bonds in low-temperature silicon oxide films by annealing with ammonia gas at a low temperature of 175 degrees C
Horita Susumu
JAPANESE JOURNAL OF APPLIED PHYSICS, 58, 3, -, 2019
Investigation on Silicon Oxide Films Grown by Using Silicone Oil and Ozone at Low-Temperature
Sanjida Ferdous, Abu Bakar, Md Ismail, Susumu Horita
International Conference on Computer, Communication, Chemical, Material and Electronic Engineering, IC4ME2 2018, -, 2018
Dependences of deposition rate and OH content on concentration of added trichloroethylene in low-temperature silicon oxide films deposited using silicone oil and ozone gas
Susumu Horita, Puneet Jain
Japanese Journal of Applied Physics, 57, 3, -, 2018
Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials-
Hamada Hiroki, Horita Susumu, Furuta Mamoru, Kimura Mutsumi, Hattori Reiji
JAPANESE JOURNAL OF APPLIED PHYSICS, 57, 3, -, 2018
Nano Electronic Materials FOREWORD
Kuzuhara Masaaki, Ichikawa Musubu, Baba Akira, Fujisawa Hironori, Horita Susumu, Itoh Eiji, Kawae Takeshi, Kimura Mutsumi, Masuda Atsushi, Mori Tatsuo, Okada Hiroyuki, Suematsu Hisayuki, Suzuki Toshikazu, Tani Masahiko, Tsuboi Nozomu, Uchitomi Naotaka, Uraoka Yukiharu, Yamashita Ichiro
JAPANESE JOURNAL OF APPLIED PHYSICS, 57, 2, -, 2018
Effect of trichloroethylene enhancement on deposition rate of low-temperature silicon oxide films by silicone oil and ozone
Susumu Horita, Puneet Jain
JAPANESE JOURNAL OF APPLIED PHYSICS, 56, 8, -, 2017
Active-Matrix Flatpanel Displays and Devices -TFT Technologies and FPD Materials- FOREWORD
Hiroki Hamada
JAPANESE JOURNAL OF APPLIED PHYSICS, 56, 3, -, 2017
Room-temperature deposition of a crystallized dielectric YSZ film on glass substrate covered with cellulose nanopaper
Susumu Horita, Jyotish Patidar, Hitomi Yagyu, Masaya Nogi
Proceedings of the International Display Workshops, 2, 1529-1530, 2017
Effect of Trichloroethene (TCE) on Deposition Rate and Film Quality of Low-Temperature SiO2 Films Grown Using Silicone Oil and Ozone Gas
2017 24TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD), 285-287, 2017
Active-Matrix Flatpanel Displays and Devices-TFT Technologies and FPD Materials FOREWORD
Hiroki Hamada
JAPANESE JOURNAL OF APPLIED PHYSICS, 55, 3, -, 2016
Material properties of pulsed-laser crystallized Si thin films grown on yttria-stabilized zirconia crystallization-induction layers by two-step irradiation method
Mai Thi Kieu Lien, Susumu Horita
JAPANESE JOURNAL OF APPLIED PHYSICS, 55, 3, -, 2016
Nano Electronic Materials FOREWORD
Eisuke Tokumitsu, Musubu Ichikawa, Akira Baba, Hironori Fujisawa, Kazuaki Furukawa, Susumu Horita, Eiji Itoh, Takeshi Kawae, Shinya Kumagai, Atsushi Masuda, Tatsuo Mori, Hiroyuki Okada, Yukinori Ono, Hisayuki Suematsu, Toshi-kazu Suzuki, Yasushi Takemura, Taishi Takenobu, Nozomu Tsuboi
JAPANESE JOURNAL OF APPLIED PHYSICS, 55, 2, -, 2016
Catalytic effect of trichloroethene on deposition rate of silicon oxides films deposited by APCVD using silicone oil and ozone gas
Puneet Jain, Susumu Horita
23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016, 2, 1001-1002, 2016
Improving crystalline quality of polycrystalline silicon thin films crystallized on yttria-stabilized zirconia crystallization-induction layers by the two-step irradiation method of pulsed laser annealing
Mai Thi Kieu Lien, Susumu Horita
JAPANESE JOURNAL OF APPLIED PHYSICS, 54, 3, -, 2015
Active-Matrix Flatpanel Displays and Devices-TFT Technologies and FPD Materials- FOREWORD
Susumu Horita, Mamoru Furuta, Reiji Hattori, Mutsumi Kimura, Toshihiko Toyama
JAPANESE JOURNAL OF APPLIED PHYSICS, 54, 3, -, 2015
High performance and uniformity of poly-Si thin-film transistors using solid-phase crystallization on YSZ layers by two-step PLA method
Mai Thi Kieu Lien, Susumu Horita
Proceedings of the International Display Workshops, 1, 55-56, 2015
Temperature Dependences of Conductivity in Undoped and Doped Poly-Si Thin Films Grown on YSZ Crystallization-Induction Layers by Two-Step Irradiation Method with Pulsed Laser
Mai Lien Thi Kieu, Susumu Horita
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), 225-226, 2015
Effect of the crystallization-induction layer of yttria-stabilized zirconia on the solid state crystallization of an amorphous Si film
Susumu Horita, Tetsuya Akahori
JAPANESE JOURNAL OF APPLIED PHYSICS, 53, 3, -, 2014
Raman spectral analysis of Si films solid-phase-crystallized on glass substrates using pulse laser with crystallization-induction layers of yttria-stabilized zirconia
Mai Thi Kieu Lien, Susumu Horita
JAPANESE JOURNAL OF APPLIED PHYSICS, 53, 3, -, 2014
Active-Matrix Flatpanel Displays and Devices -TFT Technologies and FPD Materials- FOREWORD
Hiroki Hamada, Susumu Horita, Mamoru Furuta, Mutsumi Kimura, Toshihiko Toyama, Toshiaki Tsuchiya
JAPANESE JOURNAL OF APPLIED PHYSICS, 53, 3, -, 2014
Area expansion of crystallized si films on YSZ layers by two-step method in PLA
Mai Thi Kieu Lien, Masayuki Yamano, Tatsuaki Hirata, Shin Ichiro Kuroki, Susumu Horita
21st International Display Workshops 2014, IDW 2014, 1, 259-260, 2014
Improvement of Crystalline Quality of Poly-Si Thin Films Crystallized on YSZ Layers by New Two-Step Irradiation Method with PLA
Mai Thi Kieu Lien, Susumu Horita
2014 21ST INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD), 185-188, 2014
Improving crystalline quality of si thin films solid-phase crystallized on yttria-stablized zirconia layers by pulse laser
Mai Thi Kieu Lien, Susumu Horita
Proceedings of the International Display Workshops, 1, 655-656, 2013
Effect of a stimulation layer on solid-phase crystallization of an amorphous Si film by pulse laser irradiation
Mai Lien Thi Kieu, Kazuhide Mochizuki, Susumu Horita
PROCEEDINGS OF 2013 TWENTIETH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD 13): TFT TECHNOLOGIES AND FPD MATERIALS, 175-176, 2013
Effect of the deposition process on the crystallization of polycrystalline silicon thin film on glass substrate
Sukreen Hana Herman, Akahori Tatsuya, Susumu Horita
International Conference on Electronic Devices, Systems, and Applications, 349-352, 2011
Passivation effect of F+Y monolayer on yttria-stabilized zirconia (YSZ) layers of LTPS
Susumu Horita
IDW'10 - Proceedings of the 17th International Display Workshops, 2, 889-892, 2010
Low-temperature deposition of a polycrystalline Si film on yttria-stabilized zirconia seed layer
Sukreen Hana Herman, Susumu Horita
2010 International Conference on Electronic Devices, Systems and Applications, ICEDSA 2010 - Proceedings, 145-148, 2010
Direct Deposition of a Crystallized Si Thin Film on a YSZ/Glass Substrate at 430 degrees C
Sukreen Hana, Susumu Horita
WORLD CONGRESS ON ENGINEERING, WCE 2010, VOL II, 2, 867-869, 2010
Novel Si Nanodisk Fabricated by Biotemplate and Defect-Free Neutral Beam Etching for Solar Cell Application
Chi-Hsien Huang, Makoto Igarashi, Susumu Horita, Masaki Takeguchi, Yukiharu Uraoka, Takashi Fuyuki, Ichiro Yamashita, Seiji Samukawa
JAPANESE JOURNAL OF APPLIED PHYSICS, 49, 4, -, 2010
Low-Temperature Crystallization of Silicon Films Directly Deposited on Glass Substrates Covered with Yttria-Stabilized Zirconia Layers
Susumu Horita, Sukreen Hana
JAPANESE JOURNAL OF APPLIED PHYSICS, 49, 10, -, 2010
Passivation Effect of F plus Y Monolayer on Yttria-stabilized Zirconia (YSZ) Layers of LTPS
Susumu Horita
IDW'10: PROCEEDINGS OF THE 17TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3, 889-892, 2010
Direct Deposition of a Crystallized Si Thin Film on a YSZ/Glass Substrate at 430 degrees C
Sukreen Hana, Susumu Horita
WORLD CONGRESS ON ENGINEERING, WCE 2010, VOL II, 867-869, 2010
Low-temperature growth of crystallized Si film on yttria-stabilized zirconia stimulation layer
Sukreen Hana, Tatsuya Akahori, Susumu Horita
IDW '09 - Proceedings of the 16th International Display Workshops, 1, 271-274, 2009
Disturb-Free Writing Operation for Ferroelectric-Gate Field-Effect Transistor Memories With Intermediate Electrodes
Susumu Horita, Bui Nguyen Quoc Trinh
IEEE TRANSACTIONS ON ELECTRON DEVICES, 56, 12, 3090-3096, 2009
Enhancement of the crystalline quality of reactively sputtered yttria-stabilized zirconia by oxidation of the metallic target surface
Sukreen Hana, Kensuke Nishioka, Susumu Horita
THIN SOLID FILMS, 517, 20, 5830-5836, 2009
Low Temperature Deposition and Crystallization of Silicon Film on an HF-Etched Polycrystalline Yttria-Stabilized Zirconia Layer Rinsed with Ethanol Solution
Susumu Horita, Hana Sukreen
APPLIED PHYSICS EXPRESS, 2, 4, pp. 04120-1,3-0412013, 2009
Low-Temperature Deposition of Silicon Oxide Film from the Reaction of Silicone Oil Vapor and Ozone Gas
Susumu Horita, Koichi Toriyabe, Kensuke Nishioka
JAPANESE JOURNAL OF APPLIED PHYSICS, 48, 3, pp. 035501-1,7-, 2009
Low-temperature Fabrication of a Crystallized Si Film Deposited on a Glass Substrate using an Yttria-stabilized Zirconia Seed Layer
Sukreen Hana Herman, Susumu Horita
AMORPHOUS AND POLYCRYSTALLINE THIN FILM SILICON SCIENCE AND TECHNOLOGY - 2009, VOL 1153, 1153, -, 2009
Effect of Y2O3 content in a YSZ seed layer on crystallization of a low-temperature-deposited Si film
S. Hana, S. Horita
IDW '08 - Proceedings of the 15th International Display Workshops, 2, 639-642, 2008
Fabrication of periodic arrays of nano-sized Si and Ni dots on SiO 2 using linearly polarized Nd:YAG pulsed laser
Kensuke Nishioka, Susumu Horita
Materials Research Society Symposium Proceedings, 1059, 84-89, 2008
Nano-sized taper structure formed by wet process using catalysis of gold nanoparticle
Kensuke Nishioka, Susumu Horita
Materials Research Society Symposium Proceedings, 1059, 143-148, 2008
Nondestructive Readout of Ferroelectric-Gate Field-Effect Transistor Memory With an Intermediate Electrode by Using an Improved Operation Method
Susumu Horita, Bui Nguyen Quoc Trinh
IEEE TRANSACTIONS ON ELECTRON DEVICES, 55, 11, 3200-3207, 2008
Antireflection subwavelength structure of silicon surface formed by wet process using catalysis of single nano-sized gold particle
Kensuke Nishioka, Susumu Horita, Keisuke Ohdaira, Hideki Matsumura
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 92, 8, 919-922, 2008
Periodic arrays of submicron Si and Ni dots on SiO2 fabricated using linearly polarized Nd : YAG pulsed laser
K. Nishioka, S. Horita
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 91, 2, 235-240, 2008
Periodically aligned submicron lines of silicon and nickel fabricated using linearly polarized Nd : YAG pulse laser
Kensuke Nishioka, Susumu Horita
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46, 7A, 4154-4159, 2007
Surface modification of an amorphous Si thin film crystallized by a linearly polarized Nd : YAG pulse laser beam
Susumu Horita, Hirokazu Kaki, Kensuke Nishioka
JOURNAL OF APPLIED PHYSICS, 102, 1, 013501-, 2007
Periodically aligned submicron dots of silicon and nickel fabricated by irradiation with linearly polarized Nd : YAG pulsed
Kensuke Nishioka, Susumu Horita
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 46, 20-24, L556-L558, 2007
Multireftection effect on formation of periodic surface structure on an Si film melting-crystallized by a linearly polarized Nd : YAG pulse laser beam
Susumu Horita, Hirokazu Kaki, Kensuke Nishioka
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46, 6A, 3527-3533, 2007
Fabrication of crystallized Si film deposited on a polycrystalline YSZ film/glass substrate at 500 degrees C
Susumu Horita, Keisuke Kanazawa, Kensuke Nishioka, Koichi Higashimine, Mikio Koyano
AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY 2006, 910, 577-581, 2007
Fabrication of crystallized Si film deposited on a polycrystalline YSZ film/glass substrate at 500 degrees C
Susumu Horita, Keisuke Kanazawa, Kensuke Nishioka, Koichi Higashimine, Mikio Koyano
AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY 2006, 910, 577-581, 2007
Material properties of low-temperature Si oxide film formed by using silicone oil and ozone gas
Susumu Horita, Kouich Toriyabe, Kensuke Nishioka
IDW '07: PROCEEDINGS OF THE 14TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3, 3, 1865-1868, 2007
Fabrication of Polycrystalline Ferroelectric Gate FET Memory with an Intermediate Electrode
Bui Nguyen Quoc Trinh, Susumu Horita
2006 15th IEEE International Symposium on Applications of Ferroelectrics, 86-89, 2007
Improvement of nondestructive readout of ferroelectric gate FET memory with an intermediate electrode by using new data writing and reading methods
Bui Nguyen Quoc Trinh, Susumu Horita
2007 SIXTEENTH IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2, 58-61, 2007
Periodic alignment of silicon dot fabricated by linearly polarized Nd : YAG pulse laser
Kensuke Nishioka, Susumu Horita
Amorphous and Polycrystalline Thin-Film Silicon Science and Technology 2006, 910, 353-357, 2007
Fabrication of crystallized Si film deposited on a polycrystalline YSZ film/glass substrate at 500 degrees C
Susumu Horita, Keisuke Kanazawa, Kensuke Nishioka, Koichi Higashimine, Mikio Koyano
AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY 2006, 910, 577-581, 2007
Control of preferential orientation of platinum films on RuO2/SiO2/Si substrates by sputtering
Bui Nguyen Quoc Trinh, Susumu Horita
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45, 11, 8810-8816, 2006
Operation of ferroelectric gate field-effect transistor memory with intermediate electrode using polycrystalline capacitor and metal-oxide-semiconductor field-effect transistor
Bui Nguyen Quoc Trinh, Susumu Horita
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45, 9B, 7341-7344, 2006
Low-temperature formation of Si oxide film by using silicone oil and ozone gas
K. Toriyabe, K. Nishioka, S. Horita
IDW '06: PROCEEDINGS OF THE 13TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3, 2, 719-722, 2006
Epitaxial Pt films with different orientations grown on (100)Si substrates by RF magnetron sputtering
S Okamoto, T Watanabe, K Akiyama, S Kaneko, H Funakubo, S Horita
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44, 7A, 5102-5106, 2005
Periodic grain-boundary formation in a poly-Si thin film crystallized by linearly polarized Nd : YAG pulse laser with an oblique incident angle
H Kaki, S Horita
JOURNAL OF APPLIED PHYSICS, 97, 1, pp.014904 1-9-, 2005
Effect of multiple reflection on periodic structure of si film crystallized by linearly polarized Nd : YAG laser
S. Horita, K. Nishioka, H. Kaki
IDW/AD '05: PROCEEDINGS OF THE 12TH INTERNATIONAL DISPLAY WORKSHOPS IN CONJUNCTION WITH ASIA DISPLAY 2005, VOLS 1 AND 2, 1191-1194, 2005
Enhanced scanning ion microprobe image analysis for rough surface samples as an alternative to SIMS depth profiling
S Seki, H Tamura, S Horita, N Ito
SURFACE AND INTERFACE ANALYSIS, 36, 8, 896-899, 2004
Analysis on operation of a F-FET memory with an intermediate electrode
TD Khoa, S Horita
IEEE TRANSACTIONS ON ELECTRON DEVICES, 51, 5, 820-823, 2004
Retention and read endurance characteristics of a ferroelectric gate field effect transistor memory with an intermediate electrode
TD Khoa, S Horita
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43, 4B, 2220-2225, 2004
Study on Operation of a Ferroelectric Gate Field-Effect Transistor Memory with an Intermediate Electrode
T. D. Khoa, S. Horita
EEE Transaction on Electron Devices, Vol.51, No.5, 820-823, 2004
Influence of the beam irradiation conditions on an Si film melting-crystallized by a Nd:YAG pulse laser beam with linear polarization
Yasunori Nakata, Hirokazu Kaki, Susumu Horita
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 43, 5 A, 2630-2635, 2004
Silicon oxide formation for TFTs using humid ozone-enriched gas ambient at low temperature
PN Hai, S Nishio, S Horita
ESSDERC 2004: PROCEEDINGS OF THE 34TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 313-316, 2004
Influence of pre-oxidation of an Ir film on chemical composition and crystal property of a PZT film deposited on the Ir film by sputtering
S Horita, M Shoga
INTEGRATION OF ADVANCED MICRO-AND NANOELECTRONIC DEVICES-CRITICAL ISSUES AND SOLUTIONS, 811, 93-97, 2004
Formation of periodic grain boundary in an Si thin film crystallized by a linearly polarized Nd : YAG pulse laser with an ultra sonic oscillator
H Kaki, T Ootani, S Horita
AMORPHOUS AND NANOCRYSTALLINE SILICON SCIENCE AND TECHNOLOGY- 2004, 808, 283-288, 2004
Analysis of the interface between epitaxial Ir and ZrN films on Si as a bottom electrode for ferroelectric capacitor
S Horita, T Toda, H Kasagawa
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 42, S1142-S1145, 2003
Gate voltage reduction of a ferroelectric gate field-effect transistor memory with an intermediate electrode on data-reading
S Horita, TD Khoa
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 42, 4A, L365-L368, 2003
Influence of thermal electron irradiation on crystallization of a growing Si film on a glass substrate
S Horita, S Miyoshi, O Jaike
POLYCRYSTALLINE SEMICONDUCTORS VII, PROCEEDINGS, 93, 237-241, 2003
Study on grain boundary formation in a Si film crystallized by laser induced periodic temperature distribution with a high incident angle
H Kaki, Y Nakata, S Horita
POLYCRYSTALLINE SEMICONDUCTORS VII, PROCEEDINGS, 93, 355-360, 2003
Enhancement of crystallization of an si film on a quartz substrate by thermal electron irradiation
S Horita, S Miyoshi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 41, 12A, L1396-L1398, 2002
Epitaxial growth of a (101) Pb(ZrxTi1-x)O-3 film on an epitaxial (110) Ir/(100) ZrN/(100) Si substrate structure
S Horita, T Toda, H Kasagawa
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 41, 11B, 6653-6657, 2002
High deposition rate of epitaxial (100) iridium film on (100)YSZ/1 0 0)Si substrate by RF sputtering deposition
TD Khoa, S Horii, S Horita
THIN SOLID FILMS, 419, 1-2, 88-94, 2002
Ferroelectric properties of epitaxial Bi4Ti3O12 films deposited on epitaxial (100) Ir and (100) Pt films on Si by sputtering
S Horita, S Sasaki, O Kitagawa, S Horii
VACUUM, 66, 3-4, 427-433, 2002
A new working principle of ferroelectric gate FET memory with an additional electrode
TD Khoa, S Horita
2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, 2, 513-516, 2002
Improvement of surface crystalline quality of an epitaxial (100)ZrN film as a bottom electrode diffusion barrier for ferroelectric capacitors
S Horita, S Horii, T Toda
FERROELECTRIC THIN FILMS X, 688, 119-124, 2002
Numerical analysis for lateral grain growth of poly-Si thin films controlled by laser-induced periodic thermal distribution
H Kaki, Y Nakata, S Horita
AMORPHOUS AND HETEROGENEOUS SILICON-BASED FILMS-2002, 715, 211-216, 2002
Influence of the beam irradiation condition with oblique incidence on crystallization of an Si film by a linearly polarized pulse laser
Y Nakata, H Kaki, S Horita
AMORPHOUS AND HETEROGENEOUS SILICON-BASED FILMS-2002, 715, 199-204, 2002
Suppression of oxidation of an epitaxial (100)ZrN film on Si during the deposition of Ir film
Sadayoshi Hor, Susumu Horita
Materials Research Society Symposium - Proceedings, 655, -, 2001
Increase of dielectric constant of an epitaxial (100) yttria-stabilized zirconia film on (100) Si substrate deposited by reactive sputtering in the metallic mode
S Horita, T Kuniya
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 40, 11, 6547-6551, 2001
HF and hydrazine monohydrate solution treatment for suppressing oxidation of ZrN film surface
S Horii, T Toda, S Horita
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 40, 9AB, L976-L979, 2001
Crystalline and ferroelectrical properties of heteroepitaxial (100) and (111) Pb(ZrxTi1-x)O-3 films on Ir/(100)(ZrO2)(1-x)(Y2O3)(x)/(100)Si structures
S Horita, S Horii, H Nakajima, S Umemoto
THIN SOLID FILMS, 388, 1-2, 260-270, 2001
Alignment of grain boundary in a Si film crystallized by a linearly polarized laser beam on a glass substrate
S Horita, Y Nakata, A Shimoyama
APPLIED PHYSICS LETTERS, 78, 15, 2250-2252, 2001
Ferroelectric property of an epitaxial PZT/Ir/ZrN/Si structure by sputtering
S Horii, S Horita
PROCEEDINGS OF THE 2001 12TH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, VOLS I AND II, 2, 607-610, 2001
Low voltage saturation of Pb(ZrxTi1-x)O3 films on (100)Ir/(100)(ZrO2)1-x(Y2O3) x/(100)Si substrate structure prepared by reactive sputtering
Sadayoshi Horii, Seiji Yokoyama, Takuji Kuniya, Susumu Horita
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 39, 4, 2114-2118, 2000
Low temperature heteroepitaxial growth of a new phase lead zirconate titanate film on Si substrate with an epitaxial (ZrO2)(1-x)(Y2O3)(x) buffer layer
S Horita, M Aikawa, T Naruse
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 39, 8, 4860-4868, 2000
Low temperature heteroepitaxial growth of a new phase lead zirconate titanate film on Si substrate with an epitaxial (ZrO2)(1-x)(Y2O3)(x) buffer layer
S Horita, M Aikawa, T Naruse
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 39, 8, 4860-4868, 2000
Improvement of the electrical properties of heteroepitaxial yttria-stabilized zirconia (YSZ) films on Si prepared by reactive sputtering
S. Horita, H. Nakajima, T. Kuniya
Vacuum, 59, 2-3, 390-396, 2000
Heteroepitaxial growth of Ir/ZrN layered electrode on (100)Si substrate for ferroelectric capacitor
S Horii, S Yokoyama, S Horita
FERROELECTRIC THIN FILMS VIII, 596, 85-90, 2000
Thickness dependence of material properties of epitaxial Pb(ZrxTi1-x)O3 films on Ir/(100) (ZrO2)1-x(Y2O3)x/(100)Si structures
Sadayoshi Horii, Seiji Yokoyama, Hideki Nakajima, Susumu Horita
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 38, 5378-5382, 1999
Heteroepitaxial growth of PZT film on (100)Ir/(100)YSZ/(100)Si substrate structure prepared by reactive sputtering
S Horita, S Horii
FERROELECTRIC THIN FILMS VII, 541, 351-356, 1999
Enhancement of crystallization of Si films on quartz substrates by electric fields
Susumu Horita, Daisuke Inagaki, Kiyotaka Sato
Thin Solid Films, 343-344, 1-2, 288-291, 1999
Ion incident angle dependence of material properties of a ZrN film on silicon prepared by the ion assisted deposition method
S Horita, H Akahori, M Kobayashi
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 14, 1, 203-209, 1996
HETEROEPITAXIAL GROWTH OF YTTRIA-STABILIZED ZIRCONIA FILM ON SILICON BY REACTIVE SPUTTERING
S HORITA, M MURAKAWA, T FUJIYAMA
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 34, 4A, 1942-1946, 1995
MATERIAL PROPERTIES OF A ZRNX FILM ON SILICON PREPARED BY ION-ASSISTED DEPOSITION METHOD
S HORITA, T TUJIKAWA, H AKAHORI, M KOBAYASHI, T HATA
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 11, 5, 2452-2457, 1993
STUDY OF SUBBOUNDARY GENERATION IN SILICON-ON-INSULATOR FILMS RECRYSTALLIZED BY A PSEUDOLINE ELECTRON-BEAM
S HORITA, K FUKAO, H ISHIWARA
JOURNAL OF APPLIED PHYSICS, 68, 6, 2769-2775, 1990
Reduction of Internal Stress by Compositional Gradient Layer Inserted between TiSi2 and Si
Hata Tomonobu, Tsuchitani Masanobu, Kamiya Kenji, Horita Susumu
Jpn J Appl Phys, 28, 12, L2297-L2300, 1989
CONSIDERATION ON THE VOID GENERATION MECHANISM IN ELECTRON-BEAM RECRYSTALLIZED SILICON-ON-INSULATOR FILMS
S HORITA, H ISHIWARA
JOURNAL OF APPLIED PHYSICS, 65, 5, 2057-2063, 1989
Pseudoline electron beam recrystallization of silicon-on-insulator
Susumu Horita, Hiroshi Ishiwara
Materials Science Reports, 3, 5, 219-275, 1989
PERFORATION SEED STRUCTURE IN ELECTRON-BEAM RECRYSTALLIZED SILICON-ON-INSULATOR FILMS
S HORITA, H ISHIWARA
APPLIED PHYSICS LETTERS, 50, 12, 748-750, 1987
CHARACTERIZATION OF SILICON-ON-INSULATOR FILMS RECRYSTALLIZED BY AN OBLIQUELY SCANNED PSEUDOLINE ELECTRON-BEAM
S HORITA, H ISHIWARA
JOURNAL OF APPLIED PHYSICS, 61, 3, 1006-1014, 1987
Recrstalization of silicon-on-insulator films by a pseudoline electron beam
Hiroshi Ishiwara, Susumu Horita
European Solid-State Device Research Conference, 293-298, 1987
RECRYSTALLIZATION OF SILICON-ON-INSULATOR STRUCTURES BY SINUSOIDALLY-SCANNED ELECTRON-BEAMS
H ISHIWARA, K OHYU, S HORITA, S FURUKAWA
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 24, 2, 126-132, 1985
FORMATION OF SHALLOW P+N JUNCTIONS BY B-ION IMPLANTATION IN SI SUBSTRATES WITH AMORPHOUS LAYERS
H ISHIWARA, S HORITA
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 24, 5, 568-573, 1985