Dr.Eng. in Applied Electronics, Tokyo Institute of Technology(1987) 東京工業大学
1988 - : Recturer (1988), Associate Professor (1992) at Kanazawa University
1987 - : Kanazawa University , Faculty of Engineering
Electronic devices and equipment, Electric/electronic material engineering
シリコーンオイル, オゾン, 低温Si酸化膜作製, スパッタリング, TFT, thin film transistor, crystallization of Si film, 強誘電体薄膜, ferroelectric memory, Si薄膜, 薄膜作製, 薄膜結晶成長, 半導体工学, 電子デバイス, silicon oxide film, laser anneal
Fabrication of low temperature poly-crystalline Si film with controlled grain boundary location by a pulse laser beam on a glass substrate
We fabricate a low-temperature poly Si film on an amorphous or glass substrate by melting-crystallization of a deposited Si film using a pulse laser. In our research, we control, using our original method, the location of grain boundary which reduces carrier mobility in devices. Final our target is to obtain an Si film with single crystalline quality on a glass substrate and to apply it to Thin Film Transistor (TFT).
Low temperature formation of a crystallized Si film on a glass substrate by using a seed or template layer
Fabrication of a good quality crystallized Si film on a glass or plastic substrate at low temperature leads to creation of a new device. In our research, by means of the low temperature formation of a seed or template layer on the glass substrate before depositing Si film, we try to obtain a low temperature crystallized Si film on the glass substrate.
Low temperature Si oxide film formation with ozone gas and silicone oil
We found out low temperature fabrication method of Si oxidation by using 1 % ozone gas and silicone oil. By this new method, we can obtain a high growth rate of Si dioxide film, about 60 nm/60 min, at low temperature of 200C. Generally, in order to get Si oxide film at low temperature, plasma is used. However, it produces plasma-damage in the film. By our method, without plasma-damage, it is possible to get a high qulaity SiO2 film at low temperature.
Fabrication of integrated ferroelectric memory on Si substrate
Ferroelectric memory to use remanent polarization of a ferroelectric film has the feature points of high switching speed, nonvolatility, radiation tolerance and high density. So, this is expected as an ultimate memory. In our research, we deposit a PZT(Pb(Zr,Ti)O3) film on an Si substrate and fabricate an integrated memory device which operates with our original principle.
MRS (Materials Research Society), 電子情報通信学会, 日本表面学会, 応用物理学会, MRS (Materials Research Society) in U.S.A., Institute of Electronics Information and Communication Engineers in Japan, Surface Science Society of Japan, Japan Society of Applied Physics
一般会員 , 電子情報通信学会
一般会員 , 日本表面学会
一般会員 , 応用物理学会
・ 第15回APEX/JJAP編集貢献賞 , 堀田 將 , 応用物理学会 , 2017
・ 科研費審査委員賞 , 堀田 將 , 独立行政法人日本学術振興会 , 2015
・ Outstanding Poster Paper Award , The 20th International Display Workshops (IDW'13) , 2013