HORITA, Susumu Professor
Division of Transdisciplinary Sciences, School of Materials Science, Applied Physics Area
◆Degrees
Dr.Eng. in Applied Electronics, Tokyo Institute of Technology(1987) 東京工業大学
◆Professional Experience
1988 - : Recturer (1988), Associate Professor (1992) at Kanazawa University
1987 - : Kanazawa University , Faculty of Engineering
◆Specialties
Electronic devices and equipment, Electric/electronic material engineering
◆Research Keywords
シリコーンオイル, オゾン, 低温Si酸化膜作製, スパッタリング, TFT, thin film transistor, crystallization of Si film, 強誘電体薄膜, ferroelectric memory, Si薄膜, 薄膜作製, 薄膜結晶成長, 半導体工学, 電子デバイス, silicon oxide film, laser anneal
◆Research Interests
Fabrication of low temperature poly-crystalline Si film with controlled grain boundary location by a pulse laser beam on a glass substrate
We fabricate a low-temperature poly Si film on an amorphous or glass substrate by melting-crystallization of a deposited Si film using a pulse laser. In our research, we control, using our original method, the location of grain boundary which reduces carrier mobility in devices. Final our target is to obtain an Si film with single crystalline quality on a glass substrate and to apply it to Thin Film Transistor (TFT). 備考
Low temperature formation of a crystallized Si film on a glass substrate by using a seed or template layer
Fabrication of a good quality crystallized Si film on a glass or plastic substrate at low temperature leads to creation of a new device. In our research, by means of the low temperature formation of a seed or template layer on the glass substrate before depositing Si film, we try to obtain a low temperature crystallized Si film on the glass substrate. 備考
Low temperature Si oxide film formation with ozone gas and silicone oil
We found out low temperature fabrication method of Si oxidation by using 1 % ozone gas and silicone oil. By this new method, we can obtain a high growth rate of Si dioxide film, about 60 nm/60 min, at low temperature of 200C. Generally, in order to get Si oxide film at low temperature, plasma is used. However, it produces plasma-damage in the film. By our method, without plasma-damage, it is possible to get a high qulaity SiO2 film at low temperature. 備考
Fabrication of integrated ferroelectric memory on Si substrate
Ferroelectric memory to use remanent polarization of a ferroelectric film has the feature points of high switching speed, nonvolatility, radiation tolerance and high density. So, this is expected as an ultimate memory. In our research, we deposit a PZT(Pb(Zr,Ti)O3) film on an Si substrate and fabricate an integrated memory device which operates with our original principle. 備考

■Publications

◆Published Papers
Investigation on Silicon Oxide Films Grown by Using Silicone Oil and Ozone at Low-Temperature
Sanjida Ferdous, Abu Bakar, Md Ismail, Susumu Horita
International Conference on Computer, Communication, Chemical, Material and Electronic Engineering, IC4ME2 2018, -, 2018
Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials-
Hamada Hiroki, Horita Susumu, Furuta Mamoru, Kimura Mutsumi, Hattori Reiji
JAPANESE JOURNAL OF APPLIED PHYSICS, 57, 3, -, 2018
Nano Electronic Materials FOREWORD
Kuzuhara Masaaki, Ichikawa Musubu, Baba Akira, Fujisawa Hironori, Horita Susumu, Itoh Eiji, Kawae Takeshi, Kimura Mutsumi, Masuda Atsushi, Mori Tatsuo, Okada Hiroyuki, Suematsu Hisayuki, Suzuki Toshikazu, Tani Masahiko, Tsuboi Nozomu, Uchitomi Naotaka, Uraoka Yukiharu, Yamashita Ichiro
JAPANESE JOURNAL OF APPLIED PHYSICS, 57, 2, -, 2018
◆Misc
Si基板上でのエピタキシャル強誘電体薄膜の配向制御法の確立
岡本庄司, 渡辺隆之, 森岡仁, 横山信太郎, 秋山賢輔, 村中一樹, 堀田將, 舟窪浩
第64回応用物理学会学術講演会, 2a-V-8, 505-, 2003
◆Books
薄膜作製応用ハンドブック
分担執筆, エヌ・ティー・エス, 2020
薄膜ハンドブック(第2版)、4・3 誘電特性4・3・1 誘電体薄膜の性質(2)強誘電性
共著, オーム社, 2008
薄膜トランジスタ 、1章(分担)
共著, 1-9, コロナ社, 2008
◆Conference Activities & Talks
Deposition Condition for High Crystalline Fraction of Yttria-Stabilized Zirconia (YSZ) Films Deposited by Reactive Sputtering at Room Temperature
第67回応用物理学会春季学術講演会 講演、15a-PB1-1, 2020
Reduction of Hydroxyl in the Low-Temperature Si Oxide Films Fabricated under Various Deposition Conditions
第67回応用物理学会春季学術講演会 講演、14a-PA4-5, 2020
Deposition of a crystallized YSZ film on a cellulose nanopaper (CNP)
薄膜材料デバイス研究会第16回研究集会「新時代に向けた薄膜材料のデバイス技術」, 2019
Pre-sputtering Condition for Crystallized Yttria Stabilized Zirconia (YSZ) Film Deposition on Cellulose Nanopaper (CNP) by Reactive Sputtering
第80回応用物理学会秋季学術講演会、21a-C310-7, 05-302ページ, 2019
FT-IR Study on Chemical Bonds of Low-Temperature Si Oxide Films Preserved in Various Conditions
第80回応用物理学会秋季学術講演会、18p-PB2-4, 12-095ページ, 2019

■Teaching Experience

Introduction to Physics, Transdisciplinary Session I, 材料物理概論, 異分野「超」体験セッションⅠ

■Contributions to  Society

◆Academic Society Affiliations
MRS (Materials Research Society), 電子情報通信学会, 日本表面学会, 応用物理学会, MRS (Materials Research Society) in U.S.A., Institute of Electronics Information and Communication Engineers in Japan, Surface Science Society of Japan, Japan Society of Applied Physics
◆Academic Contribution
一般会員 , 電子情報通信学会
一般会員 , 日本表面学会
一般会員 , 応用物理学会

■Academic  Awards

・ 第15回APEX/JJAP編集貢献賞 , 堀田 將 , 応用物理学会 , 2017
・ 科研費審査委員賞 , 堀田 將 , 独立行政法人日本学術振興会 , 2015
・ Outstanding Poster Paper Award , The 20th International Display Workshops (IDW'13) , 2013